Preparation and characterization of Fe‐Tetranitro phthalocyanine/polyurethane blends

In this article, Fe‐Tetranitro phthalocyanine (Fe‐TNPc)/polyurethane (PU) blends were prepared by solution blending. The mechanical properties of the samples were studied by tensile tests. The results showed that the tensile strength and the elongation at break of the samples increased with increasing Fe‐TNPc content. The improved mechanical properties for the samples containing Fe‐TNPc was attributed to the increased microphase separation degree of PU, which was further investigated by dynamic mechanical analysis (DMA) and Fourier transform infrared analysis. The lower T_g of the soft segments and the higher T_g of the hard segments for the samples containing Fe‐TNPc indicated an increase of microphase separation degree of PU. The increased hydrogen bonded carbonyl groups in the samples with increasing Fe‐TNPc content also proved the conclusion. Quantitative evaluation of the interaction between Fe‐TNPc and PU was also investigated by analyzing the physical crosslinking density of the samples. The results indicated that the physical crosslinking density of the samples increased with increasing Fe‐TNPc content. The antibacterial properties of the samples were investigated. The results showed that the percentage bacterial inactivation toward S. aureus and E. coli of the samples were 98.9% and 90.9%, respectively, when Fe‐TNPc was added to 1%. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41284.     

High-Tg porous polyimide films with low dielectric constant derived from spiro-(adamantane-2,9′(2′,7′-diamino)-fluorene)

Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high-performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl-adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross-sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass-transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl-adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as-prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47313.     

浅析医药包装

随着市场经济的深入，医药包装正成为我国经济发展的朝阳产业，文中意在介绍先进的医药包装材料。分析其应用情况及发展趋势和动态。     

Inhibition of microbial growth in ready‐to‐eat food stored at ambient temperature by modified atmosphere packaging

This study was undertaken to develop a modified atmosphere package to control microbial growth in ready‐to‐eat (RTE) products stored at ambient temperature. Ethanol and/or limonene associated with modified atmosphere (CO₂ : O₂ : N₂ = 30% : 5% : 65%) was used to inhibit the growth of total air‐borne microorganisms and Escherichia coli in RTE products stored at 25°C. The results indicated that 0.05% ethanol vapour in the headspace was effective to inhibit the growth of air‐borne microorganisms and E. coli at 25°C for 72 h in a model study, and the effectiveness was related to ethanol content. Both 73 ppm limonene and 0.05% ethanol vapour enhanced the bacteriostatic effect of modified atmosphere in RTE sushi roll products, and no off‐flavour was detected using this formulated gas; however, no significant inhibitory effect was observed for RTE cold noodle products. This study concludes that combinations of carbon dioxide, ethanol or limonene vapours are effective to inhibit microbial growth in RTE food at ambient temperature, and the outcome may be due to the hurdle effect. Copyright © 2003 John Wiley & Sons, Ltd.     

Silicon for thin-film transistors

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.     

新型高K栅介质ZrO2薄膜材料的制备及表征

采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm.     

柔性联轴节在减小转子系统扭转冲击运动中的作用

通过对大型振动磨机运动特性的研究分析,把其旋转系统简化为由两个柔性联轴节连接的三转子系统。建立了柔性连接的三转子系统在冲击转矩作用下的运动方程,对方程求解得到了柔性连接转子系统的扭转冲击响应。通过对冲击响应随柔性联轴节扭转刚度和阻尼变化规律的讨论分析,发现减小柔性联轴节的扭转刚度和增大柔性联轴节的阻尼,可以减小转子系统的扭转冲击响应。     

Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.     

PECVD法低温沉积多晶硅薄膜的研究

在玻璃衬底上采用常规的PKCVD法在低温(≤400℃)条件下制得大颗较(直径＞100nm)、择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiF4和H2混合气体。加入少量的SiH4后，沉积速率提高了近10倍。分析认为，在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m n≤3)，而不可能是SiHn(n≤3)基团。