Surface nitridation of titanium metal by means of a gas tunnel type plasma jet

The surface nitridation of titanium was carried out at a low pressure in nitrogen atmosphere using a gas tunnel type plasma jet. The titanium nitride (TiN) film, 10 μm thick and 2000 HV, could be formed in 10 s. The structure of the TiN film was investigated by XRD. The Vickers hardness on the surface of the film was measured. The effects of deposition conditions on the properties of TiN films (TiN thickness,Vickers hardness, etc.) were investigated, and the advantage of this deposition method was identified from those results.     

Influences of deposition parameters on the microstructure and properties of nanostructural TiN films synthesized by filtered cathodic arc plasma

Titanium nitride （TIN） films with nanostructure were prepared at ambient temperature on a （111） silicon substrate by the filtered cathodic arc plasma （FCAP） technology with an in-plane ＂S＂ filter. The effects of deposition parameters on the grain size, texture and nano-hardness of the films were systematically investigated. The grain size was obtained through calculation using the Scherrer formula and observed by TEM. The results of X-ray diffraction and electron diffraction indicated that increasing either negative substrate bias or argon flow promoted the formation of （111） preferred orientation. High argon flow leads to biaxial texture. The micro-hardness of the TIN films as a function of grain size showed a behavior according to the Hall-Petch relation under high argon flow.     

活性元素Ti在CBN与钎料结合界面的特征

通过扫描电镜、能谱仪、X射线衍射仪研究了Ag-Cu-Ti钎料中的活性元素Ti在钎料与立方氮化硼（CBN）磨粒高温钎焊结合界面的扩散现象，并运用动力学分析对界面反应层的生长过程及反应激活能进行了探讨。结果表明：钎焊过程中，钎料中的活性元素Ti明显向磨粒侧扩散偏聚并发生化学反应，实现了磨粒与基体材料的牢固结合；钎焊CBN磨粒表面生成的TiB2和TiN化合物形貌接近平衡状态下生长的理想形貌；界面反应层在钎焊温度1153K～1193K，保温时间5min～20min之间依据抛物线生长法则所得扩散激活能值表明其生长过程主要受新生TiN影响。     

反应溅射制备AlN薄膜中沉积速率的研究

通过对浅射过程中辉光放电现象及薄膜沉积速率的研究，发现随着氮浓度的增大，靶面上形成一层不稳定的AlN层，由于AlN的溅射速率远小于Al，从而使薄膜的沉积速率显著下降。同时还研究了其它溅射参数对薄膜沉积速率的影响。结果表明：随靶基距的增大靶功率的减小，不同程度引起沉积速率的下降；随着溅射气压的增大，最初沉积速率不断增大，当溅射气压增大到一定程度时，沉积速率达到最大值，之后随溅射气 压的增大，又不断减小。     

添加剂对Al2O3／BN可加工陶瓷性能的影响

采用Si3N4和SiC作为Al2O3／BN可加工陶瓷的添加剂，考察了添加剂种类和含量对材料力学性能及可加工性能的影响。研究表明，2种添加剂均对调节体系中由于热膨胀失配所引起的人的内应力起到积极的作用。材料的抗弯曲强度随添加剂含量的增加而提高，同时可加工性能略有降低。尤其是Si3N4的加入使体系在热压烧结过程中原位反应生成液相x-Sialon，显著降低了烧结温度，促进材料的致密化。     

氮化硅陶瓷刀具表面涂覆高硬耐磨氮化钛涂层研究

用高能量密度脉冲等离子体于室温下在氮化硅陶瓷刀具上成功沉积了高硬耐磨的氮化钛涂层。薄膜厚度用光学显微镜和俄歇电子能谱仪测定，薄膜元素和相组成与分布分别用俄歇电子能谱仪、X光电子能谱以及X光衍射仪测定，薄膜微观结构用扫描电镜观察，薄膜表面粗糙度用光学显微镜测定，薄膜力学性能由纳米压痕实验和纳米划痕实验确定，薄膜的磨损性能用上业条件下的切削实验评价。实验结果表明，在最优化条件下，涂层与基体的结合力很好，纳米划痕实验临界载荷达80mN以上；氮化钛涂层具有很高的硬度和杨氏模量，分别达28GPa和350GPa以上。涂层刀具用于HB达2200MPa—2300MPa的HT250钢切削实验表明，刀具耐磨损能力增强，寿命明显提高。     

An Investigation of Grinding with Electroplated CBN Wheels

Grinding of hardened bearing steel with electroplated CBN wheels was Investigated with particular attention to how the wear of the abrasive grains affects the wheel topography and grinding performance during the wheel ire. Power, surface roughness, and wheel topography data were obtained throughout the wheel life for internal cylindrical grinding. Dulling of CBN gratis by attrition was found to cause an increase in the grinding power, but the degree of dulling was restricted mainly by grain fracture and also by grain pullout. Grain fracture and pullout had a much smaller effect on the progressive increase in active grain density, which caused the surface roughness to progressively decrease. Wheel failure tended to occur by stripping of the abrasive layer when the radial wear reached about 70% - 60% of the grain dimension     

Optical third-harmonic investigations of gallium nitride nucleation layers on sapphire

The magnitude of the χ _xxxx ⁽³⁾ element of the third-order optical susceptibility was measured in a series of wurtzite phase GaN nucleation layers (～450Å) deposited on (00.1) sapphire at 540°C and annealed to various temperatures up to 1050°C. The nonlinear optical response exhibited a significant increase in films that were annealed to temperatures in the range of 1015 to 1050°C. In addition, the correlation between the magnitude of χ _xxxx ⁽³⁾ with both the maximum value of the linear absorbance gradient and the residual homogeneous strain in the overlayer suggests that variations in the crystalline content of the film and the bonding distance between the Ga and N atoms are primary factors in determining the third-order nonlinearity in GaN.     

Surface Growth of Boron Nitride Nanotubes through Boron Source Design

Boron nitride nanotubes (BNNTs) are promising materials due to their unique physical and chemical properties. Fabrication technologies based on gas-phase reactions reduce the control and collection efficiency of BNNTs due to reactant and product dispersion within the reaction vessel. A surface growth method that allows for controllable growth of BNNTs in certain regions using a preburied boron source is introduced. This work leverages the high solubility of boron in metals to create a boronized layer on the surface which serves as the boron source to confine the growth of BNNTs. Dense and uniform BNNTs are obtained after loading catalysts onto the boronized substrate and annealing under ammonia. Confirmatory experiments demonstrate that the boride layer provides boron for BNNTs growth. Furthermore, the patterned growth of BNNTs is realized by patterning the boronizing region, demonstrating the controllability of this method. In addition, the Ni substrate with BNNTs growth exhibits better performance in corrosion resistance and thermal conductivity than pure Ni. This study introduces an alternative strategy for the surface growth of BNNTs based on boron source design, which offers new possibilities for the controllable preparation of BNNTs for various applications.     

Breaking the Responsivity-Bandwidth Trade-Off Limit in GaN Photoelectrodes for High-Response and Fast-Speed Optical Communication Application

Underwater optical communication (UOC) has attracted considerable interest in the continuous expansion of human activities in marine/ocean environments. The water-durable and self-powered photoelectrodes that act as a battery-free light receiver in UOC are particularly crucial, as they may directly face complex underwater conditions. Emerging photoelectrochemical (PEC)-type photodetectors are appealing owing to their intrinsic aqueous operation characteristics with versatile tunability of photoresponses. Herein, a self-powered PEC photodetector employing n-type gallium nitride (GaN) nanowires as a photoelectrode, which is decorated with an iridium oxide (IrO_x) layer to optimize charge transfer dynamics at the GaN/electrolyte interface, is reported. Strikingly, the constructed n-GaN/IrO_x photoelectrode breaks the responsivity-bandwidth trade-off limit by simultaneously improving the response speed and responsivity, delivering an ultrafast response speed with response/recovery times of only 2 µs/4 µs while achieving a high responsivity of 110.1 mA W⁻¹. Importantly, the device exhibits a large bandwidth with 3 dB cutoff frequency exceeding 100 kHz in UOC tests, which is one of the highest values among self-powered photodetectors employed in optical communication system.