γ-射线辐照对芳纶纤维复合材料力学性能的影响

本文研究了γ-射线辐照处理对三维编织芳纶纤维增强铸型尼龙(简称K3D／MCPA)复合材料力学性能的影响。研究表明，经γ线处理的芳纶纤维，表面氧含量有所提高，纤维表面活性增大；纤维经表面处理后的弯曲强度、弯曲模量及剪切强度均比未处理的高，但冲击强度较低。     

Activation of Ni/A12O3 catalysts through modification of the Al2O3 support

The effect of alumina pretreatment on the performance of alumina supported nickel catalysts was demonstrated in gas phase hydrogenation of toluene to methylcyclohexane. The state of the alumina was changed from pure to pure phase through various heat treatments in air. The catalysts were prepared from vapor phase by saturating the accessible binding sites on the pretreated alumina with the nickel precursor. The highest number of active sites for hydrogenation was observed for catalysts prepared on alumina having an incomplete phase transition and a / alumina phase ratio between 0.5 and 10. Results from temperature programmed desorption (TPD) studies revealed that a maximum in weakly chemisorbed hydrogen as well as in total amount of desorbed hydrogen was found for the same catalysts. By hydrogen chemisorption studies the total hydrogen uptake was found to correlate with the observed hydrogenation maximum. It is suggested that both the chemical and physical properties of the alumina influence the activity. An optimal metal-support interaction and structural defects on the alumina due to the phase transition can explain the observed maximum in the number of active sites and in hydrogen uptake.     

An EXAFS study of the Mo/TiO2 hydrodesulphurization catalysis

In-situ EXAFS studies of sulphided Mo/TiO₂ catalysts have shown that at low Mo loadings (2–4 wt%), an active species with a short Mo-S distance of 2.25 Å is formed, while on Mo/TiO₂ with high Mo loadings as well as on Mo/-Al₂O₃, bulk MoS₂ (Mo-S, 2.42 Å) is formed. The species with the short Mo-S distance has Mo in an oxidation state close to 6 + and is likely to result from the sulphidation of the tetrahedral molybdate species present in the oxidic precursor at low Mo loadings. The calcination temperature of the oxidic precursor appears crucial, a high calcination temperature of 973 K favouring the formation of MoS₃ on sulphidation, and a low calcination temperature of 623 K favouring MoS₂.Contribution No. 790 from the Solid State and Structural Chemistry Unit.     

Impact of graphene oxide nanoparticles and carbon black on the gamma radiation sensitization of acrylonitrile–butadiene rubber seal materials

Seals prepared from acrylonitrile–butadiene rubber (NBR) are primarily used in nuclear services. Nevertheless, at relatively high ionizing radiation doses, NBR seal materials may undergo radiation-induced degradation processes, leading to adverse effects on the sealing ability life. Herein, to strengthen the functional characteristics of NBR seals against radiation, graphene oxide (GO) nanoparticles were prepared and characterized by transmission electron microscopy, X-ray diffraction (XRD), Fourier transform infrared (FTIR), and ultraviolet/visible spectroscopies. Various NBR/GO composites fabricated with different ratios of GO nanoparticles and in the presence or absence of carbon black (CB) were investigated via cross-linking density, scanning electron microscopy, XRD, FTIR, and mechanical and thermal stability analyses. The synergistic effect of the simultaneous presence of GO and CB on the NBR seal sensitization to gamma radiation up to a dose of 1 MGy was studied. The physicomechanical properties were enhanced by adding GO nanosheets up to 3 phr and by incorporating 35 phr of a CB with GO until 5 phr. Further, the application of γ-irradiation resulted in an overall enhancement in the mechanical, physical, and thermal stability of the prepared composites up to 0.5 and 1 MGy with GO nanosheets in the absence or presence of CB particles, respectively. The mechanical measurements indicated significant increments by loading with GO nanosheets in the absence and presence of CB as well as by irradiation. The tensile strength elevated up to about 121%, 336%, and 366% by adding 3 phr GO, 3 GO:35 CB phr, and 5 GO:35 CB phr, respectively.     

Analytical study of surface and bulk oxidation of Astroloy

Nickel-base alloys, such as Astroloy, used for aeronautical turbine disks, are sensitive to time-dependent cracking in environments containing oxygen. The mosaic structure of the alloy consisting islands (200 nm average size) surrounded by the -phase (100 nm thick) induces complex oxidation phenomena. Various analytical approaches allow the delineation of all the steps from segregation to oxidation occurring on the surface of such a duplex structure. The protection of Astroloy by its outer oxide layer against oxygen penetration was studied also, using alternative ¹⁶O₂ then ¹⁸O₂ oxidation. In association with STEM studies, it is shown that the outer oxide scale is not a real barrier against oxygen penetration and that inner precipitation of chronium (+ aluminium and titanium)-enriched oxides, takes place especially in the structure.     

B和C对铸造TiAl基合金宏观和显微组织的影响

对比研究了B和C含量的变化对铸造TiAl基合金宏观和显微组织的影响。结果表明 ，B或C含量的增加均能细化TiAl基合金的晶粒，但二者的作用特点不同。B含量对宏观组织和晶粒尺寸的影响是渐进的，而C对其影响存在一个临界含量。显微观察表明，微量的B就能使合金析出TiB2，随着合金中B含量的增加，硼化物颗粒呈不同的形貌。对于含C合金，当C含量低于临界含量时，在光学尺度上观察不到碳化物相，而当C含量高于临界含量时，合金中生成大量的Ti2AlC碳化物颗粒。讨论了B和C细化TiAl基合金的机制。     

Difference in electron- and gamma-irradiation effects on output characteristic of color CMOS digital image sensors

Changes of the average brightness and non-uniformity of dark output images, and quality of pictures captured under natural lighting for the color CMOS digital image sensors irradiated at different electron doses have been studied in comparison to those from the γ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviously and a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightness increases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy, showing the sensor undergoes severe performance degradation. Electron radiation damage is much more severe than γ radiation damage for the CMOS image sensors. A possible explanation is presented in this paper,     

一种实拍图像的高光去除方法

根据双色反射模型,通过分离出漫反射分量的方法,获得了对图像中的高光去除的结果。同时,针对双色反射模型要求的相机响应函数必须满足线性关系,但实际拍摄图像为非线性关系的问题,提出了基于参数自适应确定的伽马变换漫反射分离方法。实验结果表明,该方法可对实际拍摄的图像完成有效的高光去除。     

An introduction to the Information Display Measurement Standard 1, the first display measurement standard from the International Committee for Display Metrology

On June 1, 2012, the Information Display Measurement Standard version 1 was released. This is the first standard from the worldwide standard group, the International Committee for Display Metrology, a standards committee within SID, and it culminates several years worth of development from many contributors at various levels. It has 26 top‐level chapters and a total over 450 sections of all parts, including over 200 measurement sections and 8 appendices that cover 133 topics of display metrology, tutorials, technical discussions, and references. Herein is an overview of the Information Display Measurement Standard version 1, including the structure of the document, tips, tricks, and hidden features, how it is maintained, support material, a breakdown of its contents, and finally, a sampling of four of the over 200 measurements. The standard is available as a free download and can be found on the International Committee for Display Metrology home page — http://www.icdm‐sid.org .     

Digital‐to‐analog converter with gamma correction on glass substrate for TFT‐panel applications

Abstract— Low‐temperature polysilicon (LTPS) technology has a tendency towards integrating all circuits on glass substrate. However, the poly‐Si TFTs suffered poor uniformity with large variations in the device characteristics due to a narrow laser process window for producing large‐grained poly‐Si TFTs. The device variation is a serious problem for circuit realization on the LCD panel, so how to design reliable on‐panel circuits is a challenge for system‐on‐panel (SOP) applications. In this work, a 6‐bit R‐string digital‐to‐analog converter (DAC) with gamma correction on glass substrate for TFT‐panel applications is proposed. The proposed circuit, which is composed of a folded R‐string circuit, a segmented digital decoder, and reordering of the decoding circuit, has been designed and fabricated in a 3‐μm LTPS technology. The area of the new proposed DAC circuit is effectively reduced to about one‐sixth compared to that of the conventional circuit for the same LTPS process.