Degradation state analysis of the IGBT module based on apparent junction temperature

The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. The application of IGBT online degradation state analysis technology can be benefcial to the improvement of system reliability. The failure mechanism of IGBT devices is discussed in this paper, and a technique for analyzing the degradation state of IGBT based on apparent junction temperature is proposed. First, the distortion consistency of the voltage rise time in various failures is discussed, and the junction temperature dependence of the voltage rise time is then demonstrated. Subsequently, an apparent junction temperature model based on the voltage rise time is established (the ftting accuracy is as high as 94.3%). From the high-frequency model in the switching process of the device, an online extraction technology of key parameters (e.g., voltage rise time) is developed. Finally, an experimental platform for IGBT degradation state estimation is established, and the feasibility of IGBT degradation state estimation based on apparent junction temperature is proved, especially the degradation of bonding-wire and the gate-oxide-layer. The experimental results show that the proposed IGBT degradation state estimation technique based on apparent junction temperature is a reliable online estimation method with non-contact, high accuracy, and comprehensiveness.     

Degradation state analysis of the IGBT module based on apparent junction temperature

The multi-chip parallel insulated gate bipolar transistor (IGBT) is the core device in large-capacity power electronic equipment, but its operational reliability is of considerable concern to industry. The application of IGBT online degradation state analysis technology can be benefcial to the improvement of system reliability. The failure mechanism of IGBT devices is discussed in this paper, and a technique for analyzing the degradation state of IGBT based on apparent junction temperature is proposed. First, the distortion consistency of the voltage rise time in various failures is discussed, and the junction temperature dependence of the voltage rise time is then demonstrated. Subsequently, an apparent junction temperature model based on the voltage rise time is established (the ftting accuracy is as high as 94.3%). From the high-frequency model in the switching process of the device, an online extraction technology of key parameters (e.g., voltage rise time) is developed. Finally, an experimental platform for IGBT degradation state estimation is established, and the feasibility of IGBT degradation state estimation based on apparent junction temperature is proved, especially the degradation of bonding-wire and the gate-oxide-layer. The experimental results show that the proposed IGBT degradation state estimation technique based on apparent junction temperature is a reliable online estimation method with non-contact, high accuracy, and comprehensiveness.     

圆柱壳弹性波超材料分级排列的带隙拓宽方法研究

圆柱壳弹性波超材料的弯曲波带隙拓宽问题限制其满足实际工程中的宽频隔振要求,针对该问题,本文首先研究了基于局域共振机理的圆柱壳弹性波超材料弯曲波带隙特点,研究局域谐振器质量和弹簧劲度系数的关系,然后将周期分级排列的组合方式应用于圆柱壳类弹性波超材料的带隙拓宽中,并利用有限元法进行能带结构和振动传输特性计算.研究结果显示：该方法可实现弯曲波带隙的拓宽;利用组合法构建的轴向周期分级排列圆柱壳弹性波超材料可实现705-1226Hz频率范围内弯曲波的高效衰减,带隙拓宽至分别为单一谐振器的2.55倍,这表明该方法在宽频减振方面具有明显优势,应用前景广阔.     

基于永磁形状的BLDC永磁电机转矩分析与优化

无刷直流永磁电机因节能高效、便于使用等优势而受到广泛关注。然而,该类电机通常因空载感应电动势波形不理想而具有转矩脉动较大等问题。以24槽4极无刷直流永磁电机为例,基于气隙磁场调制理论分析了转子永磁型无刷直流电机的空载感应电动势等电磁特性,以磁场调制原理中的永磁初始磁动势源为切入点,探讨影响电机空载感应电动势波形系数的因素并揭示感应电动势形成的内在机理。首先,针对24槽4极传统转子永磁无刷直流电机的运行原理和空载气隙磁场进行分析,并根据得出的结论采取永磁体谐波削极的方式优化电机空载感应电动势波形系数,最后通过仿真验证了理论分析和优化方案的合理性。     

控制策略对机载雷达永磁电机峰值转矩影响分析

针对机载雷达用永磁电机对功率密度的苛刻要求与短时高过载和长时低负载转矩的工况特点,在分析表贴式永磁电机和内嵌式一字形、V字形永磁电机的气隙磁密特点基础上,对比研究了直轴电流为零控制策略和最大转矩电流比控制策略对电机输出峰值转矩的影响。研究结果表明,采用直轴电流为零控制策略,表贴式永磁电机具有更大的峰值转矩;采用最大转矩电流比控制策略,内嵌式V字形永磁电机具有更大的峰值转矩;三种类型电机,相同机载雷达应用工况下,内嵌式V字形永磁电机温升最低。     

基于计算机图形和多孔介质的树冠孔隙率反演

树冠孔隙率(GF)决定了光和气流穿过树冠与植被元素相互作用进行光合作用和蒸腾的传输情况,在多孔介质理论启发下,受计算机图形学的启发,将树冠中的植被元素定量为固体矩阵,将树冠中的缝隙作为孔隙来指导GF计算。通过从地面激光扫描数据中提取单个叶片,并采用拟合算法去除噪声和描绘叶片边缘,创新地定义了叶片卷曲和下垂程度的等效厚度,并从拟合点中计算出来。然后,用自适应尺寸分配的六边形棱镜包住每片叶子的扫描点,用圆柱体模型拟合每个枝干,以计算树冠的等效叶子和枝干体积。结果显示,分割的叶片数为紫薇(1193片)、樱花(2540片)以及含笑(379片),估计的GF分别为：紫薇0.990,樱花树0.976,含笑0.978。     

基于间隙度量的多模型过热汽温预测控制

针对火电机组主汽温被控对象所具有的大惯性、大迟延以及其随机组负荷变化而发生的参数时变性,为解决传统串级控制方案在机组深度调峰情况下控制品质恶化的问题,提出了一种基于间隙度量的多模型过热汽温预测控制策略。引入间隙度量理论来确定各模型输出的权值。首先选取若干个典型工况设计局部预测控制器;再运用间隙度量理论,计算各个局部预测控制器的输出权值,进而加权求出控制器的输出值。仿真研究表明,该方法可以很好地应对机组负荷变化时被控对象参数变化的问题;与使用常规的串级控制以及单模型预测控制方案相比,主汽温的动态和稳态性能得到了改善。     

基于晶闸管的直流可控避雷器关键技术

电网换相换流器(LCC)与模块化多电平换流器(MMC)级联系统具备诸多独特优势,但其低压端模块化多电平换流器(MMC)由多个电压源换流器(VSC)换流器并联组成,当发生交流侧故障时会引起低压端直流母线过电压。为抑制MMC过电压问题,提出在直流母线侧安装直流可控避雷器。对交流侧故障时MMC过电压机理进行了理论分析,提出了直流可控避雷器拓扑结构。在深入分析直流可控避雷器不同运行方式的基础上,给出了直流可控避雷器的直流混合可控开关所需的极限电流耐受能力。为实现开关触发的快速性,提出在直流混合可控开关中采用串联晶闸管阀组方案。通过晶闸管Cauer计算模型仿真研究了极限电流下晶闸管阀组瞬态结温,验证了设计方案的合理性。基于某规划直流工程进行直流可控避雷器设计,并给出了主设备布置方案。基于PSCAD/EMTDC平台搭建了系统的仿真模型,验证了所提出的直流可控避雷器拓扑抑制系统MMC过电压的有效性。     

MoS2势垒层磁性隧道结的温度-偏压特性研究

MoS₂是一种具有特殊能带结构的二维半导体材料,当层数较少时,其带隙会随层数显著减小。因此,基于MoS₂势垒层的磁性隧道结会展现出更丰富的物理特性。文章通过理论计算分别得到了单层、双层、三层以及五层MoS₂势垒层磁性隧道结的温度-偏压相图,研究了铁磁电极半交换劈裂能对相图特性的影响。计算结果表明：单层和三层MoS₂势垒层磁性隧道结适合应用于低温器件中。其中,单层MoS₂势垒层磁性隧道结在高功率工作环境下具有优异的性能。双层MoS₂势垒层磁性隧道结的优化区域位于室温和低偏压区,因此适用于信息存储领域。五层MoS₂势垒层磁性隧道结可通过调节铁磁电极参数使其工作在较宽的功率范围内。上述研究结果为MoS₂势垒层磁性隧道结的应用奠定了坚实的理论基础。     

Optical and electronic properties of some semiconductors from energy gaps

II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.