Importance of the choice of the profile model for ap-n junction in the location of deep levels

The energy levels introduced by Pt in silicon have been measured in a non-abruptp ⁺-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance. Two levels have been detected with activation energies of:E _c -E _T = 0.22 eV with acceptor character andE _T -E _v = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor levelE _c -E _T = 0.34 eV was found instead of or besides a donorlike levelE _T -E _v = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation of the electrical behavior leads to the non-existence of the acceptor levelE _c −E _T = 0.34 eV located in then-side of the junction.     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

Phase equilibria in InAsSbP quaternary alloys grown by liquid phase epitaxy

The quaternary alloy InAs_1−x−ySb_xP_y, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of gases in the 2–4 μm region of the spectrum. In this work, thermodynamic phase equilibrium calculations have been carried out to determine the compositions required for liquid phase epitaxial growth and the extent of the miscibility gap in the solid material. For high band gap materials, the desired growth temperature is found to be intermediate between a low temperature required to grow P-rich solids and higher temperatures required to avoidspinodal decomposition. Conventional LPE growth at an intermediate temperature of 583°C is found to produce good material with high luminescence efficiency and excellent optical characteristics. Problems with phosphorus loss from the melt are also discussed and lower growth temperatures are found to considerably reduce this problem. Growth in the metastable region between the binodal and spinodal lines has been achieved with the production of phosphorus-rich solids with concentrations up to y = 0.445.     

Boundary trend of α1/(α1 +α2) phase region at lower Cu side in Al-Zn-Cu system

The range of miscibility gap above 300 ℃ at low Cu side in Al-Cu-Zn ternary system was obtained by EPMA of the designed alloys and diffusion-couples treated for equilibrium. The results about the boundary trend of the α1 / (α1 α2 ) phase region was obtained. The α1 / (α1 α2 ) boundary moves towards the lower Zn side with the increase of Cu content. The results are opposite to traditional phase diagrams obtained by experiments, but consistent with recent thermodynamic calculations.     

企业网络隔离方案探讨

分析威胁网络安全的主要因素及网络隔离对网络风险的防范作用。根据几种网络隔离技术的特点和企业网的应用需求，提出企业网中3个典型网络边界上的网络隔离方案，展望网闸隔离技术在企业网中的应用前景。     

Ultrasonic measurement of the inter-electrode gap in electrochemical machining

During the process of electrochemical machining the dependency of the inter-electrode gap with time and process parameters can be used to determine process characteristics and to define the shape of the workpiece surface relative to the tool surface. Defining process variables to map out the required gap-time function requires the use of time-consuming iterative trials. In-line monitoring of the gap would enable process control and tool to workpiece transfer characteristics to be achieved (for ideal conditions) without the requirement to generate such parameter maps. This work explores the use of ultrasound applied as a passive, non-intrusive, in-line gap measurement system for ECM. The accuracy of this technique was confirmed through correspondence between the generated gap-time and current time data and theoretical models applicable to ideal conditions. Gap measurements are also used to demonstrate and quantify the degree of departure from ideal behaviour for an In718/chloride system as the electrolyte flow rate is reduced from 16 to 4 l min⁻¹. The monitoring of the gap size has also been shown to be effective when determining shape convergence under ideal conditions, for the example case of a 2D sinusoidal profile.     

二维介质PBG结构的工程设计

针对介质材料中按二维菱形周期排列空气圆孔的PBG结构，采用平面波展开法结合迭代技术的理论分析程序，对结构尺寸与介质参数的不同组合进行了批量计算，根据对计算结果的分析，归纳出阻带范围与结构参数之间的函数关系，经数据拟合得出一组准确而快捷的工程设计公式，还给出了根据预期的阻带范围设计PBG结构参数的简明步骤，实例验证了该组公式的实用性。     

用各向异性介质构造的一维光子晶体的特性分析

本文根据单轴晶体的传输矩阵，研究了一种由各向异性介质周期排列构成的一维光子晶体，分析了在不同入射角度和折射率条件下，该周期结构的反射和偏振的光学特性。分析结果表明，各向异性介质在折射率比值较大或与高折射率同性介绍结合使用，可获得较宽的禁带，并可实现在可见光范围内的全偏振全角度反射。     

InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.     

Estimation of true dihedral angles and relative grain boundary energies in polycrystals using the disector

Relative grain boundary energies can be simply related to true dihedral angles, which are the angles between grain boundary planes meeting at triple edges in polycrystals. Some limited efforts in the measurement of true dihedral angles have used the technique of serial sectioning, which is usually cumbersome and time consuming. In this study the three‐dimensional probe called the ‘disector’ has been employed to evaluate true dihedral angles. This probe, combined with automated image processing, introduces precision as well as efficiency, overcomes the disadvantages of the two‐dimensional probe and is far less tedious and less complicated than serial sectioning. It is shown that the technique is relatively simple and therefore can be applied to obtain a significantly large and accurate statistical sample of true dihedral angles. The application of this method is demonstrated by evaluating the triple junction geometry and the associated relative grain boundary energies in polycrystalline 316L austenitic stainless steel.