非反应性共聚物增容剂的作用

简述了共聚物增容剂在聚合物熔融共混物中的作用方面的研究进展。阐述了A-B、A-C和D-E型非反应性共聚物增容剂。重点介绍了增容剂的分子量、用量对聚合物共混物的界面张力、相畴尺寸和聚结的影响。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

造纸机集散控制系统

本文介绍了造纸机集散控制系统．讨论了其硬件的组成和软件结构．研究了ＤＤＳ过程级控制器的功能及对造纸机各分部速度的优化控制．系统投人运行后，取得较好的经济效益．     

Extraction of halide quaternary salts in an organic solvent/water system: Hydrodynamics and mass transfer

The hydrodynamic characteristics and mass transfers of halide quaternary salts between two immiscible phases in a stirred membrane permeation cell were investigated. The concentration of quaternary salt, temperature, solvent and the four kinds of halide quaternary salts were evaluated to achieve the extractive optimum condition. The diffusivity, overall mass‐transfer coefficients and individual mass‐transfer coefficients were determined and correlated in terms of the conventional Sh‐Re‐Sc relationship. The transfer time of quaternary salts across the membrane and the thickness of the hydrodynamic diffusion boundary layer were determined as well, so as to characterize the extractive phenomenon of quaternary salts between the two phases that is useful in phase‐transfer catalysis.     

凝析气井井筒动态预测方法

利用垂直管流公式,结合流体相平衡热力学闪蒸计算,运用状态方程模拟,给出凝析气井井筒动态预测新方法.根据该方法.结合油藏数值模拟计算的结果,可准确地预测不同生产时期凝析气井的井筒动态.     

轴端沟槽底部激光强化工艺参数优化研究

分析了选用不同激光能量密度对HT300进行表面强化处理时，材料表面呈现的四种状况；未相变硬化、相变硬化、表面微熔与表面熔凝的金相组织。根据工艺要求，选取相变硬化方法对轴端沟槽底表面进行处理。分析了工件激光处理方法并通过试验研究，寻找轴端沟槽底部激光强化工艺参数；激光功率（P）、光斑直径（D）及扫描速度（V）的优化组合。硬度测试及耐磨性能试验表明：激光相变处理和激光熔凝处理后轴端沟槽底部表面较表面感应淬火硬度分别提高7%和34%，绝对磨损体积分别下降了13%和25%。实践证实，对轴端沟槽底部激光相变硬化处理方法较其他表面处理方法工艺简单，加工工件符合技术要求，试验结果对零件表面处理提供了可靠依据。     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

Selective partial oxidation of light paraffins with hydrogen peroxide on thin-layer supported Nafion-H catalysts

Thin-layer carbon supported Nafion-H catalysts were found to be active and highly selective (S>98%) for the partial oxidation of C₁-C₃ alkanes, in a three phase catalytic membrane reactor (3PCMR), under mild conditions and in the presence of H₂O₂. The influences of the catalyst teflon loading and H₂O₂ concentration on the reaction rate have been evaluated. A reaction pathway, based on the electrophilic hydroxylation of the C-H bond of alkanes with protonated hydrogen peroxide (H₃O ₂ ⁺ ), is discussed.