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71.
Frank H. P. Fitzek Martin Reisslein 《International Journal of Communication Systems》2004,17(5):421-435
Video streaming is expected to account for a large portion of the traffic in future networks, including wireless networks. It is widely accepted that the user datagram protocol (UDP) is the preferred transport protocol for video streaming and that the transmission control protocol (TCP) is unsuitable for streaming. The widespread use of UDP, however, has a number of drawbacks, such as unfairness and possible congestion collapse, which are avoided by TCP. In this paper we investigate the use of TCP as the transport layer protocol for streaming video in a multi‐code CDMA cellular wireless system. Our approach is to stabilize the TCP throughput over the wireless links by employing a recently developed simultaneous MAC packet transmission (SMPT) approach at the link layer. We study the capacity, i.e. the number of customers per cell, and the quality of service for streaming video in the uplink direction. Our extensive simulations indicate that streaming over TCP in conjunction with SMPT gives good performance for video encoded in a closed loop, i.e. with rate control. We have also found that TCP is unsuitable (even in conjunction with SMPT) for streaming the more variable open‐loop encoded video. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
72.
Dvoryankin V. F. Dikaev Yu. M. Kudryashov A. A. Sokolovskii A. A. 《Measurement Techniques》2003,46(8):806-809
A method is described for determining the instantaneous effective energy of x-ray tube brehmsstrahlung by means of two semiconductor detectors employing epitaxial GaAs structures and a measurement circuit, which together determine the effective energy with an error of 5% in the range 20–80 keV in the presence of nonlinearity in the detector response. 相似文献
73.
F. M. Xu S. J. Zhu J. Zhao M. Qi F. G. Wang S. X. Li Z. G. Wang 《Materials Science and Engineering: A》2003,360(1-2):191-196
The SiC/Al graded composite was fabricated by powder metallurgy processing and its fatigue crack growth behavior was studied. The volume percentage of SiC particulates was distributed from 5 to 30% layer by layer on the cross section. Since the aluminium was dissolved together, there was no evident interface between the two layers with different volume fraction of SiC particulates. Fatigue crack growth was in direction of from 5 to 30% SiC layers under sinusoidal wave-form. The retardation of fatigue crack growth was found when crack propagated from low volume fraction of SiC to high volume fraction of SiC. The crack deflection and branching between two layers were observed, which decreased crack growth rates. In view of crack tip driving force, the plasticity mismatch between the layers shielded crack tip driving force, i.e. decreased the effective J-integral at the tip of the crack as the plastic zone of the crack tip spread from the weaker material into the stronger material. 相似文献
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叙述了二代近贴聚焦像增强器批量生产所用真空设备性能及特点,同时给出了管子工艺考核结果及管子纳秒时间响应特性。工艺考核结果表明,制管工艺可靠、性能稳定,管子批量生产合格率大于70%。 相似文献
77.
电子产品研制阶段可靠性增长试验研究 总被引:1,自引:0,他引:1
结合工程实际经验,深入讨论了可靠性增长过程及实现途径,在保持试验条件和改进过程不变的条件下,实施了对具体型号电子产品的可靠性增长试验,达到了预期的可靠性增长目标,并且利用可靠性增长试验的数学模型(AMSAA模型)来评估产品的可靠性增长,对开展可靠性增长与可靠性增长试验工作具有重要的实际意义. 相似文献
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Woo‐Seok Cheong 《ETRI Journal》2003,25(6):503-509
Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating. 相似文献