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41.
The growth mode transition processes of GaAs heteroepitaxial growth on an InP substrate were investigated using a scanning
tunneling microscopy (STM) multi-chamber system equipped with a molecular beam epitaxy facility. During the initial stage,
the growth mode transition from two-dimensional (2D)-to three-dimensional (3D)-island growth occurred with more than 2.0 ML
of GaAs deposition onto the InP surface. This 3D-island structure gradually became flat upon increasing the amount of GaAs
deposition, and finally recovered to a GaAs 2D structure. Furthermore, an extended dislocation line can be observed in the
STM image of the recovered GaAs surface. 相似文献
42.
J.E. Ayers 《Journal of Electronic Materials》2008,37(10):1511-1523
This review paper presents important findings relative to the use of compliant substrates for mismatched heteroepitaxial devices,
including the theoretical background, experimental results, and the directions for current efforts. Theories for relative
compliance and absolute compliance are presented. Key experimental results are summarized for a number of compliant substrate
technologies, including cantilevered membranes, silicon-on-insulator, twist bonding, and glass bonding. Two approaches of
current interest, layer transfer and universal compliant trench (UCT) substrates, are presented as potential solutions to
the problem of limited absolute compliance in planar compliant substrates attached to handle wafers. 相似文献
43.
44.
MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress 总被引:3,自引:0,他引:3
T. J. de Lyon J. E. Jensen M. D. Gorwitz C. A. Cockrum S. M. Johnson G. M. Venzor 《Journal of Electronic Materials》1999,28(6):705-711
We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared
detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabrication
of high performance, large-area HgCdTe infrared focal-plane arrays on Si substrates. A key element of this heteroepitaxial
approach has been development of high quality CdTe buffer layers deposited on Si(112) substrates. We review the solutions
developed by several groups to address the difficulties associated with the CdTe/Si(112) heteroepitaxial system, including
control of crystallographic orientation and minimization of defects such as twins and threading dislocations. The material
quality of HgCdTe/Si and the performance of HgCdTe detector structures grown on CdTe/Si(112) composite substrates is reviewed.
Finally, we discuss some of the challenges related to composition uniformity and defect generation encountered with scaling
the MBE growth process for HgCdTe to large-area Si substrates. 相似文献
45.
介绍了p型异质外延金刚石膜磁阻效应和压阻效应的特性及应用展望,阐述了目前理论和实验的研究状况,提出了今后有待进一步研究的问题。 相似文献
46.
在PIN型光探测器的基础上制备了一种适用于波分复用系统的具有平顶陡边响应的长波长光探测器。利用低压金属有机化学气相沉积(LP-MOCVD)设备在GaAs衬底上二次外延生长了具有台阶结构的GaAs/AlGaAs滤波腔和InP基PIN光探测器。高质量的GaAs/InP异质外延采用了低温缓冲层生长工艺;具有台阶结构的Fabry-Pérot(F-P)滤波腔采用了纳米量级台阶的制备方法。通过理论计算优化了实现平顶陡边光谱响应特性的器件结构;并通过实验成功制备出了具有平顶陡边响应性能的光探测器,器件的工作波长位于1 549nm,峰值量子效率大于25%,0.5dB光谱响应线宽为3.9nm,3dB光谱响应线宽为4.2nm,响应速率达到17GHz。 相似文献
47.
介绍了一种GaAs基的长波长谐振腔增强型(RCE)光探测器.通过两步生长法,在GaAs村底上异质外延生长了InP-InGaAs-InP的p-i-n光吸收结构和GaAs/AlAs的分布布拉格反射镜(DBR).所制备的器件在1 549.4 nm处获得了67.3%的量子效率和17 nm的光谱响应线宽,在1 497.7 nm处获得了53.5%的量子效率和9.6 nm的光谱响应线宽,而InGaAs吸收层厚度仅为200 nm.采用单片集成法,工艺简单、易于产业化,随着缓冲层技术的发展,此种RCE光探测器的性能还将获得进一步提升. 相似文献
48.
M. W. Wanlass T. J. Coutts J. S. Ward K. A. Emery G. S. Horner 《Journal of Electronic Materials》1991,20(12):1019-1024
High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being
developed as a means of eliminating the problems associated with using single-crystal InP substrates (e.g., high cost, fragility, high mass density and low thermal conductivity). A novel device structure employing a compositionally
graded Ga
x
In1−x
As layer (∼8 μm thick) between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve
the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled
atmospheric-pressure metalorganic vapor-phase epitaxy (AP-MOVPE). Dislocation densities as low as 3×107 cm−2 and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates.
Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement
in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled
growth and post-growth annealing. The present work is concerned with the fabrication and characterization of thin-film InP
solar cells designed for operation at high solar concentration (∼100 suns) which have been prepared from similar device structures
grown on GaAs substrates. The cell performance is characterized as a function of the air mass zero (AM0) solar concentration
ratio (1–100 suns) and operating temperature (25°–80° C). From these data, the temperature coefficients of the cell performance
parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase
in efficiency and an improved temperature coefficient of efficiency. At 25° C, a peak conversion efficiency of 18.9% (71.8
suns, AM0 spectrum) is reported. At 80° C, the peak AM0 efficiency is 15.7% at 75.6 suns. These are the highest efficiencies
yet reported for InP heteroepitaxial cells. Approaches for further improving the cell performance are discussed. 相似文献
49.
本文叙述了化学气相沉积金刚石薄膜过程中,金刚石在光滑非金刚石衬底表面的成核行为,讨论了目前用于提高金刚石成核密度的一些典型方法的优点和不足。 相似文献
50.
Fabio Isa Marco Salvalaglio Yadira Arroyo Rojas Dasilva Mojmír Meduňa Michael Barget Arik Jung Thomas Kreiliger Giovanni Isella Rolf Erni Fabio Pezzoli Emiliano Bonera Philippe Niedermann Pierangelo Gröning Francesco Montalenti Hans von Känel 《Advanced materials (Deerfield Beach, Fla.)》2016,28(5):884-888