HDPE／PS／HDPE－g－PS合金的相容性和力学性能研究

用自制接枝共聚物ＧＲ－Ⅰ、ＧＲ－Ⅱ相容剂研究其对ＨＤＰＥ／ＰＳ共混物相容性和力学性能的影响。通过ＳＥＭ、ＤＭＡ、ＤＳＣ和力学性能测试表征，表明在ＨＤＰＥ／ＰＳ共混中加入这些相容剂其相容性和力学性能有一定提高     

衍射法细丝直径的精密测量

分析了激光衍射法测量细丝直径技术中影响精度的几个主要因素，研究了一种微弱衍射条纹的精密处理及识别技术，有效地提高了测量精度，实测结果表明，文中讨论的技术能在１０￣５０μｍ的范围内实现正负０．１μｍ的重复精度，分辨力优于０．０１μｍ。     

声光效应拉曼-内斯方程矩阵级数解法及声光调制器优化设计

提出一种求解正常声光相互作用拉曼 内斯 (Raman Nath)方程的矩阵级数解法 ,该解法直观方便且具有普遍性。计算结果表明 ,对Q =4 1π ,Bragg衍射的效率只有 97 5 % ;对非对称入射 ,以往的Raman Nath近似解误差较大 ;指出提高Bragg衍射效率的有效途径在于提高声光频率比并给出计算声光器件最优长度的计算公式。     

用超声波技术测量螺栓轴向紧固应力

超声波速度会因材料中加载应力而产生微小的变化，这一现象特别适用于测量螺栓的轴向应力。根据螺栓的轴向应力与超声波传播时间变化率的关系，作者研究了一种可直接测量螺栓轴同应力的仪器。实验结果显示，本项技术十分适合现场的实际应用。     

移动式宽频带高产额中子发生器

多用途中子发生器有着广阔的市场和应用领域 ,文章对移动式宽频带高产额中子发生器 ,在设计制造过程中所涉及到的技术难点 :绝缘尺寸小、频率适应范围宽、为中子管提供靶压的高压负载特性好等作了技术分析 ,使多用途中子发生器在更广阔的范围内应用 ,提供了广阔前景。     

用6805实现宽范围高精度频率测量

采用ＭＣ６８０５系列单片机并充分利用其定时器，选择测频法或测周法，可以实现定范围、高精度频率测量。此种方法只占用１个内部定时器，节省了硬件开销。     

Optimal H∞ general distance problem with degree constraint

In this paper the optimal H_∞, general distance problem, for continuous-time systems, with a prescribed degree on the solution is studied. The approach is based on designing the Hankel singular values using an imbedding idea. The problem is first imbedded into another problem with desirable characteristics on the Hankel singular values, then the solution to the original problem is retracted via a compression. The result is applicable to both the one-block and the four-block problems. A special case is given for illustration.     

Magnetization and rotation of MTG HTSC ring in magnetic field

The magnetization of a melt-texture growth (MTG) HTSC ring has been studied. It is shown that the magnetic field inside the ring is larger than the external field under a certain range of external magnetic fields. We have also investigated the magnetic field dependence of the response of a detective coil near a rotating superconducting ring. The responses of the MTG sample are different for different cooling methods.     

关于我国的粮食标准

本文总结了我国粮食标准的历史，将历次我国小麦标准和小麦粉标准的技术指标，分别集中列表，并据以估计我国优质小麦标准的良好发展前景。     

Mixed Mode VLSI Implementation of a Neural Associative Memory

A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible.