The terminal protein of the linear DNA plasmid pGKL2 shares an N-terminal domain of the plasmid-encoded DNA polymerase

The 36K protein attached at the 5′ end of the linear DNA plasmid pGKL2 from the yeast Kluyveromyces lactis was first purified and characterized. The terminal protein was purified from cells (1 kg wet weight) by ammonium sulphate precipitation and two rounds of centrifugation to equilibrium in CsCl gradients. The pGKL2 was present only in the post-microsomal supernatant. Approximately 10 mg of the purified pGKL2 was recovered and digested with DNase I. The terminal protein (final ca. 0·8 mg) was homogeneous by electrophoresis and we determined the N-terminal amino acid sequence up to ten residues, showing that it existed in the cryptic N-terminal domain of pGKL2-ORF2 (DNA polymerase) sequence.     

Analysis of a 26 756 bp segment from the left arm of yeast chromosome IV

The nucleotide sequence of a 26·7 kb DNA segment from the left arm of Saccharomyces cerevisiae chromosome IV is presented. An analysis of this segment revealed 11 open reading frames (ORFs) longer than 300 bp and one split gene. These ORFs include the genes encoding the large subunit of RNA polymerase II, the biotin apo-protein ligase, an ADP-ribosylation factor (ARF 2), the ‘L35’-ribosomal protein, a rho GDP dissociation factor, and the sequence encoding the protein phosphatase 2A. Further sequence analysis revealed a short ORF encoding the ribosomal protein YL41B, an intron in a 5′ untranslated region and an extended homology with another cosmid (X83276) located on the same chromosome. The potential biological relevance of these findings is discussed. The sequence was submitted to the EMBL database under Accession Number X96876.     

通信领域2G、3G、4G技术专利申请状况分析

【】移动通信技术的发展日新月异,随之相应的专利申请量也日益增多,本文对移动通信领域2G、3G、4G技术在中国的专利申请状况进行了分析,给出了2G、3G、4G技术在中国的专利申请量分布,介绍了申请人排名,分析了通信领域主要申请人在中国的历年申请状况。     

激光烧结快速合成La2(MoO4)3材料

针对已有的固相合成法和湿化学法等合成方法中存在的工艺复杂、反应时间长、反应不充分等缺点,提出应用激光烧结快速合成技术制备质地致密、成型较好的La2(MoO4)3材料。对样品的拉曼光谱，X射线衍射,样品表面形貌和热膨胀性进行了分析和讨论。结果表明，制备的样品基本上是单一相的La2(MoO4)3，扫描电镜显示出样品表面多为细小晶粒的团聚体;能谱分析表明样品表面上各小晶粒的成分基本相同，说明得到的样品成分均匀;La2(MoO4)3在低温下是单斜结构，达到室温及以上时为正交结构，其极有可能是各向异性负热膨胀材料。     

相控阵机载雷达杂波抑制的时—空二维自适应滤波

本文提出了一种机载预警侧面相控阵雷达抑制地杂波的时-空二维自适应方法,该方法先对各列子阵的数据作多通道的多卜勒滤波,然后分别对相同多卜勒滤波器输出的数据作Capon自适应处理。理论分析和计算机模拟结果表明,本文方法的杂波抑制性能在天线阵元存在一定的随机幅度和相位误差情况下损失不大,对阵元失效也不敏感。     

Majority and minority carrier traps in monocrystalline CulnSe2

Electron and hole traps in Bridgman-grown monocrystalline CuInSe₂ were investigated by carrying out deep level transient spectroscopy measurements on homojunctions, Al-CuInSe₂ (p-type), and Au-CuInSe₂ (n-type) Schottky junctions. Three hole trap levels and two electron trap levels were observed on these devices. Effects of oxygen and etching on the electron trap level at 182 ±15 meV from the conduction band edge were specifically studied. It was found that the election trap densities in the homojunctions prepared using the CuInSe₂ samples treated in NH₂NH₂ solution, which absorbes oxygen atoms in the samples, were larger than the electron trap densities in the homojunctions prepared using untreated samples. Moreover, the electron trap densities in the homojunctions after prolonged heat treatment in O₂ were less than that without prolonged heat treatment. The results thus suggested that oxygen atoms in CuInSe₂ can reduce the electron trap density of p-type CuInSe₂. The effects of chemical etching on these electron traps were also studied. The excess indium atoms in the CuInSe₂ were considered to affect the electron traps.     

T(z) diagram and optical energy gap values of Cd1−zMnzGa2Se4 alloys

The T(z) diagram of the system Cd_1−zMn_zGa₂Se₄ was obtained from x-ray diffraction and differential thermal analysis measurements. It was found that at lower temperatures, a single phase solid solution occurs across the whole compositional range and values of lattice parameters were determined as a function of z. At higher temperatures, an order-disorder transition occurs, in the range 0 < z < 0.6 to a partially ordered tetragonal structure and for 0.6 < z < 1. 0 to a disordered defect zinc-blende structure. In the T(z) diagram, both the ordering boundary and the solidus curve appear to show discontinuities at z = 0.6, corresponding to the change in the disordered phase. It is suggested that the symmetries of the terminal compounds are different one from the other. Optical absorption measurements were made at 300 K to show the variation of the direct optical energy gap E_o with z, and again the values appear to divide into two parts below the above z = 0.6.     

氧化铈掺杂SrCoO3-δ的结构与电导性能

采用固相反应法合成了Sr1-xCexCoO3 -δ(x =0 .0 5～ 0 .2 )阴极材料 ,并研究了其结构和电导性能。XRD图谱表明SrCoO3 -δ体系中CeO2 固溶量为 10 %～ 15 % (质量分数 ) ,且随着氧化铈含量的增加体系稳定性略有降低 ,晶胞出现收缩。当氧化铈的掺杂量为 15 %时的电导率高于其它固溶量的组分 ,在 35 0～ 4 0 0℃达到最高值 ,超过了5 0 0S/cm ,满足了作为低温SOFC阴极材料的电学性能的要求。     

Al2O3基陶瓷抗弹性能的研究

以添加ZrO2的Al2O3基陶瓷材料为研究对象,经过成分优化设计以及成型、烧结工艺优化设计,制备出性能高且稳定的材料;并采用模拟穿甲弹和破甲弹对装甲钢、几种陶瓷材料进行了对比试验,测定了防护系数;并分析了几种材料抗穿、破甲弹防护系数不同的原因。     

起始粉末粒径对Al2O3-TiC陶瓷力学性能的影响

热压烧结制备了Al2O3和Al2O3-TiC复合陶瓷。研究了起始粉末粒径对Al2O3-TiC复合陶瓷力学性能的影响。试验结果表明,添加TiC显著地提高了氧化铝陶瓷的力学性能,σf和K1c分别提高了70％和90％。其中大颗粒TiC对氧化铝陶瓷的增韧尤为有利,其裂纹偏转增长了扩张路径,提高了材料的断裂抗力。