卤素灯快速退火在硅浅结器件中的应用

用卤素灯快速退火工艺代替原始的炉退火工艺,使全离子注入的硅双极浅结器件的杂质浓度更高、结深更浅,从而有效地改善了器件的电参数性能。用这种新工艺制做的分频器,工作频率由原来的1300MHz提高到了1600MHz。该工艺操作方便,节省能源,均匀性、重复性、可控性都大大地优于原始炉退火工艺。     

Rapid thermal annealing of si implanted gaas

Rapid thermal annealing (RTA) technology offers potential advantages for GaAs MESFET device technology such as reducing dopant diffusion and minimizing the redistribution of background impurities. LEC semi-insulating GaAs substrates were implanted with Si at energies from 100 to 400 keV to doses from 1 × 10¹² to 1 × 10¹⁴/cm². The wafers were encapsulated with Si₃N₄ and then annealed at temperatures from 850-1000° C in a commercial RTA system. Wafers were also annealed using a conventional furnace cycle at 850° C to provide a comparison with the RTA wafers. These implanted layers were evaluated using capacitance-voltage and Hall effect measurements. In addition, FET’s were fabricated using selective implants that were annealed with either RTA or furnace cycles. The effects of anneal temperature and anneal time were determined. For a dose of 4 × 10¹²/cm² at 150 keV with anneal times of 5 seconds at 850, 900, 950 and 1000° C the activation steadily increased in the peak of the implant with overlapping profiles in the tail of the profiles, showing that no significant diffusion occurs. In addition, the same activation could be obtained by adjusting the anneal times. A plot of the equivalent anneal times versus 1/T gives an activation energy of 2.3 eV. At a higher dose of 3 × 10¹³ an activation energy of 1.7 eV was obtained. For a dose of 4 × 10¹² at 150 keV both the RTA and furnace annealing give similar activations with mobilities between 4700 and 5000 cm²/V-s. Mobilities decrease to 4000 at a dose of 1 × 10¹³ and to 2500 cm²/V-s at 1 × 10¹⁴/cm². At doses above 1 × 10¹³ the RTA cycles gave better activation than furnace annealed wafers. The MESFET parameters for both RTA and furnace annealed wafers were nearly identical. The average gain and noise figure at 8 GHz were 7.5 and 2.0, respectively, for packaged die from either RTA or furnace annealed materials.     

Enhancement of actuation ability of ionic-type conducting polymer actuators using metal ion implantation

In this study, we present the results and implications of an experimental study into the effect of gold-ion implantation on the actuation performance of ionic-type conducting polymer actuators, represented here by cantilevered tri-layer polypyrrole (PPy) actuators. We implant gold ions beneath the outer surfaces of PPy-based conducting polymer layers of the actuators in order to increase the conductivity of these layers, and therefore improve the overall conductivity of the actuators. A Filtered Vacuum Cathode Arc (FVCA) ion source was used to implant gold particles into the conducting polymer layers. Electrode resistance and capacitance, surface resistance, current response, mechanical work output of the actuator samples were measured and/or calculated for the actuator samples with and without gold implantation in order to demonstrate the effect of the gold-implantation. The current passing through the conducting polymer electrodes during their ‘electrochemomechanical’ actuation was measured to determine the charging time constant of the actuators. The mechanical displacement output of the actuators was recorded. The results demonstrate that the conductivity of the actuators increases noticeably, which has a flow on effect on the current response (i.e., charge injected into the polymer layers) and the mechanical work output. While the gold implanted actuators had a higher mechanical stiffness therefore a smaller displacement output, their time constant is smaller, indicating a higher response speed. The gold-implanted actuators generated a 15% higher mechanical work output despite the adverse effects on the polymer of the vacuum processing needed for the ion implantation.     

离子注镧对镍表面氧化膜生长机制及应力水平的影响

对纯镍及其表面离子注镧样品在900℃空气中的恒温氧化规律进行了研究.采用扫描电子显微镜(SEM)和透射电子显微镜(TEM)对NiO膜的微观形貌和结构进行测试.采用激光拉曼(Raman)谱和X射线衍射仪(XRD)对两种样品表面氧化膜的应力状态进行测量.采用二次离子质谱(SIMS)对氧化膜内元素Ni、O和La的深度分布情况进行了测量.结果表明,离子注镧显著降低了镍的恒温氧化速率,细化了表面NiO膜的晶粒尺寸,同时,将氧化膜生长的生长机制由未注镧前Ni~(2+)阳离子向外扩散转变为注镧后O~(2-)阴离子向内扩散为主.X射线衍射和激光拉曼测量均反映出注镧引起的膜内应力降低效应,并且,结合氧化膜内应力深度分布的不均匀性及膜生长过程中存在的稀土元素效应对两种应力测量结果之间存在的偏差进行了细致分析.     

金属中强束流离子注入的温升效应

根据非线性热传导方程,用有限差分方法计算金属中强束流离子注入的温升效应给出了温升和温度分布曲线,以及样品表面温度与离子能量、剂量率、靶座温度、样品厚度等的关系曲线还计算了脉冲注入和扫描注入时的温升过程     

稀土铒和铬离子注入对电机护环钢SCC性能的影响

研究了解和铬离子高、中能量重迭注入对５０Ｍｎ１８Ｃｒ４电机护环钢ＳＣＣ性能的影响．ＳＣＣ对比试验结果表明：（１）在ＱＨＪ－７９标准硝酸盐介质中，离子注入试样的ＳＣＣ出现时间（ｔｆ）比不经注入试样的延长了６倍以上，致钝和维钝电流密度下降了一个数量级；（２）在阴极充氢条件下，两种试样均对氢致开裂（ＨＩＣ）不敏感，但离子注入可抑制氢诱发腐蚀．用ＡＥＳ－ＰＲＯ、ＲＢＳ、ＸＰＳ－ＰＲＯ、ＥＤＡＸ、金相及电化学方法分析讨论了护环钢在ＱＨＪ－７９标准介质中的ＳＣＣ机理和离子注入改善ＳＣＣ抗力及抗氢锈发腐蚀性能的机制．     

钽离子注入对锂硅酸盐电极玻璃电性质的影响

本文在Ｌｉ２Ｏ－Ｌａ２Ｏ３－Ｔａ２Ｏ５－ＳｉＯ２系统电极玻璃中注入５０ｋｅＶ，剂量分别为５×１０６、１×１０１７、２×１０１７ｉｏｎｓ／ｃｍ２的Ｔａ＋离子，测定了注入前后电导率、Ｔｋ－１００的变化，计算了活化能。结果表明，Ｔａ＋离子注入后，随剂量的增加，电导率和Ｔｋ－１００增加，活化能降低。并探讨了注入后电导率和Ｔｋ－１００变化的机理。     

Effect of the post-As+-lmplantation thermal treatment on MBE HgCdTe optical properties

HgCdTe epilayers were grown by molecular beam epitaxy. A series of As⁺-implanted CdTe and HgCdTe epilayers annealed under different temperatures were investigated by photoluminescence spectroscopy. More As⁺ ions can occupy the Te sublattice after the samples were annealed at 450°C, and the acceptor level of As⁺ on the Te sublattice for HgCdTe material (x ≈ 0.39) is 31.5 meV. The Raman spectrum study indicates a recovery of the crystalline perfection after the post-As⁺-implantation thermal treatment.     

高压隔离开关电触头性能改善探讨

在分析中国高压隔离开关电触头运行问题的基础上,对国内外隔离开关电触头性能改善的技术和生产工艺进行了总结。提出了采用碳离子注入方法改善高压隔离开关银基电触头耐磨性、导电性、抗氧化性的方案,为中国高压设备企业改善高压隔离开关性能提供了新的思路。     

Internal oxidation of lithiated nickel

It is difficult to alloy lithium and nickel using conventional techniques. One alternative is ion implantation. Implantation of lithium in nickel, at 500°C to doses at which the solubility is exceeded, causes an unusual form of precipitation. Electron microscopy revealed the precipitates to have truncated octahedral shapes with {111} planes for sides, and {100} planes truncating the corners. They resemble voids and helium bubbles in nickel. The lithium precipitates on dislocations. The alloy was internally oxidized in order to obtain evidence for lithium presence in nickel. Electron diffraction analysis revealed the presence of Li_xNi_1–xO compound with an ordered NaCl-type structure, forming topotaxially with the nickel, in thin film form, inside the octahedra. Attempts to fabricate the ordered Li_xNi_1–xO were unsuccessful; only the disordered form could be produced. It was concluded that the presence of the crystallographic planes of nickel and/or the thin film oxide form are required for the formation of the ordered compound.Work supported by the U.S. Department of Energy.