提高考夫曼型离子源束流密度的研究

本文依据金属的索未菲自由电子模型的量子统计理论结果，对提高考夫曼型离子源束流密度进行了研究，取得了一些有价值的结果。     

微通道板大量放气的原因

本文分析了微通道板(MCP)在烘烤和电子轰击下大量放气的机理,结合有关实验数据给出了放气成分及放气量的相对大小。指出:放出的这些气体不仅对光阴极有毒害,而且对MCP自身的次级电子发射性能还有不良影响,即降低次级电子产额。在此基础上提出了解决MCP大量放气的方法。     

Electron-beam doping-electron radiation effects in impurity overlayers and semiconductor substrates

3-9 MeV electrons were used to introduce impurity Ge atoms into Si wafers from Ge sheets, which are in contact with a Si surface at 20-60‡C in water bath. Concentration-dependent diffusivities of ∼10-18-10^-14 cm²sec^-1 for Ge in Si were measured. Activation energies of sputtering yield for Ge and of the diffusivity of Ge in Si are estimated to be ∼0.3 eV and ∼0.58 eV, respectively. In a case of hot (∼250‡C) irradiation in ∼1x10^-3 Torr vacuum, also the similar concentration profiles of impurity atoms in the substrates were observed.     

Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling

Simultaneous measurements of electrical conductivity, the Hall coefficient, and photoluminescence (PL) spectra of ion-milled Hg_1 − xCd_xTe films (x ∼ 0.30 and 0.38) were performed during post-milling ageing of the films at 293 K. In the course of the PL study, a ‘relaxation’ of the blue-shift of the PL band of ion-milled Hg_0.70Cd_0.30Te was observed. The relaxation was caused by the decrease of the electron concentration due to gradual disintegration of defects induced by the milling. It is shown that while ion milling substantially changes the electrical properties of Hg_1 - xCd_xTe, its PL spectrum in the long-term is affected insignificantly.     

Focused ion beam (FIB) etching to investigate aluminium-coated polymer laminates subjected to heat and moisture loads

Multilayered aluminium-coated polymer laminates are the common barrier envelopes of vacuum insulation panels used as high performance thermal insulation in building applications. These laminates are made of up to ten distinct layers including three aluminium barrier layers applied by vacuum web coating. During their expected lifetime, which is required to last longer than 20 years, they will be subjected to heat and moisture loads induced by internal and external climatic conditions. This paper investigates the deteriorations of the barrier function of two different laminates commonly used for the production of vacuum insulation panels. These were subjected to well defined exterior heat and moisture loads and investigated by means of focused ion beam etching. Delamination of the polyurethane adhesive layers and stress induced relaxation in them are made visible. Oxidised aluminium layers are also detected by this method.     

循环氩离子轰击-等离子体增强化学气相沉积 TiN 膜组织与性能研究

分析对比了常规ＰＥＣＶＤＴｉＮ膜与循环氩离子轰击－ＰＥＣＶＤＴｉＮ膜组织与性能的差异。结果表明，循环氩离子轰击－ＰＥＣＶＤＴｉＮ膜较之常规ＰＥＣＶＤＴｉＮ膜，其组织细小致密，膜内残余氯含量显著降低，膜的硬度与耐磨性提高，但膜－基体结合强度没有显著改变。     

软电离质谱法与聚合物分析

本文简要叙述了软电离质谱法在聚合物分析中的应用实例。     

H型结构垂直腔面发射激光器

报道了一种结构新颖的Ｈ型垂直腔面发射激光器。器件是由钨丝掩膜一次质子轰击和选择腐蚀相结合制备的，实验已实现在脉宽为２０μｓ，占空比为１１０的脉冲电流条件下的室温激射。     

Effects of rf power on the structural properties of carbon nitride thin films prepared by plasma enhanced chemical vapour deposition

Carbon nitride (CN_x) thin films were deposited by radio frequency plasma enhanced chemical vapour deposition (rf PECVD) technique from a gas mixture of methane (CH₄), hydrogen (H₂) and nitrogen (N₂). The effects of rf power on the structural properties of CN_x thin films were discussed in this paper. It was found that rf power had significant effects on the growth rate, structural and morphological properties of the deposited films. The point of transition of the growth rate trend marked the equilibrium condition for primary and secondary reactions in growth kinetics of the film with respect to rf power. The films grown at this optimum rf power were most ordered in structure with high surface roughness and had the lowest N incorporation. This work showed that H etching effects and ion bombardment effects increase with increase in rf power and strongly influenced the structure of the CN_x films.     

Bombardment Induced Electron-Capture Processes at Sodium Halide Surfaces

Discrete features observed in the energy distribution of electrons emitted from ion-bombarded sodium halide surfaces can be attributed to a new type of collisional deexcitation mechanism. Such a mechanism involves sodium atoms in bombardment-excited autoionizing states that are the result of cascade collisions within the crystal lattice. This deexcitation process, in contrast to that for a metal, is not simply a consequence of the inner-shell lifetime of the initial collisionally excited sodium Na⁺* ion. Rather, the deexcitation consists of a sequence of lattice collisions during which the excited Na⁺* ion captures an electron to form the inner-shell-excited Na⁰* states responsible for the observed transitions. The formation of such autoionizing Na⁰* states is described within the framework of a new model in which excitation processes and localized collisional electron-transfer mechanisms are taken into account. These localized electron-transfer processes make possible new channels for electronic deexcitation, chemical dissociation, and defect production; they are critical for understanding inelastic ion-surface collisions in solids.