Energy dependent structure changes in ion beam deposited a-C:H

The present study investigates the effect of ion energy in the form of acceleration potential on the structure of ion beam deposited a-C:H films using Raman spectroscopy, FTIR spectroscopy and profilometry. The results indicate that for low acceleration potentials (100–200 V), the sp² fraction of the film becomes more ordered as the acceleration potential increases. However, FTIR indicates that the hydrogen bonding in the film is unaffected. For mid-range acceleration potentials (200–800 V) the film structure remains stable, then, as the acceleration potential is increased above 800 V there is a further increase in the order of the sp² fraction in the films and a change in the hydrogen bonding in the film. These structure changes suggest that two separate energy dependent processes effect the structure of IBD a-C:H; a densification/relaxation process at low acceleration potentials and ion damage/sputtering processes at higher acceleration potentials.     

基于Lon Works现场总线的热量采集系统的开发

介绍了一种由LonWorks现场总线与Neuron3150芯片相结合开发的智能热量采集器,阐述了系统的硬件组成及部分主要软件程序,实现通过上位机向控制中心传送各点热量信息,完成实时数据显示,进而达到智能控制效果。此外,综合运用了Lon总线的网络功能对温室中各个节点热量表进行采集和记录,采集实验数据,为深入研究提供较好的实验依据。图5参9     

Sputter-induced trap states at oxidized and grafted silicon surfaces: A comparative study

This paper analyzes the role of sputtering geometries on the conduction mechanism of metal-insulator-semiconductor devices where the insulating film is either SiO_x or a grafted organic (sub)monolayer. The current-voltage characteristics were analyzed and correlated to the presence of traps in the band gap. The most influential defect was found to be related to interstitial Si (Si_i). We will show that its deactivation moves the Fermi level towards other defect/impurity levels depending on both the insulating layer and the deposition geometry. Si_i density decrease is observed when samples are less exposed to sputtered particles and radiation flow, although major effects are also correlated to the degradation of the organic monolayer upon sputtering.     

Molecular dynamics simulations of low-energy argon ion sputtering of copper clusters on polyethylene surfaces

The normal bombardment of the targets consisted of single 13-, 27- or 39-atom copper cluster on a surface of polyethylene by Ar ions with energies of 100, 200 and 400 eV is examined using molecular dynamics simulation incorporating long-range many-body covalent bonding potential for hydrocarbons and a potential based on a embedded atom model for copper. Sputtering yield and its dependence on the energy of bombarding ion and size of the pre-deposited copper cluster are discussed.