基于MEMS微电极芯片的电穿孔系统

报道了一种基于微加工金电极的细胞电穿孔芯片及一套完整的细胞电穿孔系统。该系统能够在多种细胞系中实现高效细胞电穿孔(对典型HEK-293A(人胚胎肾细胞)细胞的穿孔效率高于90%,3T3-L1(小鼠胚胎成纤维细胞)的电穿孔效率高达80%)。并且具有手动模式和自动模式。同时,由于基于独特的电极设计,其所需电压也远低于现有设备(典型工作电压为60 V),成本更低,操作更安全。     

基于LabVIEW的超声信号小波阈值去噪方法

图形化编程软件LabVIEW具有强大的信号采集功能,但对于需要进行大量数据运算处理的复杂应用就显得力不从心。数学工具软件MATLAB强大的计算功能及较高的编程效率可以弥补LabVIEW开发的不足。文中结合两者软件的优点,采用混合编程的方法进行实际工程的去噪处理,同时针对超声缺陷回波信号信噪比低、易于被噪声淹没的特点,选取小波阈值去噪的方法,通过调用LabVIEW里的MATLAB Script节点对信号进行仿真实验,仿真结果表明采用stein的无偏风险阈值去噪的方法消噪效果最为明显,得到较高的信噪比。     

激光测速仪在宽厚板轧机后测长的运用

随着国内厚板产量的增加,其市场竞争日趋激烈。为了更好的谋求发展,莱钢宽厚板厂在降低生产成本的同时,通过技术改造极大地提高产品的质量。因为板坯成材规格需要精确的长度数据,所以宽厚板板坯长度的精确测量就显得非常重要。本文主要介绍激光测速仪在轧机后测长系统中的应用。     

基于自由摆的平板精确控制与激光追踪系统

以TI公司的MSP430F5438单片机为控制核心,结合步进电机和精密电位器WDD35D-4,实现了基于自由摆的平板控制与激光追踪系统。当摆杆摆角为45°～60°时,平板可以承载8枚一元硬币,并在5个摆动周期内维持稳定;当摆杆摆角为30°～60°时,固定在摆杆平板上的激光笔可以在15s内找到并跟踪1.5m远处的靶心。     

一种改进的基于多项式滤波的稳态检测方法

化工过程的数据中常常含有较多的随机误差和粗差干扰,导致传统的稳态检测方法无法得到准确的结果,从而降低系统故障诊断的可靠性。针对实际的工业过程数据,提出一种融合自适应平滑技术的稳态检测方法,该方法首先以基于导数分析的自适应平滑算法进行降噪处理,消除随机误差的影响,然后引入阈值拟合技术进一步抑制粗差干扰,以多项式滤波方法对数据进行稳态检测,根据测量信号的趋势特征确定过程是否处于稳态。仿真实验研究表明:融合自适应平滑技术的稳态检测方法能够克服传统稳态检测方法中随机误差和粗差干扰对检测结果的影响,进而显著提高稳态检测处理的准确性,检测结果明显优于传统的基于多项式滤波的检测方法。     

CO2 laser annealing of plasma-deposited high-Tcsuperconducting thick films

Recent advances in the fabrication of high-T _c superconducting thick films demand processing techniques which can eliminate film/substrate interdifiusion that occurs during subsequent post-annealing heat treatment after the film is deposited, thereby limiting the application of the thick films for devices. The present study evaluates laser annealing techniques for plasma-deposited Y-Ba-Cu-O thick films using a high-energy CO₂ laser (10.6m) in a continuous wave mode. The results are compared with those obtained by conventional furnace annealing techniques necessary for post-heat treatment of as-deposited superconducting thick films. The high-T _c superconducting phase is recovered by cationic diffusion during subsequent post-annealing heat treatment. Crystallographic phases and microstructural characterization have been performed using XRD, SEM, and EPMA analytical techniques. The significance of the technology lies in the elimination of film/substrate interdiffusion problems, thereby resulting in high-quality superconducting thick films. The technology will significantly reduce the post-annealing times usually required by conventional furnace annealing techniques.     

A universal dependence for thermal conductivity of metals and dilute alloys

A universal curve relating the maximum of thermal conductivity and its respective temperature with the residual electrical resistivity has been proposed for metals and dilute alloys. Based on the equation of that curve, a comparative analysis of selected literature data of thermal conductivity of metals, which have residual electrical resistivity in the range 10^–11<₀<10^–5. cm, have been performed. Using the data for 33 metals, confirmation of the Wiedemann-Franz law for the impurity component/T of thermal conductivity was obtained, which means that _th/_el1, where _th and _el are the parameters of the electron-lattice defect interaction obtained from measurements of thermal and electrical conductivity, respectively. Examples of the failure of the Wiedemann-Franz law are also presented, exhibiting the values of _th/_el in the range 0.16 to 25. Measurements of thermal conductivity in the range 2 to 20 K and determination of the residual electrical resistivity for the samples of Cd doped with Zn and quenched were performed, resulting in values _th/_el1.     

Majority gates vs. general weighted threshold gates

In this paper we study small depth circuits that contain threshold gates (with or without weights) and parity gates. All circuits we consider are of polynomial size. We prove several results which complete the work on characterizing possible inclusions between many classes defined by small depth circuits. These results are the following:

Transistors made in laser recrystallized polysilicon on insulator films

lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5μm to 40μm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out to realisemosfets on this material. Channel mobilities upto 450 cm²/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the other gate has been investigated. Comparison of theI _D v-V _D curves of the devices with physical models was found in good agreement.     

Thermal expansion of Pyros from 20 to 1273 K

Pyros, which is a Ni-base alloy (82% Ni, 8% Cr, 4% W, 3% Mn, and 3% Fe), has been used extensively in France since 1926 as a temperature sensor and as a reference material for thermal expansion measurements. In this paper we present recent data on the expansion and expansivity of Pyros from 20 to 1273 K. Expansivity results, obtained by taking the derivative of a cubic-spline polynomial fitting performed to the L/L experimental data, show that Pyros is a stable material in the 20 to 1273 K temperature range. Furthermore, since the expansivity values are similar to those of steels, Pyros should be of special interest to laboratories which are concerned with expansion measurements on steels. Therefore, we suggest that Pyros be considered as a suitable reference material for thermal expansion measurements on steels, and until more accurate results are obtained, we propose our results as reference data between 20 and 1273 K.Paper presented at the Ninth Symposium on Thermophysical Properties, June 24–27, 1985, Boulder, Colorado, U.S.A.