Ta/Ta2O5/Cu结构制备及应用性能研究

介绍了以Ta/Ta₂O₅/Cu为结构的平板MIM电容器的制备方法和性能测试,探究金属Cu直接作为钽电解电容器阴极层的可行性。通过阳极氧化法在钽箔表面制备非晶态的Ta₂O₅薄膜,以化学镀铜、磁控溅射镀铜两种镀铜工艺制备Ta/Ta₂O₅/Cu结构,并对所得结构进行结构表征和性能测试。实验结果表明：不同镀铜方式制备的Ta/Ta₂O₅/Cu结构在电学性能测试过程中都没有表现出电容特性,正负极之间的电阻仅有0.7Ω;以金属Cu直接作为钽电容器的阴极层会导致金属铜在测试过程中被氧化成铜离子从而进入Ta₂O₅介质层中,进而导致Ta₂O₅的击穿,因此金属铜不适合直接作为钽电容的阴极层。     

高导电性ZAO陶瓷靶材及薄膜的制备

用热等静压法烧结制备了高导电性ZAO(铝掺杂氧化锌)陶瓷靶材,并用直流磁控溅射法制备出ZAO透明导电薄膜。靶材的致密度达98.7%,电阻率为2.2?03·cm;制得薄膜的最低电阻率为9.3?04·cm,可见光平均透射率大于85%。浅析了靶材的组织结构及靶材的电学、力学性能和薄膜制备的主要实验参数对其光、电性能的影响。     

长直SiO_2纳米线的制备和结构表征

采用磁控溅射法,以Si粉和溅金Si(111)为原料,加入C粉,在Si(111)衬底上制备无定形SiO2纳米线。首先,在Si(111)衬底上分别溅射厚度为18和36 nm的Au。然后,在1 100℃条件下处理80 min。用扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、傅里叶红外光谱(FTIR)和X射线衍射方法 (XRD)等测试手段对退火后的SiO2纳米线的表面相貌、微观结构进行分析。结果表明,反应后有大量长而直的SiO2纳米线生成。而且随着溅射Au厚度的增加,SiO2纳米线的数量增多,且长度更长。这表明,SiO2纳米线的生长与溅射Au的厚度密切相关。     

The effects of substrate bias,substrate temperature,and pulse frequency on the microstructures of chromium nitride coatings deposited by pulsed direct current reactive magnetron sputtering

Recently, great attention has been devoted to the pulsed direct current (DC) reactive magnetron sputtering technique, due to its ability to reduce arcing and target poisoning, and its capability of producing insulating thin films. In this study, chromium nitride (CrN) coatings were deposited by the bipolar symmetric pulsed DC magnetron reactive sputtering process at different pulse frequency, substrate bias voltage, and the substrate temperature. It was observed that the texture of CrN changed from (111) to (200) as substrate temperature increased to 300°C as deposited at 2 kHz without substrate bias. With increasing pulsing bias and pulse frequency of target, predominated (200) orientation of CrN film was shown due to the ion bombardment/channeling effect to preferentially sputter those unaligned planes. For the CrN coatings deposited with pulsed biasing, the grain size decreased with increasing pulse frequency and substrate bias, whereas the surface roughness showed a reverse trend. The deposition rate of the CrN films decreased with increasing pulse frequency. It was concluded that the pulse frequency, substrate bias, and substrate temperature played important role in the texture, microstructure, and surface roughness of the CrN coatings deposited by the pulsed DC magnetron sputtering process.     

c轴择优取向ZnO薄膜RF溅射工艺研究

通过射频磁控溅射在Si(100)基片上制备了ZnO薄膜,该文着重研究了磁控溅射中各生长参数如衬底温度、氧分压及后处理工艺等因素对氧化锌薄膜结晶性能、表面形貌、择优取向与微结构的影响,并对溅射工艺与取向、结构的关系进行了分析比较,从而确定了最佳溅射及后处理条件并获得了c轴择优取向的ZnO薄膜。     

衬底温度对射频磁控溅射制备氮化硅薄膜的影响

采用射频磁控反应溅射技术,以N2和Ar为反应气体在普通玻璃表面沉积了氮化硅(SiN)薄膜;利用X射线衍射仪、扫描电子显微镜、X射线能量耗散谱、台阶仪和紫外-可见光谱,研究了不同衬底温度对SiN薄膜的相结构、表面形貌和成分、薄膜厚度以及光性能的影响.结果表明;制备的SiN薄膜为富硅结构;提高衬底温度,可增加光学带隙;当衬底温度为450℃时,薄膜由尺寸约为40 nm的SiN晶粒组成,且在紫外-可见光区的透过率高达90%.     

雷达用磁控管自动老炼测试系统的设计

阐述了一种磁控管自动老炼测试系统的工作原理,介绍了其主要技术指标与系统组成,并给出了其软件的设计。该系统采用集中监控系统实现电源的监控以及磁控管性能数据的实时采集、显示和录取,提高了老炼测试效率和自动化水平。     

Au/(Si/SiO2)/p-Si结构中电流输运机制的研究

用射频磁控溅射法制备了Si/SiO2薄膜,利用Au/(Si/SiO2)/p-Si结构的I-V特性曲线对其输运机制进行了分析。结果表明,在较高的正向电场下,载流子主要是以电场协助隧穿(Fowler-Nordheim隧穿)方式通过氧化层,而在低场范围内和反向电场下,电流的产生则以热电子发射的方式为主。     

High power impulse magnetron sputtered p-type γ-titanium monoxide films: Effects of substrate bias and post-annealing on microstructure characteristics and optoelectrical properties

In view of wide potential use as p-type oxide semiconductor of titanium monoxide (TiO), it is deposited in this work by using high power impulse magnetron sputtering (HIPIMS), which is known to provide less hysteresis effect in reactive sputtering and better control in stoichiometry. A strong correlation among the preparation parameters on the microstructure and optoelectrical characteristics of the obtained Ti-O films are investigated.Experimental results show that the crystallinic cubic γ-TiO can be directly grown on unheated glass substrate. In regard to the effects of substrate bias and post-annealing, the as-grown γ-TiO transfers into rutile (R-TiO₂) at a critical substrate bias voltage of −125 V or post-annealing temperature of 500 °C. For the purpose of p-type channel layer in transistor, the optimum γ-TiO film exhibiting a high hole mobility of 8.2 cm²/V s is grown at the substrate bias voltage of −25 V and followed by the post-annealing at 400 °C.     

钛合金表面耐冲蚀Zr(AlCu)N涂层的结构与性能

为了提高钛合金TC6的耐冲蚀性能,采用磁控溅射技术在钛合金上沉积不同Zr(A1Cu)N涂层,考察了涂层的硬度、韧性和耐冲蚀性能,采用场发射扫描电镜(FESEM),X射线衍射(XRD)和X射线光电子能谱(XPS)分析其微观结构.结果发现:向ZrN涂层中加入20at％Cu后(Zr0.8Cu0.2N),显著提高了涂层的韧性,...