排序方式： 共有234条查询结果，搜索用时 15 毫秒
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提出一种基于分数阶微积分理论的有源压控忆阻负载峰值电流型Buck-Boost变换器模型。在推导其在电感电流连续模式下电路方程的基础上,通过数值仿真分析并验证Buck-Boost变换器的复杂动力学行为。仿真实验结果表明,随着系统阶次的变化及忆性负载的加入,系统分岔点均发生后移,系统稳定工作范围大大增加;对整数阶忆阻负载变换器模型施加两时间尺度参数激励与外接激励,研究当慢变参数频率与系统固有频率产生量级差时的簇发振荡行为,随着系统激励幅值A的变化,系统会出现概周期的单-Hopf簇发振荡。 相似文献
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Hanchan Song Min Gu Lee Gwangmin Kim Do Hoon Kim Geunyoung Kim Woojoon Park Hakseung Rhee Jae Hyun In Kyung Min Kim 《Advanced materials (Deerfield Beach, Fla.)》2024,36(18):2309708
Insects can efficiently perform object motion detection via a specialized neural circuit, called an elementary motion detector (EMD). In contrast, conventional machine vision systems require significant computational resources for dynamic motion processing. Here, a fully memristive EMD (M-EMD) is presented that implements the Hassenstein–Reichardt (HR) correlator, a biological model of the EMD. The M-EMD consists of a simple Wye (Y) configuration, including a static resistor, a dynamic memristor, and a Mott memristor. The resistor and dynamic memristor introduce different signal delays, enabling spatio-temporal signal integration in the subsequent Mott memristor, resulting in a direction-selective response. In addition, a neuromorphic system is developed employing the M-EMDs to predict a lane-changing maneuver by vehicles on the road. The system achieved a high accuracy (> 87%) in predicting future lane-changing maneuvers on the Next Generation Simulation (NGSIM) dataset while reducing the computational cost by 92.9% compared to the conventional neuromorphic system without the M-EMD, suggesting its strong potential for edge-level computing. 相似文献
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Min Seok Yoo Kyung-Eun Byun Hyangsook Lee Min-Hyun Lee Junyoung Kwon Sang Won Kim Unyong Jeong Minsu Seol 《Advanced materials (Deerfield Beach, Fla.)》2024,36(15):2310282
Acquisition of defect-free transition metal dichalcogenides (TMDs) channels with clean heterojunctions is a critical issue in the production of TMD-based functional electronic devices. Conventional approaches have transferred TMD onto a target substrate, and then apply the typical device fabrication processes. Unfortunately, those processes cause physical and chemical defects in the TMD channels. Here, a novel synthetic process of TMD thin films, named confined interfacial chalcogenization (CIC) is proposed. In the proposed synthesis, a uniform TMDlayer is created at the Au/transition metal (TM) interface by diffusion of chalcogen through the upper Au layer and the reaction of chalcogen with the underlying TM. CIC allows for ultraclean heterojunctions with the metals, synthesis of various homo- and hetero-structured TMDs, and in situ TMD channel formation in the last stage of device fabrication. The mechanism of TMD growth is revealed by the TM-accelerated chalcogen diffusion, epitaxial growth of TMD on Au(111). We demonstrated a wafer-scale TMD-based vertical memristors which exhibit excellent statistical concordance in device performance enabled by the ultraclean heterojunctions and superior uniformity in thickness. CIC proposed in this study represents a breakthrough in in TMD-based electronic device fabrication and marking a substantial step toward practical next-generation integrated electronics. 相似文献
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Threshold Switching: Threshold Switching of Ag or Cu in Dielectrics: Materials,Mechanism, and Applications (Adv. Funct. Mater. 6/2018) 
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Hongrong Hu;Alexander Scholz;Christian Dolle;Alexander Zintler;Aina Quintilla;Yan Liu;Yushu Tang;Ben Breitung;Gabriel Cadilha Marques;Yolita M. Eggeler;Jasmin Aghassi-Hagmann; 《Advanced functional materials》2024,34(20):2302290
Printed electronics including large-area sensing, wearables, and bioelectronic systems are often limited to simple circuits and hence it remains a major challenge to efficiently store data and perform computational tasks. Memristors can be considered as ideal candidates for both purposes. Herein, an inkjet-printed memristor is demonstrated, which can serve as a digital information storage device, or as an artificial synapse for neuromorphic circuits. This is achieved by suitable manipulation of the ion species in the active layer of the device. For digital-type memristor operation resistive switching is dominated by cation movement after an initial electroforming step. It allows the device to be utilized as non-volatile digital memristor, which offers high endurance over 12 672 switching cycles and high uniformity at low operating voltages. To use the device as an electroforming-free, interface-based, analog-type memristor, anion migration is exploited which leads to volatile resistive switching. An important figure of merits such as short-term plasticity with close to biological synapse timescales is demonstrated, for facilitation (10–177 ms), augmentation (10s), and potentiation (35 s). Furthermore, the device is thoroughly studied regarding its metaplasticity for memory formation. Last but not least, the inkjet-printed artificial synapse shows non-linear signal integration and low-frequency filtering capabilities, which renders it a good candidate for neuromorphic computing architectures, such as reservoir computing. 相似文献
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Matthew Flynn-Hepford;John Lasseter;Ivan Kravchenko;Steven Randolph;Jong Keum;Bobby G. Sumpter;Stephen Jesse;Petro Maksymovych;A. Alec Talin;Matthew J. Marinella;Philip D. Rack;Anton V. Ievlev;Olga S. Ovchinnikova; 《Advanced Electronic Materials》2024,10(1):2300589
Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal-oxide-semiconductor (CMOS) architectures. In order to understand the driving mechanism in these oxide systems, tantalum oxide films are resistively switched by conductive atomic force microscopy (C-AFM), and subsequently imaged by kelvin probe force microscopy (KPFM) and spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). These workflows enable induction and analysis of the resistive switching mechanism as well as control over the resistively switched region of the film. In this work it is shown that the resistive switching mechanism is driven by both current and electric field effects. Reversible oxygen motion is enabled by applying low (<1 V) electric fields, while high electric fields generate irreversible breakdown of the material (>1 V). Fully understanding oxygen motion and electrical effects in bilayer oxide memristor systems is a fundamental step toward the adoption of memristors as a neuromorphic computing technology. 相似文献
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Zehui Peng Ziqiang Cheng Shanwu Ke Yongyue Xiao Zhaoer Ye Zikun Wang Tongyu Shi Cong Ye Xin Wen Paul K. Chu Xue-Feng Yu Jiahong Wang 《Advanced functional materials》2023,33(9):2211269
The development of advanced microelectronics requires new device architecture and multi-functionality. Low-dimensional material is considered as a powerful candidate to construct new devices. In this work, a flexible memristor is fabricated utilizing 2D cadmium phosphorus trichalcogenide nanosheets as the functional layer. The memristor exhibits excellent resistive switching performance under different radius and over 103 bending times. The device mechanism is systematically investigated, and the synaptic plasticity including paired-pulse facilitation and spiking timing-dependent plasticity are further observed. Furthermore, based on the linearly conductance modulation capacity of the flexible memristor, the applications on decimal operation are explored, that the addition, subtraction, multiplication, and division of decimal calculation are successfully achieved. These results demonstrate the potential of metal phosphorus trichalcogenide in novel flexible neuromorphic devices, which accelerate the application process of neuromorphic computing. 相似文献
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Alin Panca Julianna Panidi Hendrik Faber Spyros Stathopoulos Thomas D. Anthopoulos Themis Prodromakis 《Advanced functional materials》2023,33(20):2213762
Flexible electronics have seen extensive research over the past years due to their potential stretchability and adaptability to non-flat surfaces. They are key to realizing low-power sensors and circuits for wearable electronics and Internet of Things (IoT) applications. Semiconducting metal-oxides are a prime candidate for implementing flexible electronics as their conformal deposition methods lend themselves to the idiosyncrasies of non-rigid substrates. They are also a major component for the development of resistive memories (memristors) and as such their monolithic integration with thin film electronics has the potential to lead to novel all-metal-oxide devices combining memory and computing on a single node. This review focuses on exploring the recent advances across all these fronts starting from types of suitable substrates and their mechanical properties, different types of fabrication methods for thin film transistors and memristors applicable to flexible substrates (vacuum- or solution-based), applications and comparison with rigid substrates while additionally delving into matters associated with their monolithic integration. 相似文献