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61.
Purely gallium oxide-based memristors (GOMRs) show great potentials in resistive random-access-memory (RRAM) due to their chemical stability and resistive switching characteristics with Roff/Ron ratios up to 102; indeed, GOMRs with higher Roff/Ron ratios and more functionalities are more expected. In this study, ferromagnetic amorphous gallium oxide (a-GMO) films with a tunable two-level system of Mn dopants, i.e., Mn2+ and Mn3+ ions, are prepared by scalable polymer assisted deposition. The Pt/a-GMO/Pt memristors show a high Roff/Ron ratio of 103, at least one order of magnitude higher than those of previously reported purely GOMRs, thanks to the abundant oxygen vacancies (VOs)-induced low resistance state and Mn2+-enhanced high resistance state. Meanwhile, magnetic modulation (MM) is realized electrically in the a-GOMRs during the RS, through the tuning of bound magnetopolarons (BMPs) by bias voltage-induced VOs variations, which may be useful for quaternary information coding. Notably, the transition between Mn3+ and Mn2+ions is observed in the GOMRs, which is closely related to the variations of VO concentration and BMP amount, providing an in situ tool to probe the VO-induced RS and BMP-dependent MM. The results give insights to Mn-doped GOMRs and may be useful for design, fabrication, and testing of multifunctional high-performance RRAMs. 相似文献
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Bo Zhang Wenbo Lv Yonghai Guo Bo Wang Keliu Luo Wangda Li Jiangwei Cao 《Advanced Electronic Materials》2023,9(2):2200939
Spintronic devices can realize multi-state storage and be used to simulate artificial synapses or artificial neurons, which makes them have promising application prospect in the field of artificial neural networks (ANN). This work investigates the current-induced magnetization reversal in stacked (Ta/CoFeB/MgO)N structures and their application in ANN. It is demonstrated that the complete current-induced magnetization reversal with large intermediate transition region can be achieved in the sample with N = 2. The magneto-optical Kerr microscope imaging shows that the large transition region for the sample is ascribed to the “layer-by-layer” reversal, owing to the difference of the coercivity of two CoFeB layers. In addition, the simulation of artificial synapses and artificial neurons function based on current-induced magnetization reversal in the sample is also demonstrated. These results substantiate the stacked (Ta/CoFeB/MgO)N structures as a promising platform for realizing the multi-level state and artificial synapses function, and its potential application in the field of ANN. 相似文献
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Saisai Wang Rui Wang Yaxiong Cao Xiaohua Ma Hong Wang Yue Hao 《Advanced Electronic Materials》2023,9(4):2200972
With the rapid development of emerging artificial intelligence technology, brain–computer interfaces are gradually moving from science fiction to reality, which has broad application prospects in the field of intelligent robots. Looking for devices that can connect and communicate with living biological tissues is expected to realize brain–computer interfaces and biological integration interfaces. Brain-like neuromorphic devices based on memristors may have profound implications for bridging electronic neuromorphic and biological nervous systems. Ultra-low working voltage is required if memristors are to be connected directly to biological nerve signals. Therefore, inspired by the high-efficient computing and low power consumption of biological brain, memristors directly driven by the electrical signaling requirements of biological systems (bio-voltage) are not only meaningful for low power neuromorphic computing but also very suitable to facilitate the integrated interactions with living biological cells. Herein, attention is focused on a detailed analysis of a rich variety of physical mechanisms underlying the various switching behaviors of bio-voltage memristors. Next, the development of bio-voltage memristors, from simulating artificial synaptic and neuronal functions to broad application prospects based on neuromorphic computing and bio-electronic interfaces, is further reviewed. Furthermore, the challenges and the outlook of bio-voltage memristors over the research field are discussed. 相似文献
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Ioannis Vourkas Athanasios Batsos Georgios Ch. Sirakoulis 《International Journal of Circuit Theory and Applications》2015,43(5):553-565
The recent discovery of the ‘modern’ memristor has drawn great attention of both academia and industry. Given their favorable performance merits, memristors are expected to play a fundamental role in electronic industry. Modeling of memristive devices is essential for circuit design, and a number of Simulation Program with Integrated Circuit Emphasis (SPICE) models have already been introduced. The common problem in most models is that there is no threshold consideration; hence, only a few address the nonlinear nature of the device. This paper aims to present a SPICE implementation of a threshold‐type switching model of a voltage‐controlled memristive device that attributes the switching effect to a tunneling distance modulation. Threshold‐type switching is closer to the actual behavior of most experimentally realizable memristive systems, and our modeling approach addresses the issue of programming thresholds. Both the netlist and the simple schematic are provided, thus making it easy to comprehend and ready to be used. Compared with other modeling solutions, it involves significantly low‐complexity operation under an unlimited set of frequencies, and its simulation results are in good qualitative and quantitative agreement with the theoretical formulation. The proposed model is used to simulate an antiserial memristive switch, proving that it can be efficiently introduced in complex memristive circuits. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
66.
Gongchen Sun Zdenek Slouka Hsueh‐Chia Chang 《Small (Weinheim an der Bergstrasse, Germany)》2015,11(39):5206-5213
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Sebastian Nau Stefan Sax Emil J. W. List‐Kratochvil 《Advanced materials (Deerfield Beach, Fla.)》2014,26(16):2508-2513
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Conrad D. James Matthew J Marinella 《Advanced materials (Deerfield Beach, Fla.)》2014,26(26):4486-4490
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Daniel Wust Dietmar Fey 《International Journal of Parallel, Emergent and Distributed Systems》2018,33(4):387-407
AbstractThe carry propagation of arithmetic operations is one of the major shortcomings of common binary number encodings as the two’s complement. Signed-digit arithmetic allows the addition of two numbers without carry propagation and in asymptotically constant time in dependence of the word length, while at the same time requiring a digit representation with more than two states. With the advent of memristors, it has become possible to store multiple states within a single memory cell. This paper proposes an implementation of a general purpose CPU using signed-digit arithmetic by exploiting memristors in order to implement multi-value registers. The proposed model of the CPU is evaluated by the execution of various image processing algorithms. It is shown that a break-even point exists at which signed-digit algorithms outperform conventional binary arithmetic operations. Furthermore, simulation results prove that the memristor device lends itself to store signed-digit data efficiently. 相似文献