微桥结构铜膜杨氏模量和残余应力研究

采用MEMS(MicroelectromechanicalSystems)技术研制了铜 (Cu)膜微桥结构试样 ,应用陶瓷压条为承力单元 ,并与纳米压痕仪XP系统的Berkovich三棱锥压头相结合 ,解决了较宽Cu膜微桥加载问题。测量了微桥载荷与位移的关系 ,并结合微桥力学理论模型得到了Cu膜微桥的杨氏模量及残余应力 ,其值分别为 115 .2GPa和 19.3MPa ,与应用纳米压痕仪直接测得的带有Si基底的Cu膜杨氏模量 110± 1.6 7GPa相吻合。     

MICROBRIDGE TESTING OF YOUNG＇S MODULUS AND RESIDUAL STRESS OF NICKEL FILM ELECTROPLATED ON SILICON WAFER

Microbridge testing is used to measure the Young's modulus and residual stresses of metallic films. Nickel film microbridges with widths of several hundred microns are fabricated by Microelectromechanical Systems. In order to measure the mechanical properties of nickel film microbridges, special shaft structure is designed to solve the problem of getting the load-deflection curves of metal film microbridge by Nanoindenter XP system with normal Berkovich probe. Theoretical analysis of the microbridge load-deflection curve is proposed to evaluate the Young's modulus and residual stress of the films simultaneously. The calculated results based on the experimental measurements show that the average Young's modulus and residual stress are around 190GPa and 175MPa respectively, while the Young's modulus measured by Nano- hardness method on nickel film with silicon substrate is 186.8±7.34GPa.     

A micromechanical bridge-shaped voltage-controlled oscillator

A novel micromechanical bridge-shaped voltage-controlled oscillator with high Q value was fabricated. The core of this kind of oscillators is an electrothermally excited and piezoresistively detected micromechanical bridge resonator. Its resonance frequency can be adjusted by changing the DC voltage applied to the Wheatstone bridge. Theoretical analysis and experimental data show that its resonance frequency is linear with the square of the DC voltage. The linearity is better than 0.16% and the adjustable frequency range excels 17.15%.     

微桥试验法评价薄膜力学性能的研究

提出了弹性极限和小挠度极限的概念，对微桥在不同长度、厚度以及可能的弹性模量和残余应力范围内的变形行为进行了表征，提出基于弹性、小挠度极限来选择微桥尺度，并确定实验载荷及小挠度范围的方法，解决了微桥样品尺度以及载荷、挠度范围选择的问题。对两组挠度一载荷实验曲线的分析表明了该方法的可行性。     

微梁结构热偶微波功率传感器芯片的制作工艺

在微波技术研究中，微波功率是表征微波信号特性的一个重要参数，微波功率测量已成为电磁测量的重要部分，可应用于很多场合，如发射机输出功率（包括天线系统辐射的功率）和振荡器输出功率的测量，毫瓦计的校准，标准信号发生器的校准等。微波功率传感器是微波功率计探 头中的核心元件。微染结构热偶微波功率传感器芯片选择具有低电阻温度系数的Ta2N和高热电功率塞贝克系数的Si作为热 材料，利用半导体工艺和MEMS工艺制作，并最终研制成合格的芯片，芯片具有尺寸小，功耗低，灵敏度高，频带宽等特点，简要介绍了芯片的结构原理，并详细介绍了芯片的制作工艺。     

基于原子力显微镜的微桥机械特性测量

研究了基于原子力显微镜(AFM)的微桥机械特性的测量方法。通过微机电系统(MEMS)技术制备了可用静电力驱动进行机械振动的金属微桥。利用一套改进的商用AFM实验装置对测量方法进行了优化,并对微桥的共振频率进行了测量,所得实验结果与理论估算和仿真计算的结果基本一致。基于AFM的微桥机械特性的测量具有精度高和容易实现的特点,可作为测量平台扩展用于薄膜材料或微量液体的内耗、粘弹等性质的表征。     

微桥结构镍膜的弹性模量和残余应力研究

采用MEMS(MicroelectromechanicalSystems)技术研制了宽度在微米尺度的镍(Ni)膜微桥结构试样。采用纳米压痕仪(Nanoindenter)XP系统的楔形压头测量了微桥载荷与位移的关系,并结合微桥力学理论模型得到了Ni膜的弹性模量及残余应力,分别为190GPa和87MPa。与采用纳米压痕仪直接测得的带有硅(Si)基底的Ni膜弹性模量(186.8±7.5)GPa相符合。     

氮化硅支撑层薄膜的PECVD法制备及性能研究

采用等离子体增强化学气相沉积法(PECVD),在二氧化硅衬底(SiO2/Si(100))上成功制备了用于非致冷红外焦平面阵列微桥结构支撑层的氮化硅薄膜.采用X射线衍射(XRD)、傅里叶变换红外光谱(FTIR)及原子力显微镜(AFM)研究了薄膜的微观结构和表面形貌;分别采用台阶仪、薄膜应力分布测试仪和快速退火炉等手段测试了薄膜的厚度均匀性,应力大小和耐温性能等参数.结果表明,制备氮化硅薄膜为非晶态,含有少量的氢,主要表现为Si-N键合;薄膜表面平整、致密,厚度不均匀性小于5%,具有107Pa的较低压应力,耐温性能较好.     

TCR矫正对非制冷探测器微桥热导测试的影响

VO2薄膜的电阻温度系数TCR(Temperature Coefficient of Resistance,用α表示)随温度改变会发生显著变化。因此,以VO2薄膜为热敏材料的非制冷探测器微桥像元采用1/R—(-αI2)曲线来测量微桥热导时,如果使用固定TCR数值,必然会对测量结果带来偏差。本文采用TCR逐点矫正的方法测量了非制冷微桥热导,并分析了有效热导,实验中的最大热导矫正率达到20.08%。采用本方法可使非制冷探测器微桥的热导测试结果更为准确,也更具有实际应用价值。     

Ultralarge Pixel Array Photothermal Film based on 3D Self-Suspended Microbridge Structure for Infrared Scene Projection

Infrared emitter is highly desirable for applications in infrared imaging and infrared stealth technology. It is also a core device in infrared scene generation. Light-driven photothermal film has attracted considerable interest due to its outstanding photothermal properties and easy fabrication. However, the existing photothermal films suffer from low photothermal conversion efficiency (PCE) as well as small sizes. The improvement of the PCE is usually achieved at the expense of dynamic frame rate. Here, this work designs and fabricates a photothermal film based on 3D self-suspended microbridge structure. Silicon (Si) microbridges are introduced into each microstructure to manipulate the thermal conductivity of the films. By optimizing the parameters of the Si microbridges, the high PCE and fast frame rate are both achieved. Moreover, the 3D structure microbridge film is 4-inch in diameter, forming an ultralarge array with over 2200 × 2200 pixels. Finally, a high PCE infrared scene projector is realized based on this photothermal film. A visible image is projected on the film, the 3D-microstructured photothermal film absorbs the visible light and emits an infrared image same as the visible one with high resolution and fast frame rate due to the excellent photothermal properties.