无线网状网技术与应用

无线网状网(WMNs)由网状路由器节点和客户机节点组成,其中的网状路由器节点组成了无线网状网的网络骨干,其移动性很小。他们一起为无线网状网和其他常规无线网络的客户机节点提供网络的无线接入。WMNs技术结合了中心式控制的蜂窝网与分布式控制的无线自组织网的优点,可有效克服这两种技术的缺陷并显著提高无线网络的性能,已经成为下一代无线通信网络的研究热点之一。WMNs可为无线个域网、局域网、校园网、城域网的一系列应用提供高速无线宽带接入服务。虽然目前WMNs技术发展很快,但其协议栈各层仍存在许多有待研究的课题。首先简要介绍了无线网状网的结构与特点;随后重点分析了其主要的几个应用领域;最后探讨了WMNs各协议层的研究现状与关键技术,并分析了该技术存在的问题及未来的研究方向。     

棒状液晶分子相变问题的机械旋转模型研究

综述一种关于棒状液晶材料的分子结构与液晶相的相关关系的研究成果。介绍了有关液晶分子的机械旋转模型。该模型将液晶分子视作一种高速旋转的转子,通过分子参数计算,对液晶材料的相变温度和分子结构之间的关系给出了一种全新的解释。最新研究表明,含氟三苯液晶材料的分子结构中存在slim和fat现象,能够对液晶材料的相变进行合理解释。该模型能够通过简单的模型方法对新型液晶材料的分子设计与合成提供有用的信息。     

Extremes of random fields over arbitrary domains with application to concrete rupture stresses

To find the exact probability distribution of the global maximum or minimum of a random field within a bounded domain is a pending problem even for Gaussian fields. Except for very special examples of fields, recourse must be taken to approximate reasoning or asymptotic considerations to be judged with respect to accuracy by simulations. In this paper, the problem is addressed through a functional equation that leads to the definition of a class of distribution functions that depend solely on process or field characteristics and domain quantities that can be calculated explicitly. This distribution function class is studied for Gaussian processes in earlier works by the author and it has been obtained explicitly for Gaussian fields on rectangular domains in the plane. Simulation studies show that rather good predictions are obtained for sufficiently smooth wide band Gaussian processes and fields. In this paper, the distribution function is obtained in general for Gaussian fields over arbitrary bounded domains with piecewise continuous and differentiable boundaries, and as in earlier works the distribution function is tested against empirical distribution functions obtained by simulation of sample functions of a smooth approximately Gaussian field, herein called a broken line Hino field. For completeness this particular field type is defined in appendix a and appendix b. The paper concludes with a statistical application on data for plain concrete tensile strength.     

Surface electronic states in metal-porous silicon-silicon structures

The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of E_v+0.81 eV at the PS layer growing to 90 nm wide.     

Solution of large deformation contact problems with friction between Blatz-Ko hyperelastic bodies

The present paper is devoted to the analysis of the contact problems with Coulomb friction and large deformation between two hyperelastic bodies. One approach to separate the material nonlinearity and contact nonlinearity is presented. The total Lagrangian formulation is adopted to describe the geometrically nonlinear behavior. Nondifferentiable contact potentials are regularized by means of the augmented Lagrangian method. Numerical examples are carried out in two cases: rigid-deformable contact and deformable-deformable contact with large slips. The numerical results prove that the proposed approach is robust and efficient concerning numerical stability.     

Ni的添加对TiB2-CU基复合材料微观组织的影响

利用燃烧合成工艺原位合成了TiB2-Cu基复合材料，为了改善TiB2陶瓷和Cu基体的润湿性，将金属Ni作为合金化元素加入到TiB2-Cu复合材料。通过XRD，SEM，EPMA和TEM等检测手段对金属Ni的添加对TiB2-Cu基复合材料微观组织的影响进行了研究。结果表明，含Ni复合材料的金属粘结相的面间距比不含Ni时Cu的面间距均有不同程度的减小；Ni加入后，TiB2-Cu-Ni复合材料的组织较TiB2-Cu复合材料更加致密，但陶瓷颗粒尺寸却大于TiB2-Cu复合材料的颗粒尺寸；Ni的加入降低了复合材料的导热率和冷却速度，使得部分TiB2陶瓷颗粒有足够的时间长成棒状，同时造成TiB2陶瓷颗粒间形成更多的烧结颈；Ni的加入也改善了陶瓷与金属粘结相之间的润湿性，使陶瓷相与金属粘结相的界面结合牢固，看不到TiB2-Cu复合材料中界面脱开的现象。金属Ni的添加有利于改善TiB2-Cu基复合材料的微观组织，进而利于复合材料的致密化。     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

骨折内固定材料的研究进展

传统的骨折内固定材料在临床应用过程中出现了许多亟待解决的问题,如应力遮挡等,这些问题不但与材料的设计有关,而且与所采用的材料有密切关系.在概述骨折内固定材料的发展历史及目前所存在的主要问题的基础上,阐述了骨折内固定材料近些年来的新进展及今后的发展前景.     

Microstructure and properties of MoSi2–MoB and MoSi2–Mo5Si3 molybdenum silicides

MoSi₂-based intermetallics containing different volume fractions of MoB or Mo₅Si₃ were fabricated by hot-pressing MoSi₂, MoB, and Mo₅Si₃ powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo₅Si₃ caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 °C, except when the Mo₅Si₃ effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi₂ containing materials as consisting mostly of SiO₂. The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 °C when compared with pure MoSi₂. However, in contrast with the pure MoSi₂ material, oxidation at 1400 °C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo₅Si₃ containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo₅Si₃ additions to MoSi₂ tended to be detrimental for the mechanical and oxidative properties.     

Alleviation Effect of Lanthanum on Cadmium Stress in Seedling Hydroponic Culture of Kidney Bean and Corn

Since1970s,rare earths(RE)have been exten-sively used as micro-fertilizers for crops in China.Ithas already been proved that REcani mprove the pro-duction and quality of crops.However,there havebeen a fewinvestigations about using RE as regulatorin pollution ecology.For example,An et al[1]studiedthe effects of O3on wheat growth and the protectiveeffect of RE.Yan and Zhou et al[2,3]discussed theprotective effect of RE on plants under acid rainstress.Jia et al[4]and Hu et al[5]reported th…