位错芯重构缺陷对于Si中位错运动的影响

为了研究晶格常数不匹配的异质结SiGe/Si生长过程中低温缓冲层内缺陷对位错运动的影响,使用位错偶极子模型在Si晶体内建立了一对30°部分位错,和导致30°部分位错运动的弯结结构,以及位错芯重构缺陷(RD)与弯结组合而生成的弯结-RD结构.通过分子动力学模拟,使用Parrnello-Rahmman方法施加剪应力促使位错运动,得到了左右弯结-RD结构在迁移过程中的8种稳定构型,并且使用NEB方法和紧束缚势计算了纯弯结和弯结-RD迁移过程中势垒高度,发现弯结-RD的迁移能力要高于纯弯结结构.从模拟结果推断出,低温层生长技术中的Si低温缓冲层由于低温限制了重构缺陷的运动,减少其相遇发生湮灭的概率,从而使得更多的弯结能够与重构缺陷结合生成弯结-RD结构来提高30°部分位错的运动能力,由此释放异质结结构失配应力所需的位错密度会随之减小.     

平面型RTD及其MOBILE的设计与研制

鉴于已报道的平面共振遂穿二极管(PRTD)存在的缺点,文中提出了一种新的平面RTD器件结构.以n+ GaAs代替半绝缘GaAs衬底,利用硼离子注入产生的非晶化作为RTD器件的电隔离,成功设计研制平面型RTD和由其构成的单-双稳转换逻辑单元,此种结构可适用于以输出端作为公用端的所有电路.     

(Zn_(1/3)Nb_(2/3))~(4+)取代的BNT系无铅压电陶瓷性能

采用两步合成工艺,制备了新型Bi1/2Na1/2Ti1–x(Zn1/3Nb2/3)xO3(简称BNTZN—100x)系无铅压电陶瓷。研究了B位复合离子(Zn1/3Nb2/3)4+取代量对BNT陶瓷介电及压电性能的影响。结果表明:当0.005≤x≤0.020时,该体系陶瓷具有三方、四方共存的准同型相界(MPB)结构。在MPB附近,具有较佳的压电性能:当x为0.020时,d33为97pC/N,kt为0.47。εr-t曲线显示该体系材料具有明显的弥散相变特征。具有高kt值,低kp值;kt/kp较大,具有较大的各向异性,是一种适合高频下使用的优良超声换能材料。     

铝基板表面氧化铝层分子自组装活化法镀铜

采用分子自组装活化法在铝基板表面氧化铝上实施化学镀铜,镀层有很好的剥离强度,通过SEM、EDS和离子色谱对其进行了表征。研究了硅烷化时间与基体表面硅烷修饰量的关系,浸钯时间对基体表面钯含量的影响,硅烷化时间对镀层剥离强度的影响。通过正交试验得到最佳工艺条件:硅烷化处理用3-氨基丙基三乙氧基硅烷,质量分数为0.4%,硅烷化时间12h、温度50℃、浸钯溶液活化时间30min、30℃;得到的镀铜层剥离强度为1.00。     

Multicomponent Physical Vapor Deposited Films with Homogeneous Molecular Material Distribution Featuring Improved Resist Sensitivity

Each film preparation technique affects the physical properties of the resulting coating and thus defines its applicability in modern device construction. In this context solvent based spin coated and solvent‐free physical vapor deposited molecular glass photoresist films are systematically investigated for their dissolution behavior, sensitivity, and overall lithographic performance. These investigations demonstrate that the solvent‐free physical vapor deposition leads to a marked increase in sensitivity. This could be explained by the individual molecule by molecule deposition step producing a more homogeneous distribution of the multicomponent resist system, especially the photoacid generator. In addition, this assumption is supported by former published simulations focusing on aggregate formation within thin films. This work demonstrates that the lithographic sensitivity of multicomponent resist system is an intrinsic parameter to investigate molecular material distribution and indicates that the applied film preparation technique is crucial for the corresponding performance and applicability.     

掺Eu3+, Sm3+, Tb3+的TTFA配合物敏化发光效应的实验研究

为了研究稀土离子的α-噻吩甲酰三氟丙酮(α-thienyltrifluoroacetone,TTFA)配合物中敏化发光效应,对自行制备出的稀土离子Eu3+,Sm3+和Tb3+单掺TTFA配合物Eu(TTFA)3,Tb(TTFA)3,Sm(TTFA)3及3种稀土离子两两共掺的配合物的荧光光谱进行了分析,得出了稀土离子Eu3+,Sm3+,Tb3+与配体TTFA的敏化特性以及稀土离子Eu3+,Sm3+和Tb3+之间的敏化特性。Eu(TTFA)3,Tb(TTFA)3,Sm(TTFA)3及3种稀土离子共掺的配合物中,稀土离子Eu3+,Sm3+,Tb3+与配体TTFA及Eu3+,Sm3+,Tb3+之间有明显的敏化效应。结果表明,将其用于聚合物光纤放大器具有良好的发展前景。     

Peptide Programmed Hydrogels as Safe Sanctuary Microenvironments for Cell Transplantation

Cell transplantation is one of the most promising strategies for the minimally invasive treatment of a raft of injuries and diseases. However, a standing challenge to its efficacy is poor cell survival due to a lack of mechanical protection during administration and an unsupportive milieu thereafter. In response, a shear‐injectable nanoscaffold vector is engineered considering the three equal requirements of protection, support, and survival. Here, the programmed peptide assembly of tissue‐specific epitopes presents a safe sanctuary microenvironment for the transplantation of cells. For the first time, a mechanistic understanding of the multifactorial role of the nanoscaffold in promoting cell survival is presented, where initial cell survival is dependent on the fluid mechanic process of droplet formation rather than on shear rate. However, provided is the first report of the most critical component of a transplantation vector, distinguishing feigned biological support from mechanical properties from true ongoing biological support post transplantation. This is achieved via the presentation of amino acid constituents that significantly improve the efficacy of the vector compared to a biocompatible, yet inert analogue. Together, the peptide‐programmed hydrogels enable fundamental rules for the engineering of advanced treatment strategies with wide reaching implications for tissue repair and biofabrication.     

Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays

This paper presents recent developments that have been made in Leti Infrared Laboratory in the field of molecular beam epitaxy (MBE) growth and fabrication of medium wavelength and long wavelength infrared (MWIR and LWIR) HgCdTe devices. The techniques that lead to growth temperature and flux control are presented. Run to run composition reproducibility is investigated on runs of more than 15 consecutively grown layers. Etch pit density in the low 10⁵ cm⁻² and void density lower than 10³ cm⁻² are obtained routinely on CdZnTe substrates. The samples exhibit low n-type carrier concentration in the 10¹⁴ to 10¹⁵ cm⁻³ range and mobility in excess of 10⁵ cm²/Vs at 77 K for epilayers with 9.5 μm cut-off wavelength. LWIR diodes, fabricated with an-on-p homojunction process present dynamic resistance area products which reach values of 8 10³ Ωcm² for a biased voltage of −50 mV and a cutoff wavelength of 9.5 μm at 77 K. A 320 × 240 plane array with a 30 μm pitch operating at 77 K in the MWIR range has been developed using HgCdTe and CdTe layers MBE grown on a Germanium substrate. Mean NEDT value of 8.8 mK together with an operability of 99.94% is obtained. We fabricated MWIR two-color detectors by the superposition of layers of HgCdTe with different compositions and a mixed MESA and planar technology. These detectors are spatially coherent and can be independently addressed. Current voltage curves of 60 × 60 μm² photodiodes have breakdown voltage exceeding 800 mV for each diode. The cutoff wavelength at 77 K is 3.1 μm for the MWIR-1 and 5 μm for the MWIR-2.     

Unusual Twisting Phonons and Breathing Modes in Tube‐Terminated Phosphorene Nanoribbons and Their Effects on Thermal Conductivity

By studying tube‐terminated phosphorene nanoribbons (PNRs), it is found that unusual phonon and thermal properties can emerge from topologically new edges. The lattice dynamics calculations show that in tube‐terminated PNRs, the breaking of rotation symmetry suppresses the degeneracy of phonon modes, causing the emergence of twisting mode. An anomalous change of an out‐of‐plane acoustic mode to breathing modes with nonzero energy at the center of Brillouin zone occurs when the phosphorene sheet is converted into a tube‐terminated PNR. These unusual twisting and breathing modes provide a larger phase space for scattering phonons, thus explaining the low thermal conductivity of tube‐terminated PNRs revealed by molecular dynamics calculations. Due to the change in the stress field distribution caused by the tube edge, a nearly strain‐independent thermal conductivity in tube‐terminated PNRs is observed, which is in contrast to the apparent enhancement of thermal conductivity in pristine and dimer‐terminated PNRs under tensile strain. The work reveals intriguing phononic and thermal behaviors of tube‐terminated 2D materials.     

解理面预处理方法对二次外延的影响

利用超晶格解理面方法制备定位生长的InAs量子线.首先以分子束外延技术在OaAs衬底上生长GaAs/AlGaAs超晶格,然后将样品取出外延系统进行解理,对解理面进行预处理之后在(110)解理面上进行二次外延.实验结果显示超晶格解理面的预处理方法对二次外延有重大影响,其中择优腐蚀比自然氧化更有利于量子线的定位生长,过高温度的脱氧除气会导致解理面的GaAs部分出现坑状结构,表明(110)面上的Ga原子容易脱附.同时,Ga原子在(110)面上的迁移长度比较大,原子的择优扩散方向为[001]方向.