An experimental investigation into soft-pad grinding of wire-sawn silicon wafers

Silicon is the primary semiconductor material used to fabricate microchips. A series of processes are required to manufacture high-quality silicon wafers. Surface grinding is one of the processes used to flatten wire-sawn wafers. A major issue in grinding of wire-sawn wafers is reduction and elimination of wire-sawing induced waviness. Results of finite element analysis have shown that soft-pad grinding is very effective in reducing the waviness. This paper presents an experimental investigation into soft-pad grinding of wire-sawn silicon wafers. Wire-sawn wafers from a same silicon ingot were used for the study to ensure that these wafers have similar waviness. These wafers were ground using two different soft pads. As a comparison, some wafers were also ground on a rigid chuck. Effectiveness of soft-pad grinding in removing waviness has been clearly demonstrated.     

AI-Li/SiCp composites and Ti-AI alloy powders and coatings prepared by a plasma spray atomization (PSA) technique

There has been increasing use of Al-Li alloys in the aerospace industry, due mainly to the low density and high elastic modulus of this material. However, the problem of low ductility and fracture toughness of this material has limited its present application to only weight- and stiffness-critical components. Development of Al-Li/ceramic composites is currently being investigated to enhance the service capabilities of this material. The Ti-Al alloy is also of interest to aerospace-type applications, engine components in particular, due to its attractive high-temperature properties. Preparation of fine powders by plasma melting of composite feedstock and coatings formed by plasma spraying was carried out to examine the effect of spray parameters on the microstructure and properties of these materials. Characterization of the powders and coatings was performed using the scanning electron microscope and image analyzer. Examination of the plasma-sprayed powders and coatings has shown that in the Al-Li/SiC composite there is melting of both materials to form a single composite particle. The SiC reinforcement was in the submicron range and contributed to additional strengthening of the composite body, which was formed by a cold isostatic press and consolidated by hot extrusion or hot forging processes. The plasma-sprayed Ti-Al powder showed four categories of microstructures: featureless, dendritic, cellular, and martensite-like.     

硅黄铜铸件的渗漏缺陷分析

为了满足耐海水腐蚀、高导热率和承压能力要求,冷却器盖均采用硅黄铜制造。某厂在冷却器盖的生产过程中,铸件废品率高达60%,主要问题是铸件在水压测试中出现渗漏。分析了冷却器盖铸件的渗漏缺陷。结果表明:硅的加入量和浇注温度偏高,硅熔化不完全是导致此类铸件产生渗漏的主要原因。针对性地采取措施后,冷却器盖铸件的成品率大幅提高,达到了90%以上。     

碳化硅晶须双重加热合成的研究

双重加热法是低成本、大批量合成碳化硅晶须的新技术，合成温度低、合成时间短、生成率高。对以炭黑和二氧化硅微粉为原料、用双重加热法合成碳化硅晶须的工艺过程进行了研究。观察了不同合成时间、合成温度和催化剂条件下的碳化硅晶须，揭示出不同工艺参数对合成的碳化硅晶须的产出率，微观形貌、直径和长度范围的影响。结果表明，催化剂的使用可以加快反应速度，提高碳化硅晶须的生成率，合成过程为VLS。实验中初步得到的最佳经济工艺参数为：Fe2O3的用量为2％，合成时间为1．5h，合成温度为1250℃。此时的该工艺条件下碳化硅晶须的生成率可达80％，晶须平均直径为0．6μm，平均长度为30μm。     

晶闸管弧焊整流器的全集成化控制

在保留双反星形可控整流主电路优点的同时，根据手工焊和氩弧焊的工艺特点，对控制电路作了全集成化设计。介绍了稳弧电路、同步移相电路、触发电路及外特性控制电路的设计特点，对各单元电路进行了具体的分析。     

Intelligent cooling structure design of "Z-pins like" silicon rods to enhance the ablation resistance of C/C-ZrC-SiC composites above 2500 °C

In order to improve the ablation resistance of C/C-ZrC-SiC composites by reducing the damage of the protective oxide layer, novel "Z-pins like" silicon rods, which were designed and fabricated by liquid phase sintering, were utilised as a dissipative agent. The microstructure evolution and thermal dissipation behaviour were investigated after ablating above 2500 °C for 300 s. After the "Z-pins like" silicon rods were implanted, the anti-ablative property of the C/C-ZrC-SiC composites was drastically improved by the dissipative thermal protection mechanism. The linear ablation rate of the "Z-pins like" silicon rod-reinforced C/C-ZrC-SiC composite was -0.28 μm/s, which is 112.72% lower than the unmodified composite. Additionally, the actual ablative temperature dropped approximately 357 °C, which enabled abundant SiO₂ to remain in the ablation centre. Furthermore, a dense SiO₂-rich oxide layer with a low oxygen diffusion coefficient is formed that covers the entire ablative surface.     

常压CVD法制备氮氧化硅薄膜沉积特性的研究

采用常压化学气相沉积方法(atmospheric pressure chemical vapor deposition,APCVD)制备了氮氧化硅(Si—O—N)薄膜,研究了影响其沉积速率和生长模式的因素。在φ(NH_3):φ(SiH_4)=20:1,基板温度为650℃的条件下,当混合气体流量小于720ml/min时,薄膜的形成主要受气体扩散过程控制;当混合气体流量大于720 ml/min时,则主要受表面气相反应过程控制;混合气体流量为720 ml/min的条件下,氮氧化硅薄膜的沉积过程主要受基板表面的气相反应过程控制,薄膜沉积厚度与沉积时间成线性关系,反应速率为常数1640 nm/min,表面活化能为283 kJ/mol。通过SEM分析发现:氮氧化硅薄膜的形成方式符合三维成核模型,即反应初期Si,N,O等原子在基板表面相遇结合在一起形成原子团,一定数量的原子团构成临界核;反应中期临界核长大为岛状结构,岛不断长大,岛与岛之间相互接合形成通道网络结构;反应后期,原子不断填补网络空洞,最后成为连续薄膜。     

激光诱导二甲基二乙氧基硅烷气相合成碳化硅超细粉

本工作首次采用有机硅试剂二甲基二乙氧基硅烷为反应物，进行了激光导气相反应，制备出平均粒径为４０ｎｍ的非晶ＳｉＣ粉末，粉末中Ｃ／Ｓｉ比随反应气流量的变化而变化。非晶ＳｉＣ粉末在１８７３Ｋ，氮气中退火１ｈ后转变为β－ＳｉＣ及α－ＳｉＣ，同时，粉末中部分氧杂质及自由碳脱出粉末。     

Surface Pretreatments of Silicon Nitride for CVD Diamond Deposition

The efficiency of different surface pretreatments (four standard chemical etchings and four diamond powder abrasive procedures) on silicon nitride (Si₃N₄) substrates for chemical vapor deposition (CVD) of diamond has been systematically investigated. Blank Si₃N₄ samples were polished with colloidal silica (∼0.25 μm). Diamond nucleation and growth runs were conducted in a microwave plasma chemical vapor deposition apparatus for 10 min and 6 h, respectively. Superior results concerning nucleation density ( N _d∼ 10¹⁰ cm⁻² after 10 min), film uniformity, and grain size (below 2 μm after 6 h) were obtained for the mechanically microflawed samples, revealing that chemical etchings (hot and cold strong acids, molten base or CF₄ plasma) are not crucial for good CVD diamond quality on Si₃N₄.     

Silicon Nitride Derived from an Organometallic Polymeric Precursor: Preparation and Characterization

Partially crystalline Si₃N₄, with nanosized crystals and a specific surface area greater than 200 m²/g, is obtained by pyrolysis of a commercially available vinylic polysilane in a stream of anhydrous NH₃ to 1000°C. This polymer does not contain N initially. Crystallization to high-purity α-Si₃N₄ proceeds with additional heating above 1400°C under N₂. The changes in crystallinity, powder morphology, infrared spectra, and elemental compositions, for samples annealed from 1000° to 1600°C under N₂, are consistent with an amorphous-to-crystalline transformation. Although macroscopic consolidation and local densification occur at 1400°C, volatilization and accompanying weight loss limit bulk densification. The effect of temperature on specific surface area is examined and related to the sintering process. These results are applicable to pyrolysis, decomposition, and crystallization studies of ceramics synthesized by polymeric precursor routes.