Oxidation behavior of silicide coating on Ti3SiC2-based ceramic

A silicide coating was prepared on Ti₃SiC₂-based ceramic by pack cementation to improve the oxidation resistance of Ti₃SiC₂, which is a technologically important material for high temperature applications. The microstructure, phase composition and oxidation resistance of the coated sample were investigated. The results demonstrated that the silicide coating was mainly composed of TiSi₂ and SiC. A single layer of a mixture of SiO₂ and TiO₂ was formed on the surface of the coated sample during isothermal oxidation at 1100 °C and 1200 °C for 20h. Compared to Ti₃SiC₂, the parabolic rate constant of silicide coated Ti₃SiC₂ decreased by 2~3 orders of magnitude. Furthermore, the coated sample showed much better cyclic oxidation resistance than Ti₃SiC₂ during the cyclic oxidation at 1100 °C for 400 times. However, during the preparation of the coating, a number of fine cracks formed in the outer layer of the coating. When these cracks penetrated the whole coating during the cyclic oxidation, the oxidation rate was accelerated, which degraded the oxidation resistance. Electronic Publication     

等离子体氧化nc-Si/SiO_2多层膜的蓝光发射

报道了在等离子体增强化学气相沉积 (PECVD)系统中用交替淀积 a-Si对其进行原位等离子体氧化的方法制备了 a-Si∶H/ Si O2 多层膜。随着 a-Si∶H子层的厚度从 3 .8nm减小到 1 .5 nm,a-Si∶H/ Si O2 多层膜的光吸收边和光致发光 (PL )出现了蓝移。在晶化的 a-Si∶ H/ Si O2 多层膜中不仅观察到室温下的红光带 (80 0nm)的发光峰 ,而且还观察到蓝光发射 (4 2 5 nm) ,结合 Raman,TEM和 PL测试 ,对其原因作了简单的分析     

高压热处理对氧沉淀低温形核的影响

研究了外加高压(1GPa)下对450℃热处理硅片中氧沉淀行为的影响.透射电镜观察表明相对于大气压下热处理的样品,高压处理的样品会产生密度更高、尺寸更小的氧沉淀,表明高压有利于小直径氧沉淀的生成.电学性能测试表明,高压下处理的样品其热施主生成浓度和生成速率远远高于常压下处理的样品,这表明热施主与低温热处理过程中生成的高浓度氧沉淀核心有密切的关系.     

光激励和光检测微型硅谐振器研究

分析了光激励谐振器振动的检测问题，用调制激光束激励谐振器使其发生振动，并采用光学干涉的方法测量了这种微振动。     

Origin of visible photoluminescence from porous silicon as studied by Raman spectroscopy

In this paper we discuss the different models proposed to explain the visible luminescence in porous silicon (PS). We review our recent photoluminescence and Raman studies on PS as a function of different preparation conditions and isochronal thermal annealing. Our results can be explained by a hybrid model which incorporates both nanostructures for quantum confinement and silicon complexes (such as SiH _x and siloxene) and defects at Si/SiO₂ interfaces as luminescent centres.     

氢化非晶硅磷掺杂工艺条件的研究

本文对氧化非晶硅磷掺杂的工艺条件进行了研究，得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系，为非晶硅的有效掺杂和器件研究提供了依据。     

硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

Microstructure-related fracture toughness and fatigue crack growth behaviour in toughened, anhydride-cured epoxy resins

Fracture toughness and fatigue crack propagation (FCP) of plain and modified anhydride-cured epoxy resin (EP) were studied at ambient temperature. Liquid carboxyl-terminated acrylonitrile-butadiene (CTBN) and silicon (SI) rubber dispersions were used as tougheners for the EP. The morphology of the modified EP was characterized by dynamic mechanical analysis (DMA) and by scanning electron microscopy (SEM). The fracture toughness, K_c, of the compositions decreased with increasing deformation rate. K_c of the EP was slightly improved by CTBN addition and practically unaffected by incorporation of the SI dispersion when tests were performed at low cross-head speed, v. Both modifiers improved K_c at high v, and also the resistance to FCP, by shifting the curves to higher stress intensity factor ranges, ΔK, by comparison with the plain EP. It was established that both fracture and fatigue performance rely on the compliance, J_R, at the rubbery plateau, and thus on the apparent molecular mass between crosslinks, M_c. The failure mechanisms were less dependent upon the loading mode (fracture, fatigue), but differed basically for the various modifiers. Rubber-induced cavitation and shear yielding of the EP were dominant for CTBN, whereas crack bifurcation and branching controlled the cracking in SI-modified EP. The simultaneous use of both modifiers resulted in a synergistic effect for both the fracture toughness at high deformation rate and the FCP behavior.     

树脂热解炭制备碳化硅晶须

用自制的配合醛树脂热解和炭源，用ＳＩＯ２超细汾作原，根据碳热还原原理，利用常规加热和微波加热两种方式，分别制备了直径在纳米级的ＳｉＣ晶须，Ｘ射线衍射、透射电检测结果表明：制备工艺和条件对ＳｉＣ晶须的性质有较大的影响。     

碳热还原法制备氮化硅粉体的反应过程分析

对以碳热还原法制备氮化硅粉体的ＳｉＯ２－Ｃ－Ｎ２系统进行化学反应热力学和动力学的分析，从而发现在氮气氛不足的条件下，这一系统的反应产物将由氮化硅变为碳化硅；在氮气充足的情况下，随着温度的升高，生成物中碳化硅的量也会逐步增加，这一分析结果通过实验得到了验证。