炭/炭复合材料制造硅晶体生长坩埚初探

多晶硅用直拉法(CZ)或磁场直拉法(MCZ)拉制成单晶硅棒。晶体生长炉热场零件中的石墨发热体、坩埚等在机械应力和热应力的综合作用下发生变形或损坏造成失效,更换频繁。选用纯度高的炭纤维制成待制件的多孔坯体,经过增密、纯化处理制成炭／炭复合材料坩埚。试制的两体12″炭／炭复合材料坩埚进行了工业性试验。炭／炭复合材料机械强度高、耐热冲击性能和化学稳定性好,其使用寿命大大高于高纯石墨坩埚。两体的连接止口的氧化侵蚀限制了坩埚的使用寿命。单晶硅设备的大型化、炭／炭复合材料势必成为晶体生长炉热场零件的必选材料。     

Effect of Grain Boundaries on Thermal Conductivity of Silicon Carbide Ceramic at 5 to 1300 K

The thermal conductivity of a SiC ceramic was measured as 270 W·m⁻¹·K⁻¹ at room temperature. At low temperatures ( T < 25 K), the decrease in the conductivity was proportional to T ³ on a logarithmic scale, which indicated that the conductivity was controlled by boundaries. The calculated phonon mean free path in the ceramic increased with decreased temperature, but was limited to ∼4 μm, a length almost equal to the grain size, at temperatures below 30 K. We concluded that the thermal conductivity of the ceramic below 30 K was influenced significantly by grain boundaries and grain junctions.     

Role of Interfacial Carbon layer in the Thermal Diffusivity/Conductivity of Silicon Carbide Fiber-Reinforced Reaction-Bonded Silicon Nitride Matrix Composites

The role of an interfacial carbon coating in the heat conduction behavior of a uniaxial silicon carbide nitride was investigated. For such a composite without an interfacial carbon coating the values for the thermal conductivity transverse to the fiber direction agreed very well with the values calculated from composite theory using experimental data parallel to the fiber direction, regardless of the ambient atmosphere. However, for a composite made with carbon-coated fibers the experimental values for the thermal conductivity transverse to the fiber direction under vacuum at room temperature were about a factor of 2 lower than those calculated from composite theory assuming perfect interfacial thermal contact. This discrepancy was attributed to the formation of an interfacial gap, resulting from the thermal expansion mismatch between the fibers and the matrix in combination with the low adhesive strength of the carbon coating. In nitrogen or helium the thermal conductivity was found to be higher because of the contribution of gaseous conduction across the interfacial gap. On switching from vacuum to nitrogen a transient effect in the thermal diffusivity was observed, attributed to the diffusion-limited entry of the gas phase into the interfacial gap. These effects decreased with increasing temperature, due to gap closure, to be virtually absent at 1000°C.     

硅微阵列陀螺仪闭环驱动控制技术研究

为了进一步提高硅微阵列陀螺仪驱动模态的控制精度与稳定性,深入分析了硅微阵列陀螺仪的结构设计和闭环驱动控制技术。基于硅微阵列陀螺仪闭环驱动控制的特点,以现场可编程门阵列(FPGA)为核心控制平台,实现一种基于自激振荡原理的数字化闭环驱动电路。分析并建立了自激振荡与幅度控制的基本模型,基于Simulink实现了闭环自激驱动的仿真。实验结果表明,常温下驱动幅度控制精度达到9×10~(-5),并能有效跟踪驱动模态谐振频率。     

基于集成温度传感器的硅微陀螺仪数字化温度补偿研究

提出了一种基于集成温度传感器的硅微陀螺仪数字化温度补偿方法。首先,介绍了集成温度传感器的硅微陀螺仪基本结构原理,分析了硅微陀螺仪动力学方程以及温度变化对硅微陀螺仪谐振频率、品质因数、标度因数和零偏的影响。然后,设计了基于FPGA的硅微陀螺仪数字化补偿电路。最后,经过温度特性实验得到标度因数和零偏随温度变化曲线,建立了温度补偿模型,提出分段温度补偿方法。经过温度补偿后,标度因数和零偏的温度系数分别由316.66×10-6/℃和366.22°/(h·℃)减小为69.67×10-6/℃和115.25°/(h·℃),证明了补偿方法的正确性和可行性。     

Effects of Y2O3 and ZrO2 on the Densification of Si3N4-Zr(Y)O2 Composites

The effects of ZrO₂ and Y₂O₃ on the densification of hotpressed Si₃N₄-Zr(Y)O₂ composites have been studied. High density could not be obtained by the addition of pure or 3-mol%-Y₂O₃-doped ZrO₂ in this composite; however, nearly full density (>97%) could be obtained in Si₃N₄ using 6- and 8-mol%-Y₂O₃-doped ZrO₂. It is concluded that Y₂O₃ diffusing out from the added Zr(Y)O₂ promoted the densification and that ZrO₂ also had some role in the formation of an oxynitride glass.     

硅整流元件纯水冷却系统换热设备的化学清洗

介绍了硅整流元件的纯水冷却系统换热设备化学清洗中药剂的评定筛选原则。质量标准，清洗工艺等。并对其清洗效果加以评定。     

直接凝固注模成型Si_3N_4及SiC陶瓷──基本原理及工艺过程

直接凝固注模成型（ｄｉｒｅｃｔｃｏａｇｕｌａｔｉｏｎｃａｓｔｉｎｇ，ＤＣＣ）是一种崭新的（准）净尺寸陶瓷成型方法。本文报道了采用此法成型Ｓｉ_３Ｎ_４及ＳｉＣ陶瓷的基本原理和工艺过程。ＤＣＣ成型工艺过程为把高固相含量低粘度的陶瓷浆料浇注到无孔模具中，事先加入到浆料中的生物酶及化学物质通过改变浆料的ｐＨ或电解质浓度来改变浆料的胶体化学行为，从而使浆料原位凝固，得到有足够脱模强度的陶瓷坯体。ＤＣＣ成型的特点为坯体密度高（理论密度的５５％～７０％），坯体均匀，不用或只需少量的有机添加剂（少于１％），可成型大尺寸、复杂形状、高可靠性的陶瓷部件。