Theoretical studies of displacement deposition of nickel into porous silicon with ultrahigh aspect ratio

A model is developed to address the uniformity of displacement deposition of nickel inside porous silicon with an ultrahigh aspect ratio as high as 200. The nickel distribution is treated as a current distribution issue as in electrodeposition. It is shown that the deposition distribution along the pore depth exhibits a strong dependence on a polarization parameter ξ. High values of ξ correspond to mass transport limitations and lead to non-uniform distributions, whereas small ξ values, representing interfacial reaction control, produce uniform distributions. Non-uniform deposition primarily occurs at an initial stage in which the reaction is dominated by mass transfer. As the deposition process continues, the deposition rate drops to a low value, and the deposition uniformity shifts from Ni²⁺ mass transport limitations to its interfacial reaction control, leading to uniform Ni²⁺ concentration and deposition rate distributions. It is predicted that the non-uniformity at the initial stage could be remedied by increasing the bulk concentration of the nickel ions and decreasing the plating bath pH. In addition, the uniformity of the deposition distribution can be significantly improved by introducing inhibiting additive coumarin to the plating solution.     

In Situ Synthesis and Microstructures of Tungsten Carbide-Nanoparticle-Reinforced Silicon Nitride-Matrix Composites

A W₂C-nanoparticle-reinforced Si₃N₄-matrix composite was fabricated by sintering porous Si₃N₄ that had been infiltrated with a tungsten solution. During the sintering procedure, nanometer-sized W₂C particles grew in situ from the reaction between the tungsten and carbon sources considered to originate mainly from residual binder. The W₂C particles resided in the grain-boundary junctions of the Si₃N₄, had an average diameter of ∼60 nm, and were polyhedral in shape. Because the residual carbon, which normally would obstruct sintering, reacted with the tungsten to form W₂C particles in the composite, the sinterability of the Si₃N₄ was improved, and a W₂C–Si₃N₄ composite with almost full density was obtained. The flexural strength of the W₂C–Si₃N₄ composite was 1212 MPa, ∼34% higher than that of standard sintered Si₃N₄.     

合成二氧化硅对硅橡胶性能的影响

介绍了合成二氧化硅及硅橡胶的结构性质，探究了二氧化硅的结构性质对硅橡胶补强性能的影响，指出了二氧化硅颗粒的大小、形态、聚结状态、表面性质和与高分子硅氧烷之间的相互作用是影响二氧化硅对硅橡胶补强性能的最主要的因素，并用实验对硅橡胶的硬度、拉伸强度、300％定伸应力、扯断伸长率、撕裂强度、压缩永久变形等物理性能进行测定，结果表明：BET比表面积180～200m^2／g，孔隙度（吸油量）为3.0～3.2mL／g，平均粒径为8～10岬的沉淀法白炭黑对硅橡胶具有很好的补强效果。     

Electrochemical ferrate generation for waste water treatment using cast irons with high silicon contents

This paper deals with the electrochemical preparation of ferrate in 15 M NaOH media, with a view to treatment of waste waters. Grey cast irons with high silicon contents were shown to allow current yields in the range 20–40% depending on the applied current density, up to 34 mA cm^–2. Ferrate solutions with contents up to 0.08 M could be produced in a divided cell of simple design, and provided with flat or packed-bed electrodes. Deactivation of the anode surface was shown to be of moderate significance for hour-long runs. The ferrate produced was tested for treatment of industrial liquid wastes: coagulation efficiency of the suspended matter was comparable with that of an electrocoagulation process with sacrificial Al anodes. The potential of waste water treatment by addition of ferrate is discussed.     

Deep oxidation of aqueous organics over a silicon carbide-activated carbon supported platinum–ruthenium bimetallic catalyst

In previous work, we developed a highly active bimetallic platinum–ruthenium catalyst supported on a very high surface area activated carbon substrate. In fixed bed reactors, this catalyst proved capable of the continuous long-term deep oxidation of a variety of aqueous organic contaminants associated with spacecraft wastewater streams at 121 °C. This work was extended to the mineralization of more typical environmental contaminants, including halocarbons and aromatics. The primary weakness of this catalyst was the tendency toward relatively high rates of chemical decomposition. To overcome this limitation, methods were developed for the production of a silicon carbide coating over the surface of the activated carbon, yielding a reasonable trade-off between increasing resilience and decreasing surface area. Here we report the catalytic decomposition of dissolved organic contaminants at 130 °C using this silicon carbide/activated carbon supported bimetallic catalyst.     

烧结助剂对氮化硅陶瓷显微结构和性能的影响

氮化硅中氮原子和硅原子的自扩散系数很低，致密化所必需的扩散速度和烧结驱动力都很小，在烧结过程中需采用烧结助剂。烧结助剂是影响氮化硅陶瓷的显微结构和性能的关键因素之一。有效的烧结助剂不但可以改善氮化硅陶瓷的显微结构，而且可以提高氮化硅陶瓷的高温性能和抗氧化性能。     

Characterization of Precursor-Derived Silicon-Carbon-Nitrogen Ceramics after Creep Testing

Precursor-derived Si-C-N ceramics after creep testing in air were characterized using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). XRD analysis showed that the crept Si-C-N ceramics were covered by an α-cristobalite layer. TEM observations revealed that the precipitated nanocrystallites in the crept Si-C-N ceramics were β-SiC. Between α-cristobalite and crept Si-C-N ceramic, there was an intermediate zone in which Si₂N₂O nanocrystallites were distributed homogeneously. Moreover, Si₂N₂O nanocrystallites were often found covering the surface of nanosized gas channels in the crept Si-C-N ceramics, where no α-cristobalite phase was detected. Based on these observations, a two-step oxidation mechanism of Si-C-N ceramics during creep testing in air was proposed.     

Si3N4陶瓷材料的高温氧化理论及其抗氧化研究现状

从热力学、动力学和整体控速过程探讨了氮化硅陶瓷材料高温氧化理论和氧化性质，阐述了表面改性技术对氮化硅抗氧化性能的影响．并对表面改性提高氮化硅抗氧化性能进行了展望。     

金属铝诱导法低温制备多晶硅薄膜

以氢气稀释的硅烷（SiH4）和硼烷（B2H6）为气源,利用等离子体增强化学气相沉积法（PECVD）制备出p型a-Si薄膜.采用铝诱导晶化技术对不同厚度的铝膜对a-Si薄膜晶化的影响进行了研究.实验中发现,铝膜溅射为10 s的非晶硅薄膜样品在450℃下退火10 min后,p型a-Si结构仍为非晶态,铝膜溅射为20 s的非晶硅薄膜在450℃下退火20 min后,p型a-Si薄膜开始晶化为polySi薄膜,并且铝膜厚度越厚,则a-Si薄膜晶化程度越强.     

半透明氮化硅陶瓷的放电等离子烧结制备及性能

用放电等离子烧结(spark plasma sintering,SPS)技术,以质量分数(下同)为9%氮化铝(A1N),3%氧化镁(MgO)为烧结助剂,在1850℃烧结5min,成功制备了半透明氮化硅(Si3N4)陶瓷.半透明Si3N4陶瓷在中红外波段表现出良好的透过率,最大透过率为66.4%.SPS的快速致密化过程保证了烧结体具有良好的晶体结构,有利于提高透过率.SPS快速的烧结过程和A1N和MgO的加入能够有效抑制烧结过程中Si3N4陶瓷由α相向β相的转变,是制备光学性能良好的Si3N4陶瓷的关键.报道了半透明Si3N4陶瓷的其他性能.光学性能与其他性能的结合,势必大大拓宽Si3N4陶瓷的应用领域.