Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells

Growth of hydrogenated amorphous silicon in a doping inversed silicon heterojunction solar cell (n-a-Si:H/i-a-Si:H/p-c-Si) interface was investigated by High Resolution Transmission Electron Microscopy (HR-TEM), Spectroscopic Ellipsometry (SE), Fourier Transform Infrared Attenuated Total Reflection spectroscopy (FTIR-ATR) and current–voltage (I–V) measurements. Effective Medium Approximation (EMA) to the SE was used to describe breakage of epi-Si and evolution of mixture of microcrystalline and amorphous phases. Fabricated silicon heterojunction solar cells were characterized by dark and light I–V measurements at Standard Test Conditions. By improving the cleaning and deposition conditions, solar cells with 9.2% efficiency over 72 cm² total active area were obtained on p-type c-Si wafers.     

The light stability of microcrystalline silicon thin films deposited by VHF-PECVD method

Microcrystalline silicon thin film is deposited under different conditions by plasma enhanced chemical vapor deposition. The light stability with different crystallinity and grain size is studied, and the growth mechanism is analyzed using the scaling behavior of roughening surface evolution. Degradation of photoconductivity mainly depends on crystallinity and grain size, but fundamentally, on the growth mechanism. Materials with high crystallinity and large grain size are more stable under light soaking. With the increasing of deposition pressure and input power, growth process transfers to zero diffusion limit growth mechanism, and films deposited present less grain size and poor light stability.     

Surface modification of Ti64-Alloy with silver silicon nitride thin films

Ti6Al4V (Ti64) alloys is an alpha-beta titanium alloy with good corrosion resistance, high strength-to-weight ratio, excellent physiochemical stability and good biocompatibility. However, Ti64 alloy loses its biocompatibility when it is introduced into human tissues due to possible toxic of Vanadium (V) and Aluminum (Al) ion release. Thus, modification using silver silicon nitride films onto Ti64 via magnetron sputtering technique was proposed. In this study, a set of experimental depositing AgSiN films on Ti64 alloys using different bias voltage (0, ?75, ?150 and ?200?V) were fabricated. The surface characterization and mechanical performance of the thin films with respect to bias voltage were studied using scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction (XRD), nanoindentation and scratch test. Meanwhile, the biological function of the films was tested through wettability and antibacterial tests. According to the results, all thin films showed similar morphology with the highest adhesion strength (596?mN) was obtained for AgSiN thin film deposited at ?75?V. The hardness (5.5?GPa) and elastic modulus (211.0?GPa) of sample deposited at ?150?V showed an improvement for about 50% compared to the Ti64 substrate (H?=?2.75, E?=?113.8). The lowest compressive residual stress 0.06?GPa was noted for samples that have highest adhesion strength and highest thickness. In terms of biological functionality, all films showed hydrophilic property with wetting angle observed were below 90°. An inhibition zone area that observed on Bulkholderia pseudomallei (B.Psudomallei) and Escherichia coli (E.coli) were 7 and 10?mm respectively, which proved the AgSiN films as a promising candidate to be used in antibacterial applications.     

Lithium silicon sulfide as an anode material in all-solid-state lithium batteries

The electrochemical properties of Li₂SiS₃ were investigated in a solid electrolyte. Li₂SiS₃ was converted to elemental Si, and the resultant Si was formed into Si-Li alloy in the reduction process; however, the reverse reaction was not completed due to the loss of electronic conduction upon reoxidation. FeS was dispersed as a conductive additive in Li₂SiS₃ films by pulsed laser deposition (PLD). The addition allowed successive reactions to proceed at a large capacity with small capacity-fading during the cycling process in spite of the small FeS fraction. This result indicates that Li₂SiS₃ + FeS thin film is a promising anode for solid-state lithium batteries.     

On-chip silicon light source: from photonics to plasmonics

Practical silicon photonic interconnects become possible nowadays after the realization of the practical silicon light sources,where the hybrid integrations of Ⅲ-Ⅴ semiconductors and silicon by bonding...     

High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma

Inductively coupled plasma (ICP) generated at 13.56 MHz has been employed for high-rate deposition of device-quality hydrogenated amorphous silicon (a-Si:H). It has been shown that an increase in the flow rate of a monosilane gas enhances the generation rate of deposition precursors, while the ion flux decreases and becomes saturated. The defect density reaches the minimum at a deposition rate of 2.3 nm/s. It has also been demonstrated that even at deposition rates around 4 nm/s, a-Si:H deposited at 150°C exhibits a subgap defect density lower than 6×10¹⁶ cm⁻³ after 12 h AM1 (100 mW/cm²) light soaking.     

High-quality narrow gap (1.52 eV) a-Si:H with improved stability fabricated by excited inert gas treatment

Narrow band gap (1.5 eV) hydrogenated amorphous silicon (a-Si:H) were fabricated by a chemical annealing technique using noble gases (Ar, He, Ne). Although hydrogen content in the film was reduced to 1 atm% and band gap was decreased to 1.52 eV, high photoconductivity and large mobility–lifetime products were maintained and no marked changes in the short-range structure was found. Using these narrow band gap a-Si:H for photoactive layer in n-i-p solar cells, reasonable photovoltaic performances were obtained, i.e., open-circuit voltage of 0.71 V and fill factor of 57%. Also enhanced red response was observed with the 1.58 eV band gap i-layer solar cell prepared on textured substrate.     

Oxidation Resistance Evaluation of Silicon Carbide Ceramics with Various Additives

Five silicon carbide ceramics with various additives were evaluated for oxidation resistance at 1300°C in flowing dry and wet air. In the dry atmosphere, the oxidation of the five samples was diffusion-controlled, and in wet atmosphere they exhibited a linear relation beween weight gain by oxidation and water vapor content. Water vapor in the atmosphere strongly accelerated oxidation. The influence of oxidation on room-temperature strength was complex, but the samples were not as affected by oxidation.     

热轧硅钢片烫辊工艺的探讨

烫辊是热轧硅钢片生产不可避免的环节，就传统烫辊工艺的不足与改进后的烫辊工艺进行了对比探讨。     

低碳低硅钢连铸过程的非金属夹杂物研究

采用扫描电镜，金相法对湘钢连铸坯生产过程中非金属夹杂物的数量，类型，组成与分布等进行了研究，为降低连铸坯中夹杂物提供了依据。