Advanced Characterization and Optimization of NiOx:Cu-SAM Hole-Transporting Bi-Layer for 23.4% Efficient Monolithic Cu(In,Ga)Se2-Perovskite Tandem Solar Cells

The performance of five hole-transporting layers (HTLs) is investigated in both single-junction perovskite and Cu(In, Ga)Se₂ (CIGSe)-perovskite tandem solar cells: nickel oxide (NiO_x,), copper-doped nickel oxide (NiO_x:Cu), NiO_x+SAM, NiO_x:Cu+SAM, and SAM, where SAM is the [2-(3,-6Dimethoxy-9H-carbazol-9yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer. The performance of the devices is correlated to the charge-carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time-resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr-SPV), and X-ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi-Fermi level splitting to open-circuit (QFLS-V_oc) deficit is detected for the NiO_x-based devices, attributed to electron trapping and poor hole extraction at the NiO_x-perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiO_x with 2% Cu and passivating its surface with MeO-2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non-radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge-carrier dynamics, NiO_x:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe-perovskite tandem devices, enabling a power-conversion efficiency (PCE) of 23.4%, V_oc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent V_oc and FF losses.     

移频激发差分拉曼光谱仪的多波长光源设计

拉曼光谱检测常常受到荧光的干扰,影响了该技术的推广应用。移频激发差分拉曼光谱方法(SERDS方法)已被证明是一种有效的荧光抑制方法。SERDS实现荧光抑制的关键在于其特殊的激光光源,不仅要求其输出多个相近的波长,而且要求输出的激光功率较高、光谱线宽窄。采用Littrow光栅外腔半导体激光器原理设计实现了一种低成本、便携式的激光光源,可以在15nm的调谐范围内输出多个波长,光谱线宽小于0.2nm,输出功率可达80mW,适合用作移频激发差分拉曼光谱方法的多波长光源,实现拉曼光谱检测中对荧光干扰的抑制。     

Reversible Amorphous‐to‐Amorphous Transitions in Chalcogenide Films: Correlating Changes in Structure and Optical Properties

Structural transitions in materials are accompanied by appreciable and exploitable changes in physical‐chemical properties. Whereas reversible optically‐driven atomistic changes in crystal‐to‐amorphous transitions are generally known and exploited in applications, the nature of the corresponding polyamorphic transitions between two structurally distinct meta‐stable amorphous phases is an unexplored theme. Direct experimental evidence is reported for the nature of the atomistic changes during fully reversible amorphous‐to‐amorphous switching between two individual states in the non‐crystalline As₅₀Se₅₀ films prepared by pulsed‐laser deposition and consequent changes in optical properties. Combination of surface sensitive X‐ray photoelectron spectroscopy and spectroscopic ellipsometry show that the near‐bandgap energy illumination and annealing induce reversible switching in the material's structure by local bonding rearrangements. This is accompanied by switching in refractive index between two well‐defined states. Exploiting the pluralism of distinct structural states in a disordered solid can provide new insights into the data storage in emerging optical memory and photonic applications.     

FTIR研究红外光曝露对于高血糖大鼠的影响

研究红外场曝露对于高血糖疾病模型大鼠的影响.主要利用红外场曝露高血糖大鼠30天,然后通过考查红外场曝露对于高血糖大鼠血液组织红外光谱特征的影响来研究红外线曝露对于大鼠血糖水平产生的影响,研究结果认为红外场曝露有助于高血糖大鼠血糖水平的恢复,并进一步通过红外光谱数据的二阶导数谱的分析探讨了红外场曝露对于大鼠血糖水平产生影响的机理.     

r面蓝宝石衬底上生长的a面ZnO巨大的平面内光学各向异性

我们在室温下测量采用反射差分光谱测量了r面蓝宝石衬底上生长的a面氧化锌的平面内光学各向异性。由于a面氧化锌为C2v对称性,我们观察到在平行c轴的方向和垂直于c轴的方向存在巨大的平面内光学各向异性。在带隙处观察到了非常尖锐的跃迁振荡信号,这个信号来源于偏振相关的能带移动。激子跃迁产生了尖锐的线形。谱线的拟合和微分光谱给出了偏振相关的带隙能量。垂直于c轴和平行于c轴方向上的各向异性应变产生了巨大的平面内光学各向异性。介电函数模型给出了拟合的结果,估计了带隙附近的偏振度。     

用于实时分析的光谱学方法

针对目前用于实时成分分析的几种光谱学方法 (傅立叶变换红外光谱、傅立叶变换拉曼光谱、近红外光谱 ) ,对这些能够进行实时分析的光谱方法的基本原理和仪器结构进行了说明 ,并以其在石油化工领域中的应用为例 ,比较了各自的特点和使用效果 ,从而得出 ,近红外光谱方法有着适于在线分析应用的独特优点。目前外光谱仪作为用于工业现场的专用在线分析测量系统 ,正在向集成化与小型化方向发展     

PECVD沉积SiOP电介质膜及其XPS研究

采用等离子体增强化学气相沉积(PECVD)技术沉积含P电介质薄膜,用于无杂质空穴扩散(IFVD)技术中InGaAsP-InP MQW结构中新的包封层,替代传统的SiO2层。经X射线光电子谱(XPS)研究证明,该膜就是SiOP结构。快速退火(RTA)研究表明,该膜结构基本稳定,但膜中P原子存在明显扩散,它增强了InPMQW结构中In原子的外扩,却抑制了Ga原子的外扩。这些都明显区别于常规SiO2膜的性质。     

元素俘获测井在库车深层致密砂岩中的应用

库车前陆盆地深层砂岩气藏表现为低孔隙度特低渗透率特征,由于钻井取心少,评价复杂岩性储层存在困难。元素俘获测井(ECS)利用矿物成分获取地层岩性和骨架参数,能够指导评价复杂岩性地层。利用元素俘获测井获取的元素干重百分比,建立反演矿物模型求取矿物的含量。用ECS测井资料获得的矿物含量计算地层变骨架密度(地层骨架密度随深度变化而变化),再计算地层孔隙度,其孔隙度结果与岩心孔隙度基本吻合,验证了ECS测井技术求取地层孔隙度方法的可靠性。对库车前陆盆地深层7口井已知数据的验证,提高了地层孔隙度的解释精度。实践表明,ECS测井技术用于求取塔里木盆地库车深层致密砂岩地层中的储层参数,取得了很好的应用效果。     

Potential of fluorescence spectroscopy in detection of low-levels of gluten in flour: A preliminary study

Celiac disease is caused due to the ingestion of gluten containing food products. Eating gluten free diet is only way to avoid its occurrence. Gluten free products may get contaminated during the handling and processing operation which leads to the adverse impact on the gluten intolerant patients. Three different gluten free mixes were adulterated with two different types of wheat flours to get the gluten concentration in the range of 0–5 % by making 94 sample combinations. The obtained fluorescence spectra from these samples were transformed using multiplicative scatter correction (MSC) pre-processing to develop partial least square regression (PLSR) model for the prediction of low-levels of gluten. The obtained results showed a high value of 0.90 correlation coefficient (R²) with 0.46 % root mean square error of cross-validation (RMSECV). The calibration and prediction models also showed the same R² with root mean square error of calibration (RMSEC) and prediction (RMSEP) of 0.41 % and 0.46 % respectively. Hence fluorescence spectroscopy can be used to estimate the level of adulteration which is helpful for developing a sensor for determination of low-levels of gluten as a rapid and non-invasive method in food applications.     

Properties of InAs/(Ga,In)Sb strained layer superlattices grown on the {111} orientations

Following the proposal of the extreme type-II InAs/(Ga,In)Sb strained layer superlattice system by Mailhiot and Smith in 1987 for long wavelength infrared detection, a number of groups have experimentally investigated (100) oriented InAs/(Ga,In)Sb strained layer superlattices and demonstrated that these structures can possess energy gaps in the 8–12 μm range with absorption coefficients comparable to HgCdTe. However, a number of advantages are predicted if these structures are grown on the {111} orientations. In this paper, we present details of our investigation of the growth of InAs/GaSb heterostructures and InAs/(Ga,In)Sb strained layer superlattices on the (111)A and (111)B orientations by molecular beam epitaxy, compared to growth on the (100) orientation. Heterojunction growth and incorporation rates of Sb (As) into InAs (GaSb) on (111)A, (111)B, and (100) orientations have been assessed and implications for growth and optical properties of InAs/(Ga,In)SB strained layer superlattices are discussed. GaSb/InAs and InAs/GaSb interfaces on the (111)B orientation are investigated by x-ray photoelectron spectroscopy, and the structural quality of InAs/(Ga,In)Sb strained layer superlattices are investigated by x-ray diffraction.