AI-Li/SiCp composites and Ti-AI alloy powders and coatings prepared by a plasma spray atomization (PSA) technique

There has been increasing use of Al-Li alloys in the aerospace industry, due mainly to the low density and high elastic modulus of this material. However, the problem of low ductility and fracture toughness of this material has limited its present application to only weight- and stiffness-critical components. Development of Al-Li/ceramic composites is currently being investigated to enhance the service capabilities of this material. The Ti-Al alloy is also of interest to aerospace-type applications, engine components in particular, due to its attractive high-temperature properties. Preparation of fine powders by plasma melting of composite feedstock and coatings formed by plasma spraying was carried out to examine the effect of spray parameters on the microstructure and properties of these materials. Characterization of the powders and coatings was performed using the scanning electron microscope and image analyzer. Examination of the plasma-sprayed powders and coatings has shown that in the Al-Li/SiC composite there is melting of both materials to form a single composite particle. The SiC reinforcement was in the submicron range and contributed to additional strengthening of the composite body, which was formed by a cold isostatic press and consolidated by hot extrusion or hot forging processes. The plasma-sprayed Ti-Al powder showed four categories of microstructures: featureless, dendritic, cellular, and martensite-like.     

晶闸管弧焊整流器的全集成化控制

在保留双反星形可控整流主电路优点的同时，根据手工焊和氩弧焊的工艺特点，对控制电路作了全集成化设计。介绍了稳弧电路、同步移相电路、触发电路及外特性控制电路的设计特点，对各单元电路进行了具体的分析。     

激光诱导二甲基二乙氧基硅烷气相合成碳化硅超细粉

本工作首次采用有机硅试剂二甲基二乙氧基硅烷为反应物，进行了激光导气相反应，制备出平均粒径为４０ｎｍ的非晶ＳｉＣ粉末，粉末中Ｃ／Ｓｉ比随反应气流量的变化而变化。非晶ＳｉＣ粉末在１８７３Ｋ，氮气中退火１ｈ后转变为β－ＳｉＣ及α－ＳｉＣ，同时，粉末中部分氧杂质及自由碳脱出粉末。     

甲基偶氮四唑热稳定性和热分解机理的量子化学研究

采用量子化学方法全优化计算了1—甲基—5—偶氮四唑(1—MAT)和2—甲基—5—偶氮四唑(2—MAT)热分解反应位能曲线，探讨了热稳定性和分解机理。热分解活化能计算值分别为245．9，183．2k／mo1，静态分子结构和动态分解性质都显示出1—MAT比2—MAT有更好的热稳定性。裂解优先以开环方式发生。     

Surface Pretreatments of Silicon Nitride for CVD Diamond Deposition

The efficiency of different surface pretreatments (four standard chemical etchings and four diamond powder abrasive procedures) on silicon nitride (Si₃N₄) substrates for chemical vapor deposition (CVD) of diamond has been systematically investigated. Blank Si₃N₄ samples were polished with colloidal silica (∼0.25 μm). Diamond nucleation and growth runs were conducted in a microwave plasma chemical vapor deposition apparatus for 10 min and 6 h, respectively. Superior results concerning nucleation density ( N _d∼ 10¹⁰ cm⁻² after 10 min), film uniformity, and grain size (below 2 μm after 6 h) were obtained for the mechanically microflawed samples, revealing that chemical etchings (hot and cold strong acids, molten base or CF₄ plasma) are not crucial for good CVD diamond quality on Si₃N₄.     

Silicon Nitride Derived from an Organometallic Polymeric Precursor: Preparation and Characterization

Partially crystalline Si₃N₄, with nanosized crystals and a specific surface area greater than 200 m²/g, is obtained by pyrolysis of a commercially available vinylic polysilane in a stream of anhydrous NH₃ to 1000°C. This polymer does not contain N initially. Crystallization to high-purity α-Si₃N₄ proceeds with additional heating above 1400°C under N₂. The changes in crystallinity, powder morphology, infrared spectra, and elemental compositions, for samples annealed from 1000° to 1600°C under N₂, are consistent with an amorphous-to-crystalline transformation. Although macroscopic consolidation and local densification occur at 1400°C, volatilization and accompanying weight loss limit bulk densification. The effect of temperature on specific surface area is examined and related to the sintering process. These results are applicable to pyrolysis, decomposition, and crystallization studies of ceramics synthesized by polymeric precursor routes.     

Hydroxyls nests in defective silicalites and strained structures derived upon dehydroxylation: vibrational properties and theoretical modelling

Defective silicalite, an efficient and selective catalyst in the gas phase Beckmann rearrangement reaction, has been characterised by infrared spectroscopy and by molecular modelling techniques. We report a detailed IR study on the effect of outgassing treatments at increasing temperature on silanols bands and on framework modes. The effect of a temperature decrease up to 100 K (during the IR measurement) on the H-bonding interactions has also been investigated. The interaction of silanols with mesitylene, a probe molecule which cannot penetrate the channels, has been studied in order to distinguish between internal and external OH groups. Molecular mechanics and ab initio methods have also been used to model the structure and the vibrational features of a properly designed nest in order to support the assignments of the IR spectrum.     

氮化制度对Si-Al-Al2O3体系合成Sialon的影响

以SiC、α-Al2O3微粉、Si粉、Al粉为原料,在1450℃流动氮气中制备Sialon/SiC材料。研究了不同温度保温氮化对Sialon合成的影响。研究结果表明:有部分硅粉残余没有氮化;在1100℃保温氮化的氮化率高于在1150℃、1200℃保温氮化;1100℃保温氮化,残余Si量少、分布均匀,残余硅熔聚现象较轻,利于Sialon的合成。     

利用粉煤灰生产SiC陶瓷原料

利用粉煤灰部分或全部代替石英砂,配以适量的锯末,在高温炉中特定的烧成制度下,采用SiO2-C还原法将粉煤灰中的二氧化硅与锯末中的碳结合制取高性能的SiC陶瓷原料。利用正交实验对合成工艺中的合成温度、保温时间、碳过量数进行了设计和探索性实验,并对合成产物中的碳化硅的含量进行了测试。研究表明,在经催化剂(FeCl26H2O)浸泡12小时,加入2%矿化剂,在1380℃的合成温度下,保温时间2小时,碳过量10%的情况下,生成的SiC陶瓷原料中SiC的含量在53.6%以上。     

Sol-Gel Alumina Coating for Improved Cyclic Oxidation Resistance of Silicon Nitride

A 25 nm thick α-alumina layer was deposited on a turbine-grade silicon nitride by sol-gel dip coating and subsequent heat treatment in air at 1200°C. This layer had a nanometer grain structure. Silicon nitride protected by this thin layer showed a significant improvement in oxidation resistance over its uncoated counterpart after 200 cyclic exposures in air at 1250°C. The oxide layer grown on the coated silicon nitride also exhibited superior surface morphology, compared with the uncoated silicon nitride.