Control of the Morphology and Structural Development of Solution‐Processed Functionalized Acenes for High‐Performance Organic Transistors

Solution‐processable functionalized acenes have received special attention as promising organic semiconductors in recent years because of their superior intermolecular interactions and solution‐processability, and provide useful benchmarks for organic field‐effect transistors (OFETs). Charge‐carrier transport in organic semiconductor thin films is governed by their morphologies and molecular orientation, so self‐assembly of these functionalized acenes during solution processing is an important challenge. This article discusses the charge‐carrier transport characteristics of solution‐processed functionalized acene transistors and, in particular, focuses on the fine control of the films' morphologies and structural evolution during film‐deposition processes such as inkjet printing and post‐deposition annealing. We discuss strategies for controlling morphologies and crystalline microstructure of soluble acenes with a view to fabricating high‐performance OFETs.     

MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

We report material and electrical properties of tungsten silicide metal gate deposited on 12 in. wafers by chemical vapor deposition (CVD) using a fluorine free organo-metallic (MO) precursor. We show that this MOCVD WSi_x thin film deposited on a high-k dielectric (HfSiO:N) shows a N+ like behavior (i.e. metal workfunction progressing toward silicon conduction band). We obtained a high-k/WSi_x/polysilicon “gate first” stack (i.e. high thermal budget) providing stable equivalent oxide thickness (EOT) of ∼1.2 nm, and a reduction of two decades in leakage current as compared to SiO₂/polysilicon standard stack. Additionally, we obtained a metal gate with an equivalent workfunction (EWF) value of ∼4.4 eV which matches with the +0.2 eV above Si midgap criterion for NMOS in ultra-thin body devices.     

Structural and optical properties of silicon nanowires synthesized by Ag-assisted chemical etching

Metal-assisted chemical etching (MACE) of silicon in an aqueous solution of hydrofluoric acid and hydrogen peroxide is established for the fabrication of large-area uniform silicon nanowire (SiNW) arrays. The effect of the silver catalyst layer thickness on the morphology of the synthesized nanostructures and nanowires is investigated. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) reveal that the morphology of the fabricated silicon nanostructures remarkably depends on the catalyst layer thickness, and an optimum layer thickness is necessary for the fabrication of SiNWs. Also the effect of different etching times on the structural and optical properties of the fabricated SiNWs is investigated. FESEM showed a linear increment of the nanowire length and slight diameter changes through different etching times. The ultralow reflectance of SiNWs in the absorption region through the measurement of specular and diffuse reflectance showed that with increase in the etching time, the total reflectance remarkably decreases. A broadband visible photoluminescence (PL) emission from these wires was observed, and it could be stated that the silicon nanocrystals (SiNCs) are mostly responsible for the PL emission. The SiNC sizes were determined by an analytical model through a frequency shift in the Raman spectrum. The synthesized optically-active SiNWs could, therefore, be considered as a promising candidate for a new generation of nanoscale opto-electronic devices.     

Synthesis,Characterization, and Field‐Effect Transistor Performance of Thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene Derivatives

The synthesis, characterization, and field‐effect transistor (FET) properties of a new class of thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene derivatives are described. The optical spectra of their films show the presence of stronger interactions between molecules in the solid state. Thermal analyses reveal that the three materials are thermally stable and have no phase transitions at low temperature. The crystal structures are determined, and show π‐stacked structures and intermolecular S···S contacts. These organic materials exhibit p‐type FET behavior with hole mobilities as high as 0.14 cm² V^?1 s^?1 and an on/off current ratio of 10⁶. These results indicate that thieno[3,2‐b]thieno [2′,3′:4,5]thieno[2,3‐d]thiophene, as a linear π‐conjugated system, is an effective building block for developing high‐performance organic semiconductors.     

Enhanced Performance of Fullerene n‐Channel Field‐Effect Transistors with Titanium Sub‐Oxide Injection Layer

Enhanced performance of n‐channel organic field‐effect transistors (OFETs) is demonstrated by introducing a titanium sub‐oxide (TiO_x) injection layer. The n‐channel OFETs utilize [6,6]‐phenyl‐C₆₁ butyric acid methyl ester (PC₆₁BM) or [6,6]‐phenyl‐C₇₁ butyric acid methyl ester (PC₇₁BM) as the semiconductor in the channel. With the TiO_x injection layer, the electron mobilities of PC₆₁BM and PC₇₁BM FET using Al as source/drain electrodes are comparable to those obtained from OFETs using Ca as the source/drain electrodes. Direct measurement of contact resistance (R_c) shows significantly decreased R_c values for FETs with the TiO_x layer. Ultraviolet photoelectron spectroscopy (UPS) studies demonstrate that the TiO_x layer reduces the electron injection barrier because of the relatively strong interfacial dipole of TiO_x. In addition to functioning as an electron injection layer that eliminates the contact resistance, the TiO_x layer acts as a passivation layer that prevents penetration of O₂ and H₂O; devices with the TiO_x injection layer exhibit a significant improvement in lifetime when exposed to air.     

钴铂纳米线阵列的制备与性能研究

在具有纳米级孔洞的多孔氧化铝模板上,用电化学方法成功地制备了CoPl3纳米线有序阵列复合膜。分别用透射电子显微镜（TEM）、选区电子衍射（SAED）、X射线衍射（XRD）、振动样品磁强计（VSM）和超导量子干涉仪（SQUID）对样品进行测试与表征。形貌观察和物相分析表明,模板中的CoPl3纳米线构成的阵列,排列均匀有序,相互平行;而纳米线中的CoPl3为Ll2无序结构。磁性研究表明,纳米线的无序晶体结构决定了纳米线阵列弱的磁晶各向异性;同时纳米线中部分小晶粒在400K左右表现出顺磁性,导致纳米线阵列居里温度的下降。比较低温和室温下的磁滞回线,低温下有大的矫顽力,从另一方面证明纳米线中的小晶粒确实存在相转变。     

Pre-avalanche Ultraviolet Photoconduction Properties of Transitional-Metal-Doped ZnO Nanowires

The ultraviolet (UV) photoelectric characteristics of transitional metal (Cu) doped ZnO nanowires produced by the self-catalytic vapor–liquid–solid (VLS) method were investigated by performing a series of photoconduction and time-resolved measurements. The photocurrent voltage characteristics obtained on the nanowires configured as two-terminal metal–semiconductor–metal photodetectors exhibited a nonmonotonic behavior attributed to the interplay of several limiting mechanisms: Schottky contacts and trapping/detrapping effects that take place at low and intermediate (pre-avalanche) bias regimes, respectively. In the intermediate biases, the photocurrent was power-law dependent, i.e., changed with voltage as and for excitation wavelengths of 365 nm, 302 nm, and 254 nm, respectively. The dependence of the exponent on the wavelength of the light is analyzed and explained based on the detailed consideration of the contribution of different deep-defect Cu levels formed within the band gap of ZnO. The study will be important to those working in the area of ZnO-based nanophotodetectors, optical switches, and sensors.     

Synthesis of gallium oxide nanowires and their electrical properties

Gallium oxide (Ga₂O₃) nanowires have been synthesized using a novel method by high-frequency inductive heating in a room temperature environment. Nanowires with high-yield were grown on silicon substrates in less than 3 min, using Ga₂O₃/graphite as the source powder. Scanning electron microscopy showed nanowire diameters of 20-40 nm and lengths up to several tens of microns, and high-resolution transmission electron microscopy verified the single-crystalline lattice of the nanowires. Electrical properties were investigated by connecting a single Ga₂O₃ nanowire in the field-effect transistor configuration. This demonstration further illustrates the feasibility of an easy and large-scale synthesis of nanomaterials by using high-frequency inductive heating.     

High‐Performance,Low‐Operating‐Voltage Organic Field‐Effect Transistors with Low Pinch‐Off Voltages

Organic field‐effect transistors suffer from ultra‐high operating voltages in addition to their relative low mobility. A general approach to low‐operating‐voltage organic field‐effect transistors (OFETs) using donor/acceptor buffer layers is demonstrated. P‐type OFETs with acceptor molecule buffer layers show reduced operating voltages (from 60–100 V to 10–20 V), with mobility up to 0.19 cm² V^?1 s^?1 and an on/off ratio of 3 × 10⁶. The subthreshold slopes of the devices are greatly reduced from 5–12 V/decade to 1.68–3 V/decade. This favorable combination of properties means that such OFETs can be operated successfully at voltages below 20 V (|V_DS| ≤ 20 V, |V_GS| ≤ 20 V). This method also works for n‐type semiconductors. The reduced operating voltage and low pinch‐off voltage contribute to the improved ordering of the polycrystalline films, reduced grain boundary resistance, and steeper subthreshold slopes.     

Ge组分对SiGe HBT直流特性的影响

制作了基区Ge组分分别为0.20和0.23的多发射极指数双台面结构SiGe异质结双极型晶体管(HBT)。实验结果表明,基区Ge组分的微小增加,引起了较大的基极复合电流,但减小了总的基极电流,提高了发射结的注入效率,电流增益成倍地提高。Ge组分从0.20增加到0.23,HBT的最大直流电流增益从60增加到158,提高了约2.6倍。