Temperature dependence of photoluminescence of QD arrays

It is essentially important to understand the temperature dependence of the photoluminescence of multimodal quantum dot (QD) arrays for the realization of efficient photonic devices. In this paper, the dynamics processes of different density multimodal QD arrays were fitted by using the rate equation model. It is shown that, in high density QD arrays, the intensity of photoluminescence of different QD families has different temperature dependence, and the intensity of photoluminescence is quenched as the temperature increases in low density QD arrays. In high density QD arrays, as the temperature increases, the carriers will be thermally excited into the wetting layer from QDs, and then some of them will be recaptured by the big scale QDs; carrier coupling takes place between the different QD families, while in low density QD arrays, the carrier transfer between different QD families will be limited. Temperature dependence of the maximum of the ratio of photoluminescence intensity of different QD families strongly depends on the difference of thermal activation energies.     

基于迈克耳孙干涉系统的拼接主镜共相位检测技术

为实现地基拼接式大口径望远镜主镜整体面形连续性,提出了一种新方法,对拼接子镜的相互位置误差进行高精度检测,并进行相关校正,从而使望远镜取得或接近于其衍射极限的光学成像质量。拼接子镜间需要进行校正的位置误差包括子镜间的倾斜误差和垂向平移误差,其中子镜之间的垂向平移误差需要被校正到100 nm以下,相当于入射光波长的几分之一。为实现此目标,在基于迈克耳孙干涉原理的基础上设计出一套相位误差检测系统,应用He-Ne激光与白光作为其光源系统,对拼接主镜子镜间相位误差进行高精度检测,同时解决了垂向平移误差的λ/2相位模糊性问题。系统的不确定度为8～10 nm,检测范围为45～60μm。对系统的设计进行了分析,并仿真出基于该检测系统的理论干涉图形,得出理想的检测结果。     

一种新的阵列半导体激光器侧面耦合双包层光纤的方法研究

V型槽侧面耦合是目前双包层光纤泵浦光耦合的方法之一.本文提出了一种新的制作V型槽进行侧面泵浦的工艺方法,即在光纤预制棒上进行刻槽,然后对侧面已刻出一长条V型槽的顶制棒进行拉丝.针对这种新的侧面泵浦方法的耦合效率进行了理论的分析和计算.通过对交迭场的积分求出这种新的侧面泵浦方法的耦合效率,并对激光二极管阵列距离V型槽的位置以及V型槽所开的角度进行了优化.为随后的实验提供了理论依据.     

水下声信号光电探测技术的实验研究

为了实现水下声信号的遥感探测,针对水下声信号光电探测技术的强度调制理论,提出了光线分析理论模型,并进行了初步的理论分析和实验验证,取得了频率为65Hz和100Hz的水下声信号的探测数据,验证了水下声信号光电探测技术的强度调制理论.实验结果表明,在空气中利用激光,在水中利用声波,通过这两种信号载体来探测水下声信号技术是可行的,这一结果对于水下声信号光电探测技术的研究具有一定的参考价值.     

压电陶瓷光纤相位调制控制系统的研制

压电陶瓷光纤相位调制器是光纤傅里叶变换光谱测量系统中的核心器件之一,压电陶瓷驱动控制系统的输出电压特性决定了压电陶瓷光纤相位调制器的多种性能,如线性、分辨率、动态特性等,从而对光纤傅里叶变换光谱测量系统的光谱分辨率、测量速度和系统噪声等重要指标产生影响.应用复杂可编程逻辑器件(CPLD)、复合高压运放和单片机等先进电子技术设计压电陶瓷光纤相位调制控制系统.实验表明,该系统加载压电陶瓷容性负载后,在设定的频率范围内显示出了较好的动态特性与线形度,能很好地满足光纤相位调制技术对压电陶瓷工作电压波形的要求.     

热拉式多材料纤维光电子技术研究进展与展望

随着纺织工程和材料科学的快速发展,智能纤维与织物以其柔软、轻便、透气等优势成为可穿戴设备的首选载体。热拉式多材料光电子纤维有望通过热拉制工艺发展为具有多参量感知、温度调控、信息交互等功能的智能纤维。为使热拉式多材料光电子纤维可更好地服务于纺织行业,重点讨论了热拉式多材料纤维光电子技术的研究进展,总结了热拉纤维内微纳结构的调控机制,阐述了热拉式多材料纤维在传感、能源、生物、医疗等场景中的应用,并展望了热拉式多材料纤维光电子技术未来在材料选择及研发、纤维结构调控、纺织加工、多功能集成、人工智能5个方面的研究趋势。最后指出：热拉式多材料光电子纤维未来将从单一功能向多功能、力学性能改善、智能计算等方向发展,以便更好地与传统纺织加工技术结合,进一步提升织物的功能性、穿戴舒适性、场景普适性。     

Recent Advances in Biointegrated Optoelectronic Devices

With recent progress in the design of materials and mechanics, opportunities have arisen to improve optoelectronic devices, circuits, and systems in curved, flexible, stretchable, and biocompatible formats, thereby enabling integration of customized optoelectronic devices and biological systems. Here, the core material technologies of biointegrated optoelectronic platforms are discussed. An overview of the design and fabrication methods to form semiconductor materials and devices in flexible and stretchable formats is presented, strategies incorporating various heterogeneous substrates, interfaces, and encapsulants are discussed, and their applications in biomimetic, wearable, and implantable systems are highlighted.     

Fully‐Inorganic Trihalide Perovskite Nanocrystals: A New Research Frontier of Optoelectronic Materials

All‐inorganic trihalide perovskite nanocrystals (NCs) are emerging as a new class of superstar semiconductors with excellent optoelectronic properties and great potential for a broad range of applications in lighting, lasing, photon detection, and photovoltaics. This article provides an up‐to‐date review on the developments of fully‐inorganic trihalide perovskite NCs by emphasizing their controllable solution fabrication strategies, structural phase transformation, tunable optoelectronic properties, stability, as well as their photovoltaic and optoelectronic applications. Among the properties to be surveyed, particular focus is on the size‐, shape‐, and composition‐dependent photoluminescence properties. Finally, by identifying new challenges, suggestions are provided for further research and potential development of this area.     

Lateral 2D WSe2 p–n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

As unique building blocks for next-generation optoelectronics, high-quality 2D p–n junctions based on semiconducting transition metal dichalcogenides (TMDs) have attracted wide interest, which are urgent to be exploited. Herein, a novel and facile electron doping of WSe₂ by cetyltrimethyl ammonium bromide (CTAB) is achieved for the first time to form a high-quality intramolecular p–n junction with superior optoelectronic properties. Efficient manipulation of charge carrier type and density in TMDs via electron transfer between Br⁻ in CTAB and TMDs is proposed theoretically by density functional theory (DFT) calculations. Compared with the intrinsic WSe₂ photodetector, the switching light ratio (I_light/I_dark) of the p–n junction device can be enhanced by 10³, and the temporal response is also dramatically improved. The device possesses a responsivity of 30 A W⁻¹, with a specific detectivity of over 10¹¹ Jones. In addition, the mechanism of charge transfer in CTAB-doped 2D WSe₂ and WS₂ are investigated by designing high-performance field effect transistors. Besides the scientific insight into the effective manipulation of 2D materials by chemical doping, this work presents a promising applicable approach toward next-generation photoelectronic devices with high efficiency.