Wearable Organic Electrochemical Transistor Array for Skin-Surface Electrocardiogram Mapping Above a Human Heart

Electrocardiogram (ECG) mapping can provide vital information in sports training and cardiac disease diagnosis. However, most electronic devices for monitoring ECG signals need to use multiple long wires, which limit their wearability and conformability in practical applications, while wearable ECG mapping based on integrated sensor arrays has been rarely reported. Herein, ultra-flexible organic electrochemical transistor (OECT) arrays used for wearable ECG mapping on the skin surface above a human heart are presented. QRS complexes of ECG signals at different recording distances and directions relative to the heart are obtained. Furthermore, the ECG signals are successfully analyzed by the devices before and after exercise, indicating potential applications in some sports training and fitness scenarios. The OECT arrays that can conveniently monitor spacial ECG signals in the heart region may find niche applications in wearable electronics and healthcare products in the future.     

Solid Solvation Assisted Electrical Doping Conserves High-Performance in 500 nm Active Layer Organic Solar Cells

Organic solar cells (OSCs) process fascinating solution-printing capability to achieve low-cost and large-scale manufacture. However, the rapid power conversion efficiency (PCE) decay with active layer thickness enlargement inhibits the implement of OSCs’ potential advantages. To overcome the bottlenecks of PCE decay in thick active layer OSCs, the electrical doping with componential selectivity in bulk heterojunction (BHJ) film is achieved by introducing a solid solvation additive. Benefiting from the higher exciton splitting efficiency together with the longer drift (L_dr) and diffusion (L_diff) lengths, an OSC with 100 nm BHJ film demonstrates a PCE increment from 16.44% to 18.24% with prolonged dark and illuminated storage stabilities. Applying the solid solvation assisted (SSA) doping method in the OSCs with 500 nm active layer, the PCE significantly increases by 31.9%, from the original value of 11.79% to 15.55%. It further improves to 15.84% in a ternary blend thick-film device, which is the record value to the best of our knowledge. Besides, the SSA doping narrows the PCE gap between the 0.04 and 1 cm² devices. All improvements demonstrate the great potential of SSA doping for OSC commercial manufacture, since it optimizes the photovoltaic performance under all practical conditions of long-term, thick-film, and large-area.     

Modulating Backbone Conjugation of Polymeric Thermally Activated Delayed Fluorescence Emitters for High-Efficiency Blue OLEDs

Blue conjugated polymers-based OLEDs with both high efficiency and low efficiency roll-off are under big challenge. Herein, a strategy of local conjugation is proposed to construct high-efficiency blue-emitting conjugated polymers, in which the conjugation degree of polymeric backbones is adjusted by inserting different spacers. In this way, the energy level of triplet state and the energy transfer direction of the polymeric main-chains can be effectively regulated. Benefiting from such fine regulation, the prepared alternative copolymers Alt-PB36 with local conjugated main-chains can better suppress the accumulation of long-lived triplet excitons comparing with the complete conjugated polymers. The higher PLQY of Alt-PB36 also verifies the effective energy transfer from the polymeric main-chains to the TADF units. Accordingly, Alt-PB36 based solution-processed OLEDs achieve an EQE_max of 11.6% and a very low efficiency roll-off of 2.8% at 100 cd m⁻² and 15.2% at 500 cd m⁻². This result represents the best efficiency among blue light-emitting conjugated polymer-based OLEDs so far under high luminance.     

5G毫米波通信用低插损高隔离GaAs PHEMT单刀双掷开关

基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,实现了一款用于5G毫米波通信的低插损高隔离单刀双掷(SPDT)开关芯片。为了降低插损,每个开关支路通过四分之一波长阻抗变换器连接到天线端,并通过优化传输线和器件总栅宽实现了良好的端口匹配;为了提高隔离度,采用了三并联多节枝的分布式架构形成高的输入阻抗状态,实现信号的全反射。芯片面积为2.1 mm×1.1 mm。在片测试结果显示,在24.25~29.5 GHz的5G毫米波频段内该SPDT开关实现了小于1.1 dB的极低插损和大于32 dB的高隔离度,1 dB压缩点输入功率大于26 dBm。     

NH3 对二甲苯光氧化形成二次有机气溶胶的影响

二甲苯是一种重要的人为源 VOC, 也是城市地区 SOA 的重要前体物。二甲苯光氧化形成的 SOA 受多种环 境因素影响, 而 NH3 对该反应形成的 SOA 生成产率及反应机制的影响尚不清楚。基于室内烟雾箱模拟系统, 探讨了 NH3 对二甲苯光氧化形成 SOA 质量浓度、物理特性及化学组成的影响。研究表明, 在低浓度条件下, NH3 对二甲苯 光氧化生成 SOA 具有明显的促进作用, 结合气溶胶质谱结果发现 NH3 促进醛酮类物质进入颗粒相以及含氮有机物的 生成是导致 SOA 质量浓度增加的主要原因。此外, NH3 能够提高邻二甲苯生成 SOA 的吸光度, 但是对对二甲苯无明 显影响。分析表明, 相较于对二甲苯, 邻二甲苯光氧化会生成大量醛类物质, NH3 与醛类发生美拉德反应是导致 SOA 吸光性增加的主要原因。     

(CoFe)Se2@NC超级电容器电极材料的制备及其电化学性能

金属-有机框架(MOF)衍生的过渡金属硒化物和多孔碳纳米复合材料具有巨大的储能优势,是应用于电化学储能的优良电极材料。采用共沉淀法制备CoFe类普鲁士蓝(CoFe-PBA)纳米立方,并通过静电组装在CoFe-PBA上包覆聚吡咯(PPy)得到CoFe-PBA@PPy;通过在400℃氮气中退火并硒化成功制备了氮掺杂的碳(NC)包覆(CoFe)Se₂的(CoFe)Se₂@NC纳米复合材料,并对其结构和形貌进行了表征。以(CoFe)Se₂@NC为电极制备了超级电容器,测试了其电化学性能,结果表明,在电流密度1 A/g时超级电容器的比电容达到1047.9 F/g,在电流密度5 A/g下1000次循环后具有良好的循环稳定性和96.55%的比电容保持率。由于其性能优越、无毒、成本低和易于制备,未来(CoFe)Se₂@NC纳米复合材料在超级电容器中具有非常大的应用潜力。     

Study of tool trajectory in blisk channel ECM with spiral feeding

Electrochemical machining (ECM) plays an important role in blisk manufacturing. There are two steps in blisk ECM: machining of channels and precise shaping of blade profiles. In channel machining, channels are machined in the workpiece with allowance left to the following process. Therefore, the main aim of channel machining with ECM is to improve the allowance distribution. With this aim, a new ECM method for blisk channels, spiral feeding ECM, is developed in which the cathode feeds from blade tip to hub along with rotation motion around its axis. Through this combined motion, twisted channels are produced in the workpiece. The relationship between feed position and rotation angle is presented in the form of a mathematical model. Experiments with a feed rate of 1 mm/min confirm that spiral feeding ECM is feasible and efficient. Compared with radial ECM, the allowance differences in blank back and blank basin decrease by 32.7% and 33.6%, respectively. The surface roughnesses Ra in blank back, blank basin, and hub are 0.358, 0.308, and 0.102 µm, respectively. Thus, the allowance distribution is improved to be more uniform considerably and the surface quality is relatively high.     

Electrochemical stripping features of graphite and its products characterization

A stable dispersion in mixed solvent of water and N,N-dimethyl formamide (DMF) of graphene was synthesized by one-step electrochemical approach. Here we demonstrate about electrochemical stripping graphite to prepare graphene influence by different electrolytes. The physical and chemical properties of the stripping product had been characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), UV-Vis spectrophotometer (UV-Vis), Scanning electron microscopy (SEM), Transmission Electron Microscope (TEM) . The characteristic results of XRD showed that it could improve the efficiency of graphite stripping when H₂SO₄ was used as electrolyte mother liquid and amount of HNO₃ was doped in electrolyte; XPS and FTIR results indicate that the electrochemical stripping products preserve the intrinsic structure of graphene. The results of SEM and TEM shown that the surface morphology of the as-prepared graphene was folded lamellar structure and have good transparency;its thickness varies from 0.8 nm to a few nanometers.     

The Electrochemical Response of Single Crystalline Copper Nanowires to Atmospheric Air and Aqueous Solution

In this paper, single crystalline copper nanowires (CuNWs) have been electrochemically grown through anodic aluminum oxide template. The environmental stability of the as‐obtained CuNWs in both 40% relative humidity (RH) atmosphere and 0.1 m NaOH aqueous solution has been subsequently studied. In 40% RH atmosphere, a uniform compact Cu₂O layer is formed as a function of exposure time following the logarithmic law and epitaxially covers the CuNW surfaces. It is also found that the oxide layers on CuNWs are sequentially grown when subjected to the cyclic voltammetry measurement in 0.1 m NaOH solution. An epitaxially homogeneous Cu₂O layer is initially formed over the surface of the CuNW substrates by solid‐state reaction (SSR). Subsequently, the conversion of Cu₂O into epitaxial CuO based on the SSR takes place with the increase of applied potential. This CuO layer is partially dissolved in the solution forming Cu(OH)₂, which then redeposited on the CuNW surfaces (i.e., dissolution‐redeposition (DR) process) giving rise to a mixed polycrystalline CuO/Cu(OH)₂ layer. The further increase of applied potential allows the complete oxidation of Cu₂O into CuO to form a dual‐layer structure (i.e., CuO inner layer and Cu(OH)₂ outer layer) with random orientations through an enhanced DR process.