Microporous,Crystalline, and Water-Processable Framework Materials of Organic Amphiphile Salts

Porous framework materials are of major importance for a wide range of technologies. Nevertheless, many of these materials lack processibility as they are typically synthesized under rather harsh conditions and obtained as microcrystalline powders that cannot easily be coated or deposited from solution. Herein, a new approach to water-processable metal–organic framework materials is presented. The materials are based on amphiphilic organic building blocks consisting of polar carboxylate groups and non-polar alkyl chains connected to a rigid aromatic core. The amphiphilic building blocks assemble to porous framework structures via bonding to kinetically labile sodium ions from concentrated aqueous solution. The obtained crystalline materials, termed amphiphile salt frameworks , are thermally and mechanically stable (some derivatives up to 365 °C and up to at least 4000 bar hydrostatic pressure), exhibit persistent microporous channels accessible to several gases (N₂, CO₂, propane, propylene, n-butane), and can be reversibly assembled/disassembled by crystallization from or dissolution in water. Systematic variation of the hydrophobic side chains of the amphiphile building blocks allows extracting structure-property relationships and first design rules for this new class of water-processable microporous framework materials.     

Revealing and Eliminating the Light-Soaking Issue in Metal Oxide-Based Inverted Organic Solar Cells

Inverted organic solar cells (i-OSCs) provide an exciting opportunity for commercialization owing to their excellent device air stability. However, light soaking (LS) issue generally occurs in metal oxide based i-OSCs, causing drastically decreased performance. The underlying root of LS effect is not clearly clarified until now. Herein, it is demonstrated that the surface oxygen defects on metal oxide nanoparticles, such as chemisorbed superoxide (O²⁻) and hydroxide (OH) dangling bonds, are the main reasons for LS issue in i-OSCs. The O²⁻ layer induces band bending at the cathode interface and increases the work function (WF) of metal oxide, thus leading to inefficient charge transport. The dangling bonds serve as interfacial trap states and cause non-radiative recombination, thus leading to the reduced open circuit voltage (V_oc). With ultraviolet (UV) illumination, the surface oxygen defects are interacted with photogenerated carriers, thereby improving the photovoltaic performance. Additionally, UV pretreatment of metal oxide films is employed to eliminate the LS issue and the resulting device yields significantly improved fill factors from 50.20% to 73.50% in the pristine SnO₂ based i-OSCs. This study reveals the origin of LS effect in i-OSCs and proposes a suggested model for LS mechanism.     

Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating

The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V^?1 s^?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).     

Interfacial modifying layer-driven high-performance organic thin-film transistors and their nitrogen dioxide gas sensors

Organic thin-film transistors (OTFTs) based on bottom-gate bottom-contact configuration were fabricated by inserting two kinds of modifying layers at the interface of source/drain electrode and organic semiconductor, while nitrogen dioxide (NO₂) sensing capability was also evaluated based on the obtained OTFTs. Compared to OTFT without interfacial layer, the field-effect mobility (μ) was enhanced from 0.018 cm²/Vs to 0.15 cm²/Vs by incorporating with MoO_x interfacial layer. Moreover, when exposed to 30 ppm NO₂, the saturation current and μ of OTFT with MoO_x interfacial layer increase 22.7% and 26.7%, respectively, while in original OTFT, the values are only 3.0% and 3.7%, respectively. The mechanism of performance improvement of OTFT sensor was systematically studied by focusing on the interface of source/drain electrode and organic semiconductor. The reduced contact resistance leads to higher μ, meanwhile, pentacene morphology modulation on MoO_x contributes to better diffusion of NO₂ molecules. As a result, higher μ and more diffused gas molecules enhance the gas sensing property of the transistor.     

A universal roll‐to‐roll slot‐die coating approach towards high‐efficiency organic photovoltaics

This work develops a combinational use of solvent additive and in‐line drying oven on the flexible organic photovoltaics to improve large‐area roll‐to‐roll (R2R) slot‐die coating process. Herein, addition of 1,8‐diiodooctane (DIO) in the photoactive layer is conducted to yield a performance of 3.05% based on the blending of poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PC₆₁BM), and a very promising device performance of 7.32% based on the blending of poly[[4,8‐bis[(2‐ethylhexyl)oxy] benzo[1,2‐b:4,5‐b’] dithiophene‐2,6‐diyl] [3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3,4‐b]thiophenediyl]] (PTB7) and [6,6]‐phenyl C₇₁‐butyric acid methyl ester (PC₇₁BM). Based on this R2R slot‐die coating approach for various polymers, we demonstrate the high‐performance result with respect to the up‐scaling from small high‐PCE cell to large‐area module. This present study provides a route for fabricating a low‐cost, large‐area, and environmental‐friendly flexible organic photovoltaics.     

新型发射极指组合结构功率SiGe HBT热分析

提出了一种发射极指分段和非均匀发射极指长、指间距组合的新型器件结构,以改善多指功率硅锗异质结双极晶体管(SiGe HBT)的热稳定性。考虑器件具有多层热阻,发展建立了相应的热传导模型。以十指功率SiGe HBT为例,运用有限元方法对其进行热模拟,得到三维温度分布。与传统发射极结构器件相比,新结构器件最高结温从416.3 K下降到405 K,各个发射指上的高低温差从7 K～8 K下降为1.5 K～3 K,热阻值下降14.67 K/W,器件整体温度分布更加均匀。     

Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current

Vertical organic field-effect transistors (VOFETs) with nanoscale channel openings have been fabricated using pentacene as an active layer material. To achieve uniform nanoscale two-dimensional channel openings, a laser holography lithography has been introduced. Uniformly distributed and well-aligned holes with 250 nm diameter were successfully obtained with the laser holography lithography. VOFET devices with these channel openings have shown high on/off ratio of about 10³ without any further treatment. Gate leakage current was also decreased with an additional insulating layer generated on the gate electrode sidewall via plasma oxidation.     

碳纳米管随机网络场效应晶体管电学性能分析

利用电子束蒸发技术在Si衬底形成Au电极作为底栅电极,在底栅电极上生长SiO₂薄膜。超声分散CVD法合成的商用单壁碳纳米管(SWCNTs),使用匀胶机将单壁碳纳米管悬浮液均匀旋涂于SiO₂薄膜上。再利用荫罩式电子束蒸发技术,在单壁碳纳米管随机网络薄膜表面制备漏源电极。该工艺过程避免了碳纳米管过多的化学接触,有效地保护了碳纳米管的性状。在室温条件下对器件电学性能进行测试和分析。使用该方法制备的单壁碳纳米管随机网络薄膜场效应晶体管,具有器件性能稳定、重复性和一致性较好等优点,并可用于构建碳纳米管逻辑电路。该方法对于研究基于碳纳米管的大规模、低成本的集成电路,具有较高的借鉴价值。     

Aluminum/MoO3 anode thin films:an effective anode structure for high-performance flexible organic optoelectronics

正We report AI/MoO_3 thin film used as a complex anode in high-performance OLEDs.The unique efficacy of the device was found to result from the enhanced injection of holes into the commonly used hole-transporting molecules due to a large reduction in the interface dipole at the anode/organic interface.The superior optical characteristics are attributed to a strong cavity effect.Due to the ease of processing Al/M0O_3 we successfully demonstrated large-area flexible OLEDs on plastic substrates with uniform emission.     

Ga掺杂ZnO薄膜的MOCVD生长及其特性

利用低压MOCVD技术在(0002)蓝宝石上外延获得高质量的ZnO∶Ga单晶薄膜,并研究了Ga的不同掺杂浓度对材料电学和光学特性的影响．当Ga/Zn气相摩尔比为3.2 at%时,ZnO(0002)峰半高宽仅为0.26°,载流子浓度高达2.47e19cm－3,透射率高于90%;当载流子浓度升高时,吸收边出现明显的Burstein-Moss蓝移效应．同时室温光致发光谱显示,紫外峰位随载流子浓度的增加而发生红移,峰形展宽,这和Ga高掺杂所引起的能带重整化效应有关．当Ga/Zn比达到6.3 at%时,由于高掺杂浓度下Ga的自补偿效应导致载流子浓度下降．