HfO2 Gate Dielectrics for Future Generation of CMOS Device Application

Introduction High- k gate dielectrics have been extensivelystudied as alternates to conventional gate oxide( Si O2 ) due to the aggressive downscaling of Si O2thickness in CMOS devices,and hence the exces-sive gate leakage.Hf O2 has emerged as one...     

基于AlAs氧化法研制的垂直腔面发射激光器

结合垂直腔面发射激光器的制备,研究了AlAs选择性氧化工艺中氧化炉温、氮气流量、水温等条件和AlAs层的横向氧化速率之间的关系,并得到了可精确控制氧化过程的工艺条件,在优化的工艺条件下运用湿氮氧化制备出InGaAs/GaAs垂直腔面发射激光器,实现了器件的室温脉冲激射.     

n-GaN上Ti/Al电极的表面处理与退火

实验研究了不同表面处理方法和不同退火条件对GaN上的Ti/Al电极的影响,用CH3CSNH2/NH4OH处理后的GaN材料的荧光光谱强度最高,在该材料上制作的Ti/Al电极的欧姆接触电阻率最小.通过欧姆接触电阻率,I-V曲线,X射线衍射等手段,分析了GaN与Ti/Al 电极接触表面在退火过程中的固相反应,提出了二次退火的方法.     

Ge/Si量子点的生长研究进展

要有效应用SK模式生长的Ge量子点,必须实现Ge量子点的位置可控并且进一步缩小Ge量子点的尺寸.阐释了这方面的研究进展,特别对图形衬底生长Ge量子点,利用Si表面的自组织性在错切割的邻晶面衬底上生长有序Ge岛,表面杂质诱导成岛这三个方面的进展加以介绍分析.     

声表面波陷波器与纵向耦合结构相结合

为了消除声表面波纵向耦合谐振式滤波器高端带外邻近通带处的肩膀,该文提出将纵向耦合谐振式滤波器与声表面波陷波器相结合,用来改善其近阻带抑制。文中给出了理论模拟及实验结果。实验结果与理论模拟基本一致,验证了方案的可行性。     

Stability and sensitivity for congestion control in wireless mesh networks with time varying link capacities

A critical challenge for wireless mesh networks is the design of efficient transport protocols that provide high bandwidth utilization and desired fairness in the multi-hop, wireless environment. While extensive efforts have been devoted to providing optimization based, distributed congestion control schemes for efficient bandwidth utilization and fair allocation in both wireline and wireless networks, a common assumption therein is fixed link capacities. This unfortunately will limit the application scope in wireless mesh networks where channels are ever changing. In this paper, we explicitly model link capacities to be time varying and investigate congestion control problems in multi-hop wireless networks. In particular we propose a primal–dual congestion control algorithm which is proved to be trajectory stable in the absence of feedback delay. Different from system stability around a single equilibrium point, trajectory stability guarantees the system is stable around a time varying reference trajectory. Moreover, we obtain sufficient conditions for the scheme to be locally stable in the presence of delay. Our key technique is to model time variations of capacities as perturbations to a constant link. Furthermore, to study the robustness of the algorithm against capacity variations, we investigate the sensitivity of the control scheme and through simulations to study the tradeoff between stability and sensitivity.     

表面横波生物传感器的灵敏度分析

分析了延迟线型表面横波(STW)生物传感器的灵敏度与栅阵材料、厚度的关系。给出了计算栅阵对表面横波束缚能力的方法,由STW的束缚能力可以直接得到传感器的灵敏度。从Auld微扰理论出发推导出表面横波传感器灵敏度的表达式。根据上述理论分析,以AT切割压电石英基片为例,分别计算金、银、铝三种栅阵材料在不同厚度时的传感器灵敏度,并给出对比分析结果。结果表明,在相同栅阵厚度时,采用金栅阵的传感器灵敏度最高,银次之,铝最小;传感器的灵敏度随着栅阵厚度的增加而增加。     

太赫兹辐射产生技术进展

分别就光学技术和电子学技术产生太赫兹波的方法,介绍其产生原理、研发现状和最新进展,重点介绍了光电导、光整流、参量振荡器和太赫兹量子级联激光器.     

带p埋层表面注入硅基LDMOS模型与优化

提出一种带p埋层的表面注入硅基LDMOS高压器件新结构,称为BSI LDMOS(surface implanted LDMOS with p buried layer).通过表面注入n+薄层降低导通电阻,p埋层不但改善横向表面电场分布,提高击穿电压,而且增大漂移区优化浓度.求解电势的二维Poisson方程,获得表面电场和击穿电压的解析式,研究结构参数对表面电场和击穿电压的影响,数值与解析结果吻合较好.结果表明:与常规结构相比较,BSI LDMOS大大改善了击穿电压和导通电阻的折衷关系.     

PCB技术的革新与进步

文章概述了近几年来在PCB工业中生产技术的革新与进步情况,特别是直流电镀(镀层均匀性、填孔镀等)、表面涂(镀)覆(化学镀镍/钯浸金和直接浸金等)技术的革新与进步,推动了PCB工艺技术的发展。