Red Emitting Phosphor (Y,Gd)BO3:Eu3+ for PDP Prepared by Complex Method

Red phosphor (Y, Gd)BO3:Eu3+ with grain shape, small size, non-agglomerate, high crystallinity and good photoluminescence (PL) intensity was prepared by a complex method that the precursor of the phosphor was prepared by co-precipitation method and the phosphor was prepared by combustion method. The SEM photos and the photoluminescence spectrum excited under VUV show that the morphology and luminescent properties of this phosphor are satisfied when an appropriate amount of urea was adopted as the combustion agent in the preparation procedure.     

Mapping of zinc content in Cd1−xZnxTe by optical methods

The paper compares different methods of optical mapping of zinc concentration x in Cd_1−xZn_xTe wafers for low x values and reviews the procedures for deriving band-gap energy from optical spectra (photoluminescence, absorption and reflectance) at different temperatures (liquid helium, liquid nitrogen and room temperature). Experimental errors of these techniques are compared and the segregation coefficient of zinc is calculated.     

Deep levels in bulk LEC single crystal IxGa1-xAs

Bulk single crystals of In_xGa_1-xAs (0.01 <x < 0.12) were successfully grown by the Liquid Encapsulated Czochraski (LEC) technique. These crystals are of high quality and can provide tunable substrate material for epitaxial application, since the lattice constant may be adjusted by varying the composition. Nominally undoped crystals were semi-insulating as grown ifx is less than about 0.05. Semi-insulating crystals with higher In composition can be obtained by chromium doping during crystal growth. The asgrown crystals were studied by 4.2 K photoluminescence spectroscopy (PL) and thermally stimulated current spectroscopy (TSC). Results from PL measurements indicate good crystal quality and impurity control. TSC spectra reveal several bulk traps in undoped and Cr doped semi-insulating samples. The activation energies of these traps decrease as In composition is increased. The amount of change in activation energy is about one third of the bandgap shrinkage due to increased In concentration.     

Rapid thermal annealing effects on the photoluminescence properties of molecular beam epitaxy-grown GaIn(N)As quantum wells with Ga(N)As spacers and barriers

This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ～400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ～5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion.     

Control of Magnetic Properties in (Cd,Mn)Te Quantum Wells Inserted in Pin Diodes

Using photoluminescence and photoluminescence excitation, weinvestigate the magnetic properties of (Cd,Mn)Te quantum wells inserted in pin diodes. Such structures give us the opportunity to tune the carrier density by applying a bias of the order of 1 V. Results obtained in a small magnetic field show the presence of magnetic domains, which persist as long as the quantum well is populated.     

Influence of capping layer thickness on the polarization of photoluminescence of CdSe/ZnSe quantum dots grown by metalorganic chemical vapor phase deposition

The polarization of the photoluminescence (PL) of self-assembled CdSe quantum dots (QDs), grown by metalorganic chemical vapor phase deposition, was measured. From the (001) surface, the PL was found preferentially polarized in the direction, while from the cleaved surface in the [001] direction. The polarization of PL depends strongly on the ZnSe capping layer thickness and the PL energy. With an increase in ZnSe coverage, the intensity ratio was found to increase first, then decrease after the coverage is thicker than a critical value. Moreover, such a critical thickness is smaller for larger QDs (lower PL energies). Possible origins of the PL polarization are discussed. We suggest that besides the quantum confinement effects, the strain field in the QDs also plays an essential role in the observed polarization of PL.     

自组织InAs/GaAs量子点的表面氮化研究

用低温光荧光(PL)和透射电子显微镜(TEM)研究了表面氮化自组织InAs/GaAs量子点的光学性能和微观结构。结果表明氮化后形成薄层的InAsN薄膜作为应变缓和层覆盖在量子点的表面,使得随着氮化时间的增加,InAs量子点的位错密度提高、尺寸变大、纵横比提高、发光波长变长、强度变低。     

EA-HFCVD 沉积纳米金刚石膜的光致发光分析

采用电子辅助-热丝化学气相沉积法(EA-HFCVD)在硅片上沉积出晶粒尺寸为30nm的均匀金刚石膜。生长过程中,预先加6A偏流生长1h,然后在0.8kPa条件下,无偏流生长3h。光致发光谱中存在4个发光中心分别位于1.682eV,1,564eV,1,518eV和1.512eV的发光峰。1.682eV处发光峰源于衬底硅原子掺杂于膜中引起的缺陷;其他发光峰源于金刚石晶格振动声子。光致发光强度越大对应的缺陷密度越大,从而降低了场发射域值电场强度,其关键可能源于金刚石膜电导型晶界。     

Recent Progress on Spectroscopy of Lanthanide Ions Incorporated in Semiconductor Nanocry stals

Doping luminescent lanthanide ions into semiconductor nanocrystals is an ideal approach for developing nanodevices for various applications. Quantum confinement effects are expected for lanthanide ions doped in small semiconductor nanocrystals. The most recent progress on the synthesis and spectroscopy of lanthanide ions in various semiconductor nanocrystals such as Ⅱ -Ⅵ, Ⅲ-Ⅴ and Ⅳ-Ⅵ families were systematically reviewed, focusing on our recent findings on the optical spectroscopy of Eu^3 ＋ doped in ZnO and TiO2 nanocrystals by wet chemical synthesis. The energy transfer from the band-gap excitation to lanthanides further confirmed that lanthanide ions could be successfully incorporated into the lattice sites in spite of the mismatch in ionic radii.     

High Purity and Large-scale Preparation of β-Ga2O3 Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics

Ga2O3 nano-structures, nanowires and nanosheets are produced on Au pre coated（111） silicon substrates with chemical vapor deposition（CVD） technique. By evaporating pure Ga powder in the H2O atmosphere under ambient pressure the large-scale preparation of β-Ga2O3 with monoclinic crystalline structure is achieved. The crystalline structures and morphologies of produced Ga2O3 nano-structures are characterized by means of scanning electron microscope（SEM）, X-ray diffraction（XRD）, selected area electron diffraction （SAED） and transmission electron microscope（TEM）. Raman spectrum reveals the typical vibration modes of Ga2O3 The vibration mode shifts corresponding to Ga2O3 nano-structures are not found. Two distinguish photoluminescence（PL） emissions are found at about 399 nm and 469 nm owing to the VO-VGa excitation and VO-VGaO excitation, respectively. The growth mechanisms of Ga2O3 nanowires and nanosheets are discussed with vapor liquid-solid（VLS） and vapor-solid（VS） mechanisms.