Ultraviolet Photoluminescence of Carbon Nanospheres and its Surface Plasmon‐Induced Enhancement

Ultraviolet (UV) light can be used in versatile applications ranging from photoelectronic devices to biomedical imaging. In the development of new UV light sources, in this study, stable UV emission at ≈350 nm is unprecedentedly obtained from carbon nanospheres (CNSs). The origin of the UV fluorescence is comprehensively investigated via various characterization methods, including Raman and Fourier transform infrared analyses, with comparison to the visible emission of carbon nanodots. Based on the density functional calculations, the UV fluorescence is assigned to the carbon nanostructures bonded to bridging O atoms and dangling –OH groups. Moreover, a twofold enhancement in the UV emission is acquired for Au‐carbon core‐shell nanospheres (Au‐CNSs). This remarkable modification of the UV emission is primarily ascribed to charge transfer between the CNSs and the Au surface.     

溶液pH值对PbWO4晶相和形貌的影响

在30℃下,以NazWO4和Pb（N03）2为原料,通过沉淀反应制备PbW04晶体。考察Pb（NO3）2溶液的pH值对PbW04的晶型和形貌的影响。通过XRD、Raman和SEM等表征,发现在酸性和碱性溶液中分别得到了梭状和八面体状的四方晶相PbW04晶体,而在中性溶液中,得到单斜晶相PbWO4纳米带,表明pH值显著影响Pb—WO4的晶型和形貌。室温下,以300m为激发波长研究产物的固体荧光光谱,发现碱性条件下得到的四方相Pb—WO4八面体具有最强的绿发光带,表明PbW04的荧光性质受其晶型和形貌影响。     

ZnO纳米颗粒的分散及光致发光特性

利用火焰喷雾法成功制备了ZnO纳米颗粒,通过对样品的X射线衍射谱（XRD）和场发射扫描电子显微照片（FESEM）分析,发现制备的颗粒大小较为均匀,直径在10-20nm左右;结合多种物理方法对样品进行分散处理后,FESEM表征显示颗粒间的团聚得到较好改善;光致发光谱表明随着颗粒尺寸的减小,样品的紫外发光和可见发光的强度逐渐增强．     

室温铁磁性蒲公英状氧化锌的制备及生长机理研究

以锌粉、醋酸锌和氢氧化钠为原料,采用水热法制备出了具有结构性缺陷的蒲公英状ZnO。通过X射线衍射仪、扫描电子显微镜、荧光光谱仪和超导量子干涉仪对产物的结构形貌和光学性能及磁学性能进行了表征,并对其生长机理进行了探讨。研究表明,蒲公英状氧化锌为六方纤锌矿结构,由许多顶端为锥尖形的棒自组装而成;其荧光本征发射峰在388nm处,属于激子跃迁发射。在波长450～492nm处所观察到的3个弱蓝光峰是由锌填隙原子中的电子到价带顶的跃迁所致;在波长492～580nm范围内出现的较为宽泛的绿光发射峰根源于电子从导带底到氧错位缺陷能级间的跃迁。蒲公英状ZnO中存在的结构性缺陷使得原本呈现抗磁性的ZnO具有了室温铁磁性,从而可作为一种稀磁半导体应用到自旋电子学领域中。     

Organometallic VPE growth of AlxGa1−xAs

The " hybrid" organometallic VPE process for the growth of Al_xGa_l-xAs has been explored. Six growth parameters have been considered; substrate orientation, substrate temperature during growth, total flow rate and ratios of Al, HC1 and As to the total group III flow rate. The effects of these six growth parameters on the growth process (growth rate, composition and surface morphology) and the materials properties (carrier concentration, photoluminescence intensity and spectrum) have been systematically studied. A technique has been developed for the growth of heterostructures by changing only the H₂ diluent flow rate. This results in high quality heterostructures with x changing from 0.05 to 0.30 in > 100 å.     

O3有效钝化多孔硅的研究

开发了用O3氧化钝化多孔Si（PS）的实用工艺方法。O3的基本作用是对Si-Hx和Si悬挂键（DB）的充分氧化，经过随后158d贮存的老化实验，得到了表面Si—H，键完全被Si-O3膜和Si-烷基膜所替代并覆盖的PS，其光致发光（PL）强度达到稳定的增强，这归因于PS纳米晶粒的表面势垒高度的提高以及量子效率的提高。     

硒化镉纳米粒子与碘化三甲氨基苯基卟啉钻复合膜光学性能研究

为了探索CdSe纳米粒子合成的最佳条件及其与碘化三甲氨基苯基卟啉钴（CoTAPPI）复合膜的光学性能，采用湿化学法合成了CdSe纳米粒子；利用逐层沉积法组装了CdSe—CoTAPPI复合膜。用紫外-可见吸收光谱监测了成膜过程。利用荧光光谱比较系统地研究了聚苯乙烯磺酸钠（PSS）、放置时间、热处理、紫外光照射等条件对复合膜发光性能的影响，结果发现复合膜的发光性能相对于单一组份的CASe纳米粒子和CoTAPPI都有很大程度改变。     

通孔氧化铝模板的制备和光学特性

采用阳极氧化法,制备了二维有序纳米通孔氧化铝模板.研究了工艺参数对通孔有序性、孔径、模板厚度等的影响,测量了通孔氧化铝模板的光透过、光吸收和光发射等光学特性.结果表明,在波长360 nm附近通孔氧化铝模板的光透过谱线和光吸收谱线发生突变,波长大于360 nm时,光透过增强;波长小于360 nm时,光吸收增强.通孔氧化铝模板的光致发光强度和峰位与激发光波长有关,光致发光谱范围在340～600 nm.     

Optical and microstructural investigations of porous silicon

Raman scattering and photoluminescence (PL) measurements on (100) oriented n-type crystalline silicon (c-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of c-Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the optical phonon in PS showed the redshift of the phonon frequency, broadening and increased asymmetry of the Raman mode on increasing the etching time. Using the phonon confinement model, the average diameter of Si nanocrystallites has been estimated as 2.9, 2.6 and 2.3 nm for 30, 60 and 90 min samples, respectively. Similar size of Si crystallites has been confirmed from the high resolution transmission electron microscopy (HRTEM). Using 2TO phonon mode intensity, we conjectured that the disordered Si region around the pores present in 30 min PS dissolved on etching for 90 min. The photoluminescence (PL) from PS increased in intensity and blue shifted with etching time from 2.1–2.3 eV. Blue shifting of PL is consistent with quantum confinement of electron in Si nanocrystallites and their sizes are estimated as 2.4, 2.3 and 2.1 nm for 30, 60 and 90 min PS, respectively which are smaller than the Raman estimated sizes due to temperature effect. Unambiguous dominance of quantum confinement effect is reported in these PS samples.     

浸泡后多孔硅的结构及光致发光特性

用电化学腐蚀方法制备了多孔硅样品,在浸泡液中浸泡使其表层多孔层与样品分离,在样品表面形成了丰富的SiO2包裹纳米硅颗粒结构,研究了样品的光致发光(PL)特性.结果表明,与剥离前相比,表层多孔层剥离后PL谱的强度约有10倍的增幅,峰位主要在蓝紫光范围内.在300℃干氧中退火后,样品的发光强度下降为退火前的三分之一,随着退火温度的升高,发光强度有所增强.退火前后有不同的发光机理,退火前光激发主要在纳米硅内,然后在二氧化硅层中的发光中心辐射复合;退火后光激发和光辐射都发生在二氧化硅层中.