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101.
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稀Bi半导体InPBi的光致发光(Photoluminescence, PL)主要来自缺陷能级跃迁过程,具有红外长波长、大线宽和高辐射强度等特点,因而引发广泛兴趣。针对InPBi的红外发光效率问题,本文研究了不同Bi组分InPBi的激发功率依赖红外PL光谱演化规律。实验发现,随着Bi组分增大,PL线型发生显著变化,导致发光波长总体红移;同时激发功率依赖的PL积分强度演化分析表明,发光效率随Bi组分先增大然后下降,在0.5%组分时发光效率达到峰值。发光效率增大一方面归因于Bi捕获空穴降低非辐射复合,另一方面来自Bi的表面活性剂效应;而高Bi组分引入过多缺陷从而抑制了Bi的优势,导致发光效率下降。这些结果或有助于理解InPBi的红外发射性能,表明InPBi具有红外光电子应用前景。 相似文献
103.
Kseniia A. Sergeeva Dmitrii V. Pavlov Albert A. Seredin Eugeny V. Mitsai Aleksandr A. Sergeev Evgeny B. Modin Anastasiia V. Sokolova Tsz Chun Lau Kseniia V. Baryshnikova Mihail I. Petrov Stephen V. Kershaw Aleksandr A. Kuchmizhak Kam Sing Wong Andrey L. Rogach 《Advanced functional materials》2023,33(44):2307660
In order to advance the development of quantum emitter-based devices, it is essential to enhance light-matter interactions through coupling between semiconductor quantum dots with high quality factor resonators. Here, efficient tuning of the emission properties of HgTe quantum dots in the infrared spectral region is demonstrated by coupling them to a plasmonic metasurface that supports bound states in the continuum. The plasmonic metasurface, composed of an array of gold nanobumps, is fabricated using single-step direct laser printing, opening up new opportunities for creating exclusive 3D plasmonic nanostructures and advanced photonic devices in the infrared region. A 12-fold enhancement of the photoluminescence in the 900–1700 nm range is observed under optimal coupling conditions. By tuning the geometry of the plasmonic arrays, controllable shaping of the emission spectra is achieved, selectively enhancing specific wavelength ranges across the emission spectrum. The observed enhancement and shaping of the emission are attributed to the Purcell effect, as corroborated by systematic measurements of radiative lifetimes and optical simulations based on the numerical solution of Maxwell's equations. Moreover, coupling of the HgTe photoluminescence to high quality factor modes of the metasurface improves emission directivity, concentrating output within an ≈20° angle. 相似文献
104.
室温下,InPBi表现出强而宽的光致发光光谱,其宽光谱特性来自于材料中的PIn反位深能级和与Bi相关的深能级。该特性使得InPBi有希望应用于制备光学相干层析扫描系统中的超辐射光源。文章利用透射电子显微镜和三维原子探针研究了InPBi薄膜材料的结构性能,发现Bi原子在InPBi薄膜中的分布极不均匀,在InPBi/InP界面出现了Bi的富集区,从该区域沿[001]方向出现了Bi的纳米面,此纳米面位于(110)平面上。这种Bi原子的富集分布阻碍了PIn反位参与的载流子复合过程,对InPBi的光学性能有显著的影响。研究结果可为制造光学相干层析扫描系统的超辐射发光二极管提供一定的理论基础。 相似文献
105.
A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics
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Stephen Boandoh Soo Ho Choi Ji‐Hoon Park So Young Park Seungho Bang Mun Seok Jeong Joo Song Lee Hyeong Jin Kim Woochul Yang Jae‐Young Choi Soo Min Kim Ki Kang Kim 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(39)
High‐quality and large‐area molybdenum disulfide (MoS2) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS2 film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS2 film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)6) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS2 film is readily achievable in 20 min. Large‐area MoS2 field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm2 V?1 s?1, which is the highest reported for bottom‐gated MoS2‐FETs fabricated via photolithography with an on/off ratio of ≈105 at room temperature. 相似文献
106.
Xiaoxia Wang Hong Zhou Shuangping Yuan Weihao Zheng Ying Jiang Xiujuan Zhuang Hongjun Liu Qinglin Zhang Xiaoli Zhu Xiao Wang Anlian Pan 《Nano Research》2017,10(10):3385-3395
High-performance multiphoton-pumped lasers based on cesium lead halide perovskite nanostructures are promising for nonlinear optics and practical frequency upconversion devices in integrated photonics.However,the performance of such lasers is highly dependent on the quality of the material and cavity,which makes their fabrication challenging.Herein,we demonstrate that cesium lead halide perovskite triangular nanorods fabricated via vapor methods can serve as gain media and effective cavities for multiphoton-pumped lasers.We observed blue-shifts of the lasing modes in the excitation fluence-dependent lasing spectra at increased excitation powers,which fits well with the dynamics of Burstein-Moss shifts caused by the band filling effect.Moreover,efficient multiphoton lasing in CsPbBr3 nanorods can be realized in a wide excitation wavelength range (700-1,400 nm).The dynamics of multiphoton lasing were investigated by time-resolved photoluminescence spectroscopy,which indicated that an electron-hole plasma is responsible for the multiphoton-pumped lasing.This work could lead to new opportunities and applications for cesium lead halide perovskite nanostructures in frequency upconversion lasing devices and optical interconnect systems. 相似文献
107.
Self‐Sealing Porous Silicon‐Calcium Silicate Core–Shell Nanoparticles for Targeted siRNA Delivery to the Injured Brain
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