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11.
12.
Ultra-fine aluminum nitride has been synthesized by the evaporation of aluminum powder at atmospheric-pressure nitrogen plasma in a hot-wall reactor.The average size of aluminum nitride particle is 0.11μm measured by scanning electric mirror(SEM),and the purity is at least over90% evaluated by X-Ray diffraction(XRD).The conversion of Al powder to aluminum nitride is strongly depended on the injection of NH3.Typical experimental parameters such as the feed rate of raw material,the flow rate of ammonia and the position of injecting aluminum powder into the reactor are given. 相似文献
13.
14.
本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。 相似文献
15.
Xiang Lu S. Sundar Kumar Iyer Jin Lee Brian Doyle Zhineng Fan Paul K. Chu Chenming Hu Nathan W. Cheung 《Journal of Electronic Materials》1998,27(9):1059-1066
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII)
for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high
cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation
of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous
buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique
is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant
in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen
induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure
combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force
which is sufficient to overcome the silicon fracture resistance. 相似文献
16.
N‐(4‐Acetoxyphenyl) maleimide (APMI) and three kinds of comonomers bearing a trimethylsilyl group were copolymerized at 60°C in the presence of azobisisobutyronitrile (AIBN) as an initiator in 1,4‐dioxane to obtain the three IP, IIP, and IIIP copolymers. These copolymers were removed from the acetoxy group in a transesterification process into new IVP, VP, and VIP copolymers with a pendant hydroxyl group. Two modified processes were adopted to prepare photoresists using these copolymers. The first process involved mixing the dissolution inhibitor, o‐nitrobenzyl cholate, with the new copolymers. Second, o‐nitrobenzyl cholate was introduced into the copolymers using 1,8‐diazabicyclo[5.4.0]undec‐7‐ene (DBU) in dimethylformamide (DMF). The cyclic maleimide structure is responsible for the high thermal stability of these copolymers. After irradiation using deep–UV light and development with aqueous Na2CO3 (0.01 wt %), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of these resists was at least 0.8 μm and an oxygen‐plasma etching rate was 1/5.3 to that of hard‐baked HPR‐204. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 2791–2798, 2002; DOI 10.1002/app.10255 相似文献
17.
S. P. Ashburn M. C. Öztürk J. J. Wortman G. Harris J. Honeycutt D. M. Maher 《Journal of Electronic Materials》1992,21(1):81-86
Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited
by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid
thermal annealing in either Ar or N2 ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The
sheet resistance was found to be dependent on annealing ambient (Ar or N2) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides
were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe2 and Co2Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti6Ge5 phase forms prior to TiGe2. The TiGe2 phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures
(425° C); however, the stability of the material is poor at elevated temperatures. 相似文献
18.
采用非平衡等离子体与光催化剂相结合,对苯的降解进行了实验研究。考察了以不同吸附能力的玻璃球和γ-Al2O3为载体对苯降解率、碳平衡、CO2选择性、NOx及O3生成量的影响;研究了以γ-Al2O3为载体时,水蒸气含量对苯的降解率、碳平衡、CO2选择性、NOx及O3生成量的影响。实验结果表明,以具有吸附性的γ-Al2O3为载体可提高苯的降解率;当能量密度为618J/L时,苯的降解率可达98%;同时可降低O3的生成量,但NOx生成量增加;以γ-Al2O3为载体时,随水蒸气含量的增加,苯的降解率降低,特别是在低能量密度时,水蒸气对苯降解率的影响更为显著,但水蒸气的加入可抑制O3的生成,同时可提高碳平衡值。 相似文献
19.
A new type of arc plasma reactor with 12-phase alternating current (AC) discharge for synthesis of carbon nanotubes (CNTs) is proposed. A couple of six discharge electrodes by which have mutually electrical connection between them to enlarge the high-temperature regions in the reactor are arranged to three-dimensional locations. A new method of CNTs fabrication by this reactor, which accomplishes to enlarge the suitable growth region in high purity and at high yield, was developed. 相似文献
20.
We analyze the wear resistance of plasma coatings for a constant work of friction. The dependences of the wear resistance
of the coatings are obtained for a broad range of loading conditions. It is shown that the minimum sensitivity to loading
conditions is exhibited by the molybdenum coatings. It is also established that the wear resistance of the coatings decreases
as the amplitude of displacements increases and the cyclic frequency of the tests decreases due to the intensification of
fatigue processes on the surfaces. The comparative characteristics of coatings are presented.
__________
Translated from Problemy Prochnosti, No. 5, pp. 94–100, September–October, 2007. 相似文献