真空蒸发沉积VOPc薄膜及磁场对薄膜结构与性能的影响

用真空蒸发制备了酞菁氧钒 (VOPc)薄膜 ,并在磁场中进行了热处理。用X光电子能谱、X射线衍射、紫外 可见吸收光谱、原子力显微镜等手段对制备的薄膜进行了表征。结果表明沉积的酞菁氧钒薄膜为α 型 ,成分接近酞菁氧钒的分子式。制备的薄膜在磁场中进行了热处理 ,发现磁场使酞菁氧钒薄膜性质发生改变 :UV VIS吸收谱Q带发生红移 ;XRD谱图衍射峰强度明显增强 ,峰位略有变化 ;原子力显微镜 (AFM)分析发现晶粒大小无明显变化。以上结果说明磁场的存在使得VOPc分子在热处理过程中发生了定向的排列     

Investigation of the Correlation between Texture and Microstructure on a Submicrometer Scale in the TEM

In recent years the investigation of local texture and microstructure by analysis of electron backscatter diffraction patterns (EBSP) in the SEM has become a very powerful and popular method. With the introduction of SEM with field emission guns (FEG) the spatial resolution of EBSP measurements could be enhanced from 500 nm with a tungsten emitter to better than 50 nm. This evolution of SEM techniques raises the question whether transmission electron microscopy (TEM) still has fields of application in texture research. The present article answers this question with a clear “yes” and presents three examples of investigations where TEM is indispensable. The three examples comprise the investigation of the correlation between dislocation structure and deformation texture, a study on nucleation mechanisms of recrystallization in highly deformed metals and the investigation of microtexture and microstructure in nanocrystalline materials. Together with the presentation of these cases some of the necessary measurement techniques are described briefly. It is shown that TEM has to be applied when highest spatial resolution of orientation determination and imaging and high accuracy of orientation determination are to be reached, when the three‐dimensional and quantitative characterization of lattice defects is required or when materials with a high density of lattice defects are to be investigated.     

高温超高压处理HDPE的WAXD及FT－IR研究

用ＷＡＸＤ和ＦＴ－ＩＲ对高温超高压处理前后的ＨＤＰＥ进行了研究。发现经５．０ＧＰａ的高压处理或２００℃下４．０ＧＰａ的高压同时处理后的ＨＤＰＥ分子链的化学结构未发生变化。ＨＤＰＥ晶体中（２００）面与（１１０）面衍射峰的峰高比（γ）随着压力的升高而增大，表明ＨＤＰＥ分子链在超高压作用下发生了取向排列，且升高温度更有利于这种取向排列，但当压力增大至５．０ＧＰａ及温度升高至２００℃时，γ反而大幅度下降。     

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a...     

On the dissipation process in Bi2Sr2Ca2Cu3O10 tapes and bulk samples with preferential grain orientation in zero external magnetic field

Current-voltage characteristics of Bi₂Sr₂Ca₂Cu₃O₁₀ tapes and bulk samples with preferentially oriented crystallites have been measured in zero applied magnetic field and for temperatures close to the mean-field critical-temperature,T _c0. It was shown that the power-law dependence,V=AI ^a, valid for two-dimensional systems, does not correctly describe the data, which clearly indicate the existence of a finite critical-current density,J _c. The experimentalI-V curves are fitted quite well with the model which attributes the finite critical-current density to the coupling between the CuO₂ double layers. It was found thatJ _c vanishes at a temperature value belowT _c0. This behavior can result from the occurrence of vortex fluctuation-induced layer decoupling and/or from the contribution of entropy to the vortex unbinding process.     

Electric and dielectric properties of solution-gas interface-grown PbS films

Dielectric properties andI–V characteristics of solution-gas interface-formed PbS thin-film capacitors (Al/PbS/Al) of various thicknesses have been studied in the frequency range 10-10⁶ Hz at various temperatures (300–443 K). Current-voltage (I–V) characteristics show space-charge-limited conduction. Dielectric constant (ε) increases with increasing film thickness and temperature and decreases with increase of frequency. The loss factor (tanδ) peaks observed in tanδ vs frequency and tanδ vs temperature reveal relaxation effect from dipolar orientation. These maxima shift to higher-temperature region with increasing frequency. The large increase in capacitance (C) and dielectric constant (ε) towards low-frequency (f) region indicates the possibility of an interfacial polarization mechanism in this region.     

The operational semantics of user-defined relationships in object oriented database systems

In semantic data models, abstract relationship (e.g. generalization, aggregation, etc.) semantics are defined, specifying how insertion, deletion and modification operations made at a higher level of abstraction can affect the objects abstracted over and vice versa. These semantics, also known as structural constraints, are expressed through so-called update rules. This perspective has been somewhat lost in most object-oriented systems, where user-defined relationships are supported as simple pointers and their semantics are embedded, distributed and replicated within the operations accessing these pointers. This paper inherits and extends the treatment of relationships found in semantic data models to behavioural object-oriented models by presenting an approach to uniformly capture the update rules for user-defined relationships. The stress is not on supporting relationships as first-class objects, but on describing their update rules (or operational semantics) through a set of constructors namely, reaction, anticipation, delegation and exception. The approach has been borne out by an implementation in an active object-oriented database system.     

Models and observations of fcc/bcc interfaces

Whereas models of the structure and periodicity of CSL or near CSL high angle grain boundaries are relatively well developed and have been to some extent verified by experiment, the nature of more general (e.g. fcc/bcc) interfaces is very imperfectly understood. One of the major differences between homo- and heterophase boundaries is the occurrence, in the latter case, of reproducible orientation relationships due to the crystallographic requirements of phase transformation (e.g. a glissile interface for martensitic growth, low energy interfaces for classical nucleation). A review is given of the relationships commonly observed to obtain between fcc and bcc crystals (as well as ordered phases based upon these structures). Within a given relationship, it is possible to use models of the available interfaces to predict their dislocation content; the success of the various approaches is considered. It is shown that the dislocation arrays identified on fcc/bcc boundaries are consistent with the occurrence of a primary structural relaxation, but that the latter does not appear to be complete. Possible reasons for this are discussed, together with the extent to which secondary structural models may be applicable. Attempts to rationalize the observed orientation relationships and morphologies are discussed, and it is pointed out that these all rely on searches for situations of minimum primary misfit, but that the way in which the latter is quantified determines the results of the analyses. Nevertheless, the implication is that the primary misfit does appear to determine the actual behaviour, though no structural or mechanistic conclusions can safely be drawn from this observation.     

软式操纵系统空间定位算法研究

针对软式操纵系统各构件的空间特性,采用适当的定位算法,将三维问题简化为二维问题进行解析求解,不仅降低了计算的复杂度,而且很好的满足了精度要求.由于能够用简单的解析式表达,所以便于计算机程序实施和推广.算例证实该算法可靠、精确,具有一定的工程应用价值.     

升华再结晶法制备AIN晶须及其生长特性

以AIN粉体为原料，加入适量的CaO-B2O3矿化剂，采用升华再结晶法制备AIN晶须．初步探讨了反应器及其合成温度对产物种类的影响，研究了晶须的结构特征及其生长机理．结果表明，初期的合成产物包括AIN晶柱、晶须和非晶AIN纤维，以VLS机制生长：后期产物为AIN晶须，表现为VS生长机制：XRD及TEM分析表明，晶须大多呈现沿｛2110｝、｛101l｝和｛0001｝，l＝0、1、2、3的晶面生长．多数晶须宏观生长轴向平行于这些晶面的法线，而部分晶须由于发生斜生长，导致宏观生长轴向与这些晶面的法线斜交．