基于统计过程控制的水清洗控制系统

为了将水清洗机接入工业网络并实现智能自动化控制,本文提出了一种基于统计过程控制(SPC)可重构程序的水清洗控制系统.该系统根据水清洗设备的参数和组件特性构建了该设备的控制协议;根据协议指令制定了指令判断模块;根据SPC理论设计了过程控制模块.控制协议让该系统的清洗程序具有重构和联网的功能;指令判断模块为重构后的指令提供了安全性保障;过程控制模块让该系统的清洗过程具备动态调整清洗组件的功能.这些功能使得该设备可以实现智能自动化控制.通过测试,该系统比原有系统的清洗次数平均减少了15%,水清洗液的使用率提升了约5%,并扩展了3项功能,提高了设备的利用率和智能化水平,最终满足节能省水、多用途和联网的需求.     

Direct Freeform Laser Fabrication of 3D Conformable Electronics

3D conformable electronic devices on freeform surfaces show superior performance to the conventional, planar ones. They represent a trend of future electronics and have witnessed exponential growth in various applications. However, their potential is largely limited by a lack of sophisticated fabrication techniques. To tackle this challenge, a new direct freeform laser (DFL) fabrication method enabled by a 5-axis laser processing platform for directly fabricating 3D conformable electronics on targeted arbitrary surfaces is reported. Accordingly, representative laser-induced graphene (LIG), metals, and metal oxides are successfully fabricated as high-performance sensing and electrode materials from different material precursors on various types of substrates for applications in temperature/light/gas sensing, energy storage, and printed circuit board for circuit. Last but not the least, to demonstrate an application in smart homes, LIG-based conformable strain sensors are fabricated and distributed in designated locations of an artificial tree. The distributed sensors have the capability of monitoring the wind speed and direction with the assistance of well-trained machine-learning models. This novel process will pave a new and general route to fabricating 3D conformable electronic devices, thus creating new opportunities in robotics, biomedical sensing, structural health, environmental monitoring, and Internet of Things applications.     

Diamond semiconductor and elastic strain engineering

Diamond,as an ultra-wide bandgap semiconductor,has become a promising candidate for next-generation microelec-tronics and optoelectronics due to its numerous advantages over conventional semiconductors,including ultrahigh carrier mo-bility and thermal conductivity,low thermal expansion coefficient,and ultra-high breakdown voltage,etc.Despite these ex-traordinary properties,diamond also faces various challenges before being practically used in the semiconductor industry.This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes,high-power/high-frequency field-effect transistors,MEMS/NEMS,and devices operating at high temperatures.Following that,we will discuss recent developments to address scalable diamond device applications,emphasizing the synthesis of large-area,high-quality CVD diamond films and difficulties in diamond doping.Lastly,we show potential solutions to modulate diamond’s electronic properties by the“elastic strain engineering”strategy,which sheds light on the future development of diamond-based electronics,photonics and quantum systems.     

Metal Micropatterning by Triboelectric Spark Discharge

Metal micropatterns play critical roles in flexible electronics. However, the lack of versatile strategies for micropatterning of diverse metal materials on various thin, flexible or stretchable substrates has limited the rapid development of flexible electronics. Here, a metal micropatterning method by triboelectric spark discharge under atmospheric environment is developed, where a triboelectric nanogenerator (TENG) is employed to precisely and safely control the voltage, current, and frequency of the spark discharges. Micropatterns of metal films like gold, silver, copper, aluminum and platinum are successfully fabricated on substrates of polyimide, polyethylene terephthalate, polyvinyl chloride, polydimethylsiloxane, paper or latex, even on ultrathin substrates (5 μm thick) without damage, where the feature sizes of metal patterns are controllable from 20 μm to 1 mm. Experimental insights into the triboelectric spark discharge behaviors and the pattern feature sizes control are discussed. A straightforward fabrication of metal patterns on the balloon surface or human skin through “handwriting” by a pencil as discharge electrode is realized. Besides metals, extended processibility of conductive materials like carbon nanotubes, graphene, MXene, graphite, carbon fibers, and conductive polymers are also demonstrated. This work proves the possibility of microfabrication by TENG, which is of simplicity and attractiveness for flexible electronics.     

Inkjet‐Printed Lithium–Sulfur Microcathodes for All‐Printed,Integrated Nanomanufacturing

Improved thin‐film microbatteries are needed to provide appropriate energy‐storage options to power the multitude of devices that will bring the proposed “Internet of Things” network to fruition (e.g., active radio‐frequency identification tags and microcontrollers for wearable and implantable devices). Although impressive efforts have been made to improve the energy density of 3D microbatteries, they have all used low energy‐density lithium‐ion chemistries, which present a fundamental barrier to miniaturization. In addition, they require complicated microfabrication processes that hinder cost‐competitiveness. Here, inkjet‐printed lithium–sulfur (Li–S) cathodes for integrated nanomanufacturing are reported. Single‐wall carbon nanotubes infused with electronically conductive straight‐chain sulfur (S@SWNT) are adopted as an integrated current‐collector/active‐material composite, and inkjet printing as a top‐down approach to achieve thin‐film shape control over printed electrode dimensions is used. The novel Li–S cathodes may be directly printed on traditional microelectronic semicoductor substrates (e.g., SiO₂) or on flexible aluminum foil. Profilometry indicates that these microelectrodes are less than 10 µm thick, while cyclic voltammetry analyses show that the S@SWNT possesses pseudocapacitive characteristics and corroborates a previous study suggesting the S@SWNT discharge via a purely solid‐state mechanism. The printed electrodes produce ≈800 mAh g^?1 S initially and ≈700 mAh g^?1 after 100 charge/discharge cycles at C/2 rate.