Monitoring the Dynamic Process of Formation of Plasmonic Molecular Junctions during Single Nanoparticle Collisions

The capability to study the dynamic formation of plasmonic molecular junction is of fundamental importance, and it will provide new insights into molecular electronics/plasmonics, single‐entity electrochemistry, and nanooptoelectronics. Here, a facile method to form plasmonic molecular junctions is reported by utilizing single gold nanoparticle (NP) collision events at a highly curved gold nanoelectrode modified with a self‐assembled monolayer. By using time‐resolved electrochemical current measurement and surface‐enhanced Raman scattering spectroscopy, the current changes and the evolution of interfacial chemical bonding are successfully observed in the newly formed molecular tunnel junctions during and after the gold NP “hit‐n‐stay” and “hit‐n‐run” collision events. The results lead to an in‐depth understanding of the single NP motion and the associated molecular level changes during the formation of the plasmonic molecular junctions in a single NP collision event. This method also provides a new platform to study molecular changes at the single molecule level during electron transport in a dynamic molecular tunnel junction.     

Inorganic-Based Printed Thermoelectric Materials and Devices

One of the simplest ways to generate electric power from waste heat is thermoelectric (TE) energy conversion. So far, most of the research on thermoelectrics has focused on inorganic bulk TE materials and their device applications. However, high production costs per power output and limited shape conformity hinder applications of state-of-the-art thermoelectric devices (TEDs). In recent years, printed thermoelectrics has emerged as an exciting pathway for their potential in the production of low-cost shape-conformable TEDs. Although several inorganic bulk TE materials with high performance are successfully developed, achieving high performance in inorganic-based printed TE materials is still a challenge. Nevertheless, significant progress has been made in printed thermoelectrics in recent years. In this review article, it is started with an introduction signifying the importance of printed thermoelectrics followed by a discussion of theoretical concepts of thermoelectricity, from fundamental transport phenomena to device efficiency. Afterward, the general process of inorganic TE ink formulation is summarized, and the current development of the inorganic and hybrid inks with the mention of their TE properties and their influencing factors is elaborated. In the end, TEDs with different architecture and geometries are highlighted by documenting their performance and fabrication techniques.     

Electrical and Mechanical Behavior of Aerosol Jet–Printed Gold on Alumina Substrate for High-Temperature Applications

There is a growing interest in the development of microelectronics that can perform reliably and robustly at temperatures above 300 °C. Such devices require stable thermal properties, low thermal drift, and thermal cycling resistance. Conventional hybrid circuit technology demonstrates high-temperature packages, but the high costs and lead time are significant drawbacks. In contrast, additive manufacturing processes, including aerosol jet printing (AJP), offer cost and time benefits, as well as 3D structures and embedded features. However, the properties and reliability of additive packaging materials at extreme temperatures are not well known. Herein, the reliability at temperatures up to 750 °C in terms of electrical performance and mechanical strength of aerosol jet printed gold thick films onto ceramic substrates are assessed. Thermal coefficient of resistance of printed gold films is measured. The electrical resistance stability and leakage current of printed gold structures are also characterized during over 100 h of aging at temperatures up to 750 °C. Finally, the mechanical adhesion strength of the printed gold films is evaluated after aging for 100 h at temperatures up to 750 °C. The adhesion of the printed gold to the ceramic substrates remains high after aging, very stable resistances and minimal leakage currents have been observed.     

A dual‐broadband circularly polarized halved falcate‐shape printed monopole antenna

A halved falcate‐shape dual‐broadband circularly polarized printed monopole antenna is proposed. To generate the equal amplitude orthogonal modes, two halved falcate‐shaped antenna are used. Also, to provide the 90° phase difference between the two modes, three stubs are used in the ground plane of the antenna. The proposed antenna provides 22.6 (1.36–1.72 GHz) and 44.4% (5.25–8.25 GHz) 3 dB axial ratio bandwidth over the lower and upper bands, respectively. By adjusting the parameters of the antenna, the lower and upper band center frequencies can be tuned individually. The proposed antenna is fabricated, and results are compared with those of the simulation. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

Flexible amorphous‐silicon non‐volatile memory

Abstract— The development of a flexible, rewritable, non‐volatile memory (NVM) that is implemented on a standard, low‐temperature a‐Si:H process without additional mask steps is reported. This NVM is a part of a flexible‐display system. Each NVM cell is composed of differentially configured thin‐film‐transistors (TFTs). The cell reads out one of two stable states depending on the relative threshold voltages of the differentially configured TFTs. Information is stored in each cell by increasing the threshold voltage of one differential TFT or the other, utilizing the well‐known electrical‐stress degradation intrinsic to a‐Si:H TFTs. The stored information is retained indefinitely with no applied power. A test array of individually addressable NVM cells has been successfully fabricated and tested on flexible stainless‐steel substrates. Read and write operation, as well as preliminary reliability measurements, are described. The design is readily scalable to large memory arrays.     

Temporary bond—debond technology for high‐performance transistors on flexible substrates

Abstract— A processing technology based upon a temporary bond—debond approach has been developed that enables direct fabrication of high‐performance electronic devices on flexible substrates. This technique facilitates processing of flexible plastic and metal‐foil substrates through automated standard semiconductor and flat‐panel tool sets without tool modification. The key to processing with these tool sets is rigidifying the flexible substrates through temporary bonding to carriers that can be handled in a similar manner as silicon wafers or glass substrates in conventional electronics manufacturing. To demonstrate the power of this processing technology, amorphous‐silicon thin‐film‐transistor (a‐Si:H TFT) backplanes designed for electrophoretic displays (EPDs) were fabricated using a low‐temperature process (180°C) on bonded‐plastic and metal‐foil substrates. The electrical characteristics of the TFTs fabricated on flexible substrates are found to be consistent with those processed with identical conditions on rigid silicon wafers. These TFTs on plastic exhibit a field‐effect mobility of 0.77 cm²/V‐sec, on/off current ratio >10⁹ at Vds = 10 V, sub‐threshold swing of 365 mV/dec, threshold voltage of 0.49 V, and leakage current lower than 2 pA/μm gate width. After full TFT‐array fabrication on the bonded substrate and subsequent debonding, the flexible substrate retains its original flexibility; this enables bending of the EPD display without loss in performance.