Simultaneous Measurement of Viscosity and Density with an Oscillating-Disk Instrument: The Effect of Fixed Plates

The period and damping of the free motion of a body oscillating in a fluid depend on the fluid's viscosity and density. Commonly, a working equation which expresses the damping as a function of the viscosity and density is solved for the viscosity, the damping being measured and the density being treated as an independently supplied parameter. Another working equation exists for the period, and, in general, the period depends on a combination of the viscosity and the density which is linearly independent of the combination that appears in the damping equation. It is, therefore, in principle, possible to determine both the viscosity and the density by a simultaneous solution of the two coupled working equations, since the period also is measured. In this paper, the working equations that describe the oscillating-disk viscometer are reviewed and their simultaneous solution is considered. The effect of fixed plates symmetrically located above and below the oscillating disk is of specific interest. The paper's main result is that fixed plates can dramatically increase the independence of the damping and period working equations, so that it becomes indeed feasible to determine the viscosity and the density of a fluid simultaneously from the damping and period of oscillating motion. A price is paid, however, because the instrument's working equations when plates are present have multiple solutions. Under special conditions, these multiple solutions can coalesce, and then one can only deduce the viscosity from the damping equation if the density is known a priori.     

新型的芯片间互连用CMOS/BiCMOS驱动器

从改善不同类型 IC芯片之间的电平匹配和驱动能力出发 ,设计了几例芯片间接口 (互连 )用 CMOS/Bi CMOS驱动电路 ,并提出了采用 0 .5 μm Bi CMOS工艺 ,制备所设计驱动器的技术要点和元器件参数。实验结果表明所设计驱动器既具有双极型电路快速、大电流驱动能力的特点 ,又具备 CMOS电路低压、低功耗的长处 ,因而它们特别适用于低电源电压、低功耗高速数字通信电路和信息处理系统。     

试油井产量折算新方法

为了使试油折算产量的条件尽可能的相同,增强试油产量的可比性,消除地面计量的人为误差,研究了试油求产时井底流压的变化规律,认为采用油柱在油管内上升的流压变化速率来折算产量更趋于合理,并能最大限度地接近地层真实产量.该方法从根本上消除了因试油周期选定不合理、地面计量误差,以及试油工艺不同、储层条件差异带来的试油产量误差.     

大坝监测自动化中的人工比测研究

阐述了人工比测的概念、方式和数据分析方法,对人工比测及数据分析中应注意的问题也进行了深入研究。     

Improving the Calibration of Vacuum Gas Flow – Control Leak Gauges

A new and original method of calibrating helium leaks that makes it possible to take into account the existence of a number of auxiliary phenomena is described. For this purpose, a hollow leak the purpose of which is to reproduce only desorbed gas flows, is introduced into the vacuum system of the calibration bench. Analysis of the results of corresponding cumulation measurements makes it possible to introduce corrections for these phenomena.     

Measurement and Identification of the Parameters of SPICE-Models of a Bipolar Transistor

A method of measuring and identifying the static parameters of a bipolar transistor is considered. The characteristic of the transistor, from which the parameters of the model are determined, is chosen depending on what group the calculated parameters belong to. The characteristics are measured in such a way that the equations of the model describing them can be reduced to the simplest form.     

复合材料空心飞轮多环套装整体变形及应力简化精细分析

采用多环过盈装配是解决复合材料飞轮径向强度过低的有效途径之一。本文作者采用平面应力简化模型,提出了计及过盈配合后变形导致实际过盈量增大计算飞轮套装后的初终应力分布的方法;提出了基于叠加原理计算多环过盈装配旋转飞轮应力的方法;提出了保证飞轮旋转时配合界面不脱离的相关临界转速的概念和计算方法。算例分析表明:过盈配合后的变形对初终应力的影响不能忽略;过盈量和套装环数与飞轮的初终应力和相关临界转速有密切的关系。     

连续波雷达测距中的解模糊技术

研究连续波雷达测距中的距离模糊问题，分析几种常用解模糊方法的性能，并讨论参差比的选取对测距范围的影响。     

油井参数对超声透射系数的影响

为了研究油井各参数对超声波透射系数的影响，根据超声波在媒质中的波函数和边界条件，求出了油井中超声波的透射系数。当井液和水泥层的声速和密度增大时，超声波的透射系数也随之增大，但变化幅度不大，特别是水泥层密度对超声波的透射系数影响很小；当岩层的声速增大时，超声波的透射系数会出现一个极大值；岩层密度对超声波的透射系数影响较大，且随岩层密度的增大超声波的透射系数随之降低。     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.