An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = -3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented. 相似文献
In order to optimize and improve the design of power devices with improved surge current safe operating area it is necessary to obtain a good correlation between measured and simulated space and time resolved temperature distributions. Therefore, an IR microscope capable of measuring the space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions has been developed. The minimum detectable spot size is 15 μm, while the signal rise time is detector limited to about 1 μs. The lower temperature detectivity limit is about 10°C over room temperature.
Using this instrument dynamic thermal phenomena in fast recovery 3.3 kV Si power diodes having radiation-induced recombination centers [Proceedings of the 7th EPE, Trondheim, 1997] subjected to 1.2 ms 400–2000 A/cm2 and 0.3–2 ms 2000 A/cm2 current pulses have been studied. The experimental results have been compared to results from 2D device simulations including surface recombination and carrier lifetime temperature dependence. The agreement between experimental and device simulation results (i.e. dynamic IV characteristics and time and space resolved temperature distributions) is very good up to a peak current density of 1500 A/cm2, and a reasonable good one for peak current densities up to 2000 A/cm2 (1.2 ms current pulses). 相似文献
Using a custom-designed self-heating apparatus and procedure, activation energy (Ea) was determined for four sulfide-bearing materials: two nickel concentrates, a copper concentrate and a sphalerite/pyrite mixture. The Ea ranged from 22-29 kJ mol−1, implying a common reaction. Comparing to literature, the Ea values correspond to partial oxidation of hydrogen sulfide, supporting the contention that H2S may be an intermediate product in the self-heating of sulfide minerals. 相似文献