To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator(SGOI) n-type metal-oxide-semiconductor field-effect transistors(nMOSFETs),this paper proposes a novel device called double step buried oxide(BOX) SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from... 相似文献
Electromigration (EM) is a severe reliability issue in power grid networks.The via array possesses special EM characteristics and suffers from Joule heating and current crowding,closely related to EM violations.In this study,a power grid EM analysis method was developed to solve temperature variation effects for the via array EM.The new method is based on the temperature-aware EM model,which considers the effects of self-heating and thermal coupling of interconnected lines in a power grid.According to the model,the proposed methodology introduces a locality-driven strategy and current tracking to perform full-chip EM assessment for multilayered power grids.The results show that temperature due to Joule heating indeed has significant impacts on the via EM failure.The results further demonstrate that the proposed method might reasonably improve efficiency while ensuring the accuracy of the analysis. 相似文献
Semiconductor devices development, design and optimization require the use of computer simulation tools able to predict the entire device safe operating area (SOA), something that it is not always possible due to limitations in some of the physical models in predicting certain properties of device operation under extreme conditions (i.e. high carrier injection levels and high temperature). In order to improve our understanding of device operation under these extreme conditions experimental data of the dynamic IV characteristics and temperature time evolution and space distribution are required. The experimental data obtained are then used in the development of improved physical models and simulation tools.
In this work, dynamic surface temperature measurements as a function of current pulse peak density and length were performed on SiC-PiN epitaxial power diodes. The measurements were carried out using an infrared (IR) microscope developed in our lab capable of measuring space and time surface temperature distributions in semiconductor devices operating under self-heating conditions [Solid State Electron 2001;45(12):2057]. The minimum detected spot size is 15 μm, while the signal raising time is detector limited to about 1 μs. The lowest detectable temperature increment is at least 10 °C over room temperature.
Using this instrument, dynamic thermal phenomena in 4.5 kV SiC-PiN epitaxial power diodes [Mater Sci Forum 2001;353–356:727] subjected to 1 ms long 100–6000 A/cm2 and 0.1–5 ms long 3000 A/cm2 current pulses have been studied. The possibility of obtaining dynamic surface temperature information from SiC electronic devices operating under self-heating conditions with time constants in the order of ms is demonstrated. 相似文献