橡胶隔震支座温度相关性的研究进展

随着隔震技术的发展,橡胶支座隔震体系的应用环境日趋复杂,温度对隔震体系性能的影响逐渐成为工程界和学术界关注的重点.通过对比多种常用的可以考虑复杂因素的支座力学模型,发现其均不能模拟温度因素的影响.整理了橡胶及橡胶隔震支座温度相关性的研究,总结指出温度对橡胶隔震支座性能的影响主要包括低温瞬时硬化、低温结晶硬化及滞回生热等...     

温度控制对大型转炉铜锍吹炼的影响

转炉铜锍吹炼是个自热过程,温度过高、过低对炉龄、单炉产量及产品质量控制有至关重要的影响。通过对大型转炉铜锍吹炼过程造渣和造铜阶段的温度统计,结合现场实际炉况表现,总结得出温度控制对铜锍吹炼的影响及温度控制的具体措施。实验结果表明:造渣初期、中期及末期温度温度分别控制在1110~1160℃、1150~1210℃和1195~1260℃时,造渣效果最佳;造铜前期和末期温度控制在1160~1210℃和1180~1200℃时,造铜效果最好。同时为转炉铜锍吹炼更好的利用自身余热增加冷料处理量、保护炉衬及确保渣型提高粗铜质量提供借鉴意义。     

应用于硅基等离子天线的LPIN二极管的自加热效应

介绍了LPIN二极管及其在硅基等离子天线方面的应用,从理论上分析了LPIN二极管自加热效应及其对本征区载流子浓度的影响.仿真分析了不同SOI埋层材料对LPIN二极管本征区载流子浓度的影响.仿真结果显示,LPIN二极管的自加热效应会降低其本征区载流子浓度,通过改变埋层的材料,增加埋层的热导率,可以减弱自加热效应,从而增加本征区载流子浓度,提高硅基等离子天线效率.     

SOI MOSFET自加热效应测试方法

为研究自加热效应对绝缘体上硅(SOI)MOSFET漏电流的影响,开发了一种可同时探测20 ns时瞬态漏源电流-漏源电压(Ids-Vds)特性和80μs时直流静态Ids-Vds特性的超快脉冲I-V测试方法。将被测器件栅漏短接、源体短接后串联接入超快脉冲测试系统,根据示波器在源端采集的电压脉冲的幅值计算漏电流受自加热影响的动态变化过程。选取体硅NMOSFET和SOI NMOSFET进行验证测试,并对被测器件的温度分布进行仿真,证实该方法用于自加热效应的测试是准确有效的,能为建立准确的器件模型提供数据支撑。采用该方法对2μm SOI工艺不同宽长比的NMOSFET进行测试,结果表明栅宽相同的器件,栅长越短,自加热现象越明显。     

Influence of organic and inorganic properties of coal-shale on spontaneous combustion liability

Coal and coal-shale undergo low-temperature oxidation when exposed to air, potentially leading to spontaneous combustion. Coal-shale found in association with coal seams vary considerably in their intrinsic properties and spontaneous combustion liability index. Fourteen coal-shale samples collected from four different coal mines in Witbank Coalfield, South Africa, were experimentally investigated. The influence of coal-shale intrinsic properties and spontaneous combustion liability indices (determined by the Wits-Ehac Index and the Wits-CT Index) were established. The liability indices indicate relationships with the intrinsic factors and thus, identifying the major intrinsic factors affecting liability toward spontaneous combustion in these coal-shale samples. The XRF analysis indicated that the coal-shale samples are rich in SiO₂, Al₂O₃ and Fe₂O₃, while the XRD showed that same coal-shale samples are generally dominated with kaolinite and quartz. The coal-shale occurred in association with medium Rank C bituminous coal and contained varying proportion of macerals. The Wits-Ehac Index was unable to reliably determine liability indices of some coal-shale samples, and hence the Wits-CT Index was developed. The results obtained from the characterisation tests may be used as a tool to predict the spontaneous combustion liability in carbonaceous material and may serve as a reference when comparing coal-shale from different coal mines.     

采用局域注氧技术制备的新型DSOI场效应晶体管的热特性

通过局域注氧工艺,在同一管芯上制作了DSOI、体硅和SOI三种结构的器件.通过测量和模拟比较了这三种结构器件的热特性.模拟和测量的结果证明DSOI器件与SOI器件相比,具有衬底热阻较低的优点,因而DSOI器件在保持SOI器件电学特性优势的同时消除了SOI器件严重的自热效应.DSOI器件的衬底热阻和体硅器件非常接近,并且在进入到深亚微米领域以后能够继续保持这一优势.     

通孔对金属连线温度分布的影响

详细讨论了考虑通孔自热的金属连线温度分布模型,并通过该模型,计算了不同通孔直径和高度情况下,单一及并行金属连线的温度分布。计算结果表明,通孔直径和通孔高度及并行金属连线间的热耦合对金属连线温度分布有重大的影响。     

以Si3N4为埋层的SOI结构制备与器件模拟

为了减少经典SOI器件的自加热效应,首次成功地用外延方法制备以Si3N4薄膜为埋层的新结构SOSN,用HRTEM和SRP表征了SOI的新结构.实验结果显示,Si3N4层为非晶状态,新结构的SOSN具有良好的结构和电学性能.对传统SOI和新结构SOI的MOSFETs输出电流的输出特性和温度分布用TCAD仿真软件进行了模拟.模拟结果表明,新结构SOSN的MOSFET器件沟道温度和NDR效益都得到很大的降低,表明SOSN能够有效地克服自加热效应和提高MOSFET漏电流.     

Fabrication and Simulation of Silicon-on-Insulator Structure with Si3N4 as a Buried Insulator

In order to minimize the self-heating effect of the classic SOI devices,SOI structures with Si3N4 film as a buried insulator (SOSN) are successfully formed using epitaxial layer transfer technology for the first time.The new SOI structures are investigated with high-resolution cross-sectional transmission electron microscopy and spreading resistance profile.Experiment results show that the buried Si3N4 layer is amorphous and the new SOI material has good structural and electrical properties.The output current characteristics and temperature distribution are simulated and compared to those of standard SOI MOSFETs.Furthermore,the channel temperature and negative differential resistance are reduced during high-temperature operation,suggesting that SOSN can effectively mitigate the self-heating penalty.The new SOI device has been verified in two-dimensional device simulation and indicated that the new structures can reduce device self-heating and increase drain current of the SOI MOSFET.     

Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress

The temperature distribution of typical n-type polycrystalline silicon thin film transistors under self-heating (SH) stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density, substrate material, and channel width on device temperature distribution is analyzed. This study is helpful to understand the mechanism of SH degradation, and to effectively alleviate the SH effect in device operation. __________ Translated from Journal of Semiconductors, 2008, 29(5): 954–959 [译自: 半导体学报]