Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating

The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V^?1 s^?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).     

高温处理对镍诱导晶化硅上的薄膜晶体管性能的影响

采用标准双栅 CMOS工艺在镍诱导非晶硅横向晶化形成的多晶硅上制造了高性能的薄膜晶体管 ,并详细研究了器件制备前高温预处理对薄膜晶体管性能的影响 .实验发现不同的温度处理 ,将引起器件性能的显著变化 .在10 0 0℃预处理温度下获得了最好的器件性能 .10 0 0℃在 NMOS管中测得的电子迁移率达 314 cm2 / (V· s) ,分别比在 110 0℃和未做高温处理下的大 10 %和 2 2 % .10 0 0℃下器件的最大开关电流比也达到了 3× 10 8.对器件的进一步重复性研究证实了上述结果的可靠性     

Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450°C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500°C. The first formed phase is Ti₅Si₃ in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500°C, the Ti₅Si₄ phase and C49 TiSi₂ phase formed in the regions close to Ti films and Si substrates, respectively.     

铁基非晶合金局部晶化过程中的矫顽力拐折现象

本文研究了铁基非晶合金在局部晶化过程中矫顽力的变化,观察到等温退火时矫顽力的拐折现象,并用析出相粒子由单畴转变为多畴加以说明.计算得到的理论曲线与实验曲线的特征相符.     

FOX-7在DMF/H2O二元体系中的冷却结晶动力学

为解决直接合成所得1,1-二氨基-2,2-二硝基乙烯(FOX-7)存在的晶体形貌不规则,粒度分布不均匀等问题,采用激光动态法和间歇动态法分别测定了FOX-7在N,N-二甲基甲酰胺(DMF)与水(H2O)二元体系(V(DMF)∶V(H2O)=7∶3)中的溶解度和超溶解度及冷却结晶动力学数据,利用最小二乘法拟合得到了晶体成核速率与生长速率方程。结果表明,FOX-7在上述体系中溶解度方程为lnx=16.42-5019.51/T-0.45lnT;在冷却结晶过程中呈粒度无关生长模型;在成核速率与生长速率方程中,过饱和比S的指数分别为0.61与0.45,悬浮密度MT指数的为2.30,搅拌强度ωr的指数为0.22。     

Solid-Phase Microextraction (SPME) of Pyrazines in Model Reaction Systems

Headspace solid-phase microextraction (HS-SPME) combined with gas chromatography (GC) was used for isolating and analysing pyrazines formed in a model system. This system consisted of an aqueous mixture of glucose, glycine and sodium hydroxide. Pyrazine formation was accelerated by heating in a microwave oven. Results were compared with our earlier ones using conventional techniques for isolation of pyrazines. HS-SPME-GC showed several advantages over traditional methods. The method is rapid, sensitive, easy to use and reproducible. Headspace and liquid of the model reaction were extracted and the results obtained using headspace sampling showed good agreement with the methylene chloride extraction method. In all cases, coefficients of variation of 5% or lower were obtained when the SPME extraction time was consistent.     

Oriented Crystallization of Mixed‐Cation Tin Halides for Highly Efficient and Stable Lead‐Free Perovskite Solar Cells

As the most promising lead‐free branch, tin halide perovskites suffer from the severe oxidation from Sn²⁺ to Sn⁴⁺, which results in the unsatisfactory conversion efficiency far from what they deserve. In this work, by facile incorporation of methylammonium bromide in composition engineering, formamidinium and methylammonium mixed cations tin halide perovskite films with ultrahighly oriented crystallization are synthesized with the preferential facet of (001), and that oxidation is suppressed with obviously declined trap density. MA⁺ ions are responsible for that impressive orientation while Br^‐ ions account for their bandgap modulation. Depending on high quality of the optimal MA_0.25FA_0.75SnI_2.75Br_0.25 perovskite films, their device conversion efficiency surges to 9.31% in contrast to 5.02% of the control formamidinium tin triiodide perovskite (FASnI₃) device, along with almost eliminated hysteresis. That also results in the outstanding device stability, maintaining above 80% of the initial efficiency after 300 h of light soaking while the control FASnI₃ device fails within 120 h. This paper definitely paves a facile and effective way to develop high‐efficiency tin halide perovskites solar cells, optoelectronic devices, and beyond.     

Enhanced Performance Consistency in Nanoparticle/TIPS Pentacene‐Based Organic Thin Film Transistors

In this study, inorganic silica nanoparticles are used to manipulate the morphology of 6,13‐bis(triisopropylsilylethynyl)‐pentacene (TIPS pentacene) thin films and the performance of solution‐processed organic thin‐film transistors (OTFTs). This approach is taken to control crystal anisotropy, which is the origin of poor consistency in TIPS pentacene based OTFT devices. Thin film active layers are produced by drop‐casting mixtures of SiO₂ nanoparticles and TIPS pentacene. The resultant drop‐cast films yield improved morphological uniformity at ～10% SiO₂ loading, which also leads to a 3‐fold increase in average mobility and nearly 4 times reduction in the ratio of measured mobility standard deviation (μ_Stdev) to average mobility (μ_Avg). Grazing‐incidence X‐ray diffraction, scanning and transmission electron microscopy as well as polarized optical microscopy are used to investigate the nanoparticle‐mediated TIPS pentacene crystallization. The experimental results suggest that the SiO₂ nanoparticles mostly aggregate at TIPS pentacene grain boundaries, and 10% nanoparticle concentration effectively reduces the undesirable crystal misorientation without considerably compromising TIPS pentacene crystallinity.     

改形苦味酸钾的结晶控制

介绍了苦味酸钾自发结晶习性，论述了改形苦味酸钾的结晶控制，对影响结晶的因素分别进行了分析，通过正交实验设计确定了优化晶形控制工艺条件。     

离子减薄诱发的Zr65Al7.5Ni10Cu17.5块状非晶晶化相的相变

用透射电子显微镜研究了锆基块状非晶合金晶化行为，对分别经双喷电解减薄加离子减薄和单纯双喷电解减薄制备的电镜样品进行观察分析，发现离子减薄会导致该合金晶化亚稳相的转变。