Lignocellullosic materials have been used as low-cost adsorbents for the removal of methylene blue (MB) and malachite green (MG) dyes from aqueous solutions. The organic compounds in the adsorbents that contribute to chemical oxygen demand (COD) have been removed through pretreatment of the adsorbents. The percentage of color removal and COD reduction of both MB and MG dyes were found relatively close in values. The adsorption process followed the Langmuir isotherm as well as the Freundlich isotherm and pseudo-second order kinetic model. The process was found to be endothermic in nature. 相似文献
Siliceous (MCM-41 type) and aluminophosphate (AlPO type) mesoporous materials have been synthesized trying to substitute the largest amount of Si and Al with Mn.
The MnMCM-41 and MnAlPO obtained samples were characterized from the structural viewpoint and successively they underwent electrochemical testing by means of cyclic voltammetries in aqueous electrolytes in order to evaluate the electrochemical activity of the transition metal. In this communication, we report the results obtained from the structural and electrochemical characterization of these samples. The samples show the expected mesoporous structure with hexagonal array. In both systems, Mn is electrochemically active. In MnMCM-41 the two Mn(IV)/Mn(III) and Mn(III)/Mn(II) processes can be detected, while in MnAlPO Mn(III), originally present, shows only the Mn(IV)/Mn(III) reaction. 相似文献
Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon (111) substrates by electrophoresis. The structure, composition, and surface morphology of the formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The measurement results reveal that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminary results suggest that varying the ammoniating temperature has obvious effect on the quality of the GaN films formed with this method. 相似文献