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181.
Based on thermal degradation kinetics and heat transfer expressed as the Ball formula method, a simplified approach was used to optimize sterilization processes for thermal softening of white beans (Phaseolus vulgaris, subsp. nanus Metz., variety Manteca de Leon) Constant retort profiles in a still and end-over-end rotary water cascading retort (Barriquand Steriflow) were used. Quality attributes of beans processed at the optimum were evaluated by a trained taste panel and by a tenderometer. Both approaches could distinguish (P<0.01) between attributes of products from optimal rotary and still processes. End-over-end rotation resulted in faster heat penetration and better quality retention of beans. Texture of white beans processed at 4° or 8°C from the optimal temperature could be distinguished (P<0.01) by the sensory panel and by the tenderometer.  相似文献   
182.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2.  相似文献   
183.
Studies on thermal fatigue in 3Cr2W8V die steel have been carried out by using positron lifetime and microhardness measurements. It is found that the mean positron lifetime and the microhardness exhibit periodic up-and-down variations with an increase in the number of fatigue cycles. The experiments indicate that in the process of thermal fatigue there are two opposing effects on variation of defects: microdeformation and dynamic recovery and recrystallization.  相似文献   
184.
Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 108 times higher than that of a nongradient SiC ceramic.  相似文献   
185.
Thermal diffusivities of supercritical CO2 and C2H6 were determined over a wide density range with a photothermal technique. The thermal lens, formed by the degradation of the absorbed light energy as heat by the sample, allows the employment of a nonequilibrium method in the critical region. Controlling the refractive-index gradient, i.e., a density gradient, perturbations can be maintained at levels where convection is negligible. An easy-to-operate setup allowed us to measure thermal diffusivities in the density ranges 5 to 20 mol·dm–3 for CO2 at 308 and 313 K and 2 to 12 mol·dm–3 for C2H6 at 308 K with a standard precision of 15%.  相似文献   
186.
Thermal stratification in a mantled hot water storage tank is analysed numerically for different water inlet velocities. The aim is to obtain higher thermal stratification and supply hot water for usage as long as possible. Twelve different water inlet velocities to the hot water storage tank are considered. The numerical method is validated by comparing its results against experimental and numerical results from the literature. It turned out that the results obtained from the numerical analysis have shown very good agreements with the results from previous works. As a result, the water temperature in the tank increases with the increase of the water inlet velocities to the mantle but this increment is not proportional. After a period of operation of 7.2 h, which corresponds to the average sunshine duration in Turkey, temperature increments of 6.5 and 35 K have been estimated for the hot water inlet velocities of 0.01 and 0.3 m s?1, respectively, at a radial distance of 0.1 m and a height of 1 m inside the storage tank. Copyright © 2005 John Wiley & Sons, Ltd.  相似文献   
187.
凝土温度特性参数反分析及其应用   总被引:1,自引:0,他引:1  
黎军  朱岳明  何光宇 《红水河》2003,22(2):33-36
建立混凝土温度场材料特性参数反演分析模型,并用有限单元法仿真计算和可变容差法编制了优化反演程序。数值算例表明该算法是稳定的,收敛速度较快,并给出具体的在建工程实例的应用情况。通过现场温度观测值,进行优化反演计算得到混凝土温度的有关特性参数,这将成为部分或全部替代仅靠实验室选取参数的行之有效的途径之一。  相似文献   
188.
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process.  相似文献   
189.
张登玉 《激光杂志》2003,24(4):40-42
超Jaynes一Cummings模型中的两能级原子置于热辐射场。通过求解原子与热辐射场相互作用过程中原子约化密度算符非对角元.精确得出子原子相干性的衰变规律。研究了在相互作用系统中外加驱动场时可保持原子的相干性,此时外加驱动场的时间演化与原子的跃迁频率、原子偶极矩、热库的温度和k模光子频率等因素有关。  相似文献   
190.
新型热红外伪装涂料用填料中空微珠性能研究   总被引:10,自引:0,他引:10  
分析了温度对涂层发射率的影响,并据此重点研究了一种新型热红外伪装涂料用填料——中空微珠——的常规使用性能、降温效果以及对涂层发射率的影响。研究认为,中空微殊用量小于20%、粒径为200目左右时常规使用性能最好。60目的中空微殊降温效果最好,而且当其用量小于20%时,中空微珠对涂层的发射率基本没有影响。  相似文献   
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