二乙基二硫代氨基甲酸钴[(C_5H_(10)NS_2)_3Co(Ⅲ)]的溶剂热合成、晶体结构及电化学性质

溶剂热法合成了二乙基二硫代氨基甲酸钴配合物[(C5H10NS2)3Co(Ⅲ)],并制备了其单晶。用X射线衍射法测定了晶体结构并结合晶体结构对配合物做了电化学研究。该化合物属于单斜晶系,C2/c空间群,晶胞参数a=1.417 1(3)nm,b=1.033 3(4)nm,c=1.711 4(5)nm,z=4,Dc=1.423 g.cm-3,μ=1.268 mm-1,F(000)=1 056,最终结构偏离因子R=0.032 1,ωR=0.086 4,S=1.070。     

Orientation dependence of fracture toughness measured by indentation methods and its relation to surface energy in single crystal silicon

Fracture toughness of silicon crystals has been investigated using indentation methods, and their surface energies have been calculated by molecular dynamics (MD). In order to determine the most preferential fracture plane at room temperature among the crystallographic planes containing the 〈001〉, 〈110〉 and 〈111〉 directions, a conical indenter was forced into (001), (110) and (111) silicon wafers at room temperature. Dominant {110}, {111} and {110} cracks were introduced from the indents on (001), (011) and (111) wafers, respectively. Fracture occurs most easily along {110}, {111} and {110} planes among the crystallographic planes containing the 〈001〉, 〈011〉 and 〈111〉 directions, respectively. A series of surface energies of those planes were calculated by MD to confirm the orientation dependence of fracture toughness. The surface energy of the {110} plane is the minimum of 1.50 Jm⁻² among planes containing the 〈001〉 and 〈111〉 directions, respectively, and that of the {111} plane is the minimum of 1.19 Jm⁻² among the planes containing the 〈011〉 direction. Fracture toughness of those planes was also derived from the calculated surface energies. It was shown that the K _IC value of the {110} crack plane was the minimum among those for the planes containing the 〈001〉 and 〈111〉 directions, respectively, and that K _IC value of the {111} crack plane was the minimum among those for the planes containing the 〈011〉 direction. These results are in good agreement with that obtained conical indentation.     

多晶FeS2薄膜电学性能的研究与进展

FeS2薄膜是极具研究价值的光电转换材料，改善光电转换效率是主要研究方向，而进一步阐明电传导规律和机制是探索改善FeS2薄膜光电转换效率有效途径的前提之一。本文概述了FeS2薄膜电学性能的研究进展，分析了硫化制备工艺及掺杂效应对FeS2薄膜电学性能的影响，介绍了晶界势垒模型、跳跃传导模型及晶体点缺陷理论等FeS2薄膜电传导相关机制，讨论了FeS2薄膜存在的问题及发展方向。     

Effects of Y concentration on luminescence properties of PbWO4 single crystals

The effects of Y³⁺ doping at different concentration on the luminescnece properties of PbWO₄ crystals have been investigated by means of Fourier transform infrared (FT-IR) spectrum, optical transmission, thermoluminescence (TL), X-ray excited luminescence (XEL), photoluminescence (PL) under excitation of UV light and light yield measurements. The series PbWO₄:Y crystal samples were grown by modified Bridgman method and the concentration of Y³⁺ in the melt was in the range of 0–1.0 mol%. The slight blue-shift and evident red-shift of the absorption edge in PbWO₄ crystal were observed at low and heavy doping concentration, respectively. TL peaks in the range of from room temperature to 250 °C disappeared after the doping with Y³⁺. With the increase of doping concentration, the luminescence intensity in the XEL and PL spectra was found to decrease accordingly, especially in the case of heavy doping. The measuring results demonstrate that Y³⁺ doping concentration below 100 ppm in the crystal seems to be the best for optimizing the optical and scintillation properties of the material. The mechanism of Y³⁺ doping concentration influence on luminescence was also discussed in this paper.     

汽液特性在液位控制器中的应用

汽液两相流液位控制器是根据汽、液两相流体的物理特征及动力学原理设计而成的,文中给出了控制器主要部件几何尺寸设计公式,阐述了控制器的调节原理并建立了调节系统的控制方程,通过理论和实验研究,分析了影响调节性能的因素,为改进调节系统的稳定性及实际运行提供指导。实际应用表明,在设备运行工况变化50%时,该控制器仍然能够满足工业生产的实际需要。因其无运动部件,所以使用寿命长,无渗漏、安全可靠,调节能力强,成本低,经济性好,故在汽液共存且需要维持液位的行业中具有广泛的应用前景。     

超导磁体系统产生的磁场作用下的微重力环境

超导磁体系统产生的磁场力可抑制晶体生长过程中的自然对流,从而提高晶体结晶质量。通过理论分析,得到了实现微重力环境所要求的磁场强度分布。针对特定结构的超导磁体系统,数值模拟得到了不同晶体结晶过程中自然对流完全抑止所需要的线圈电流密度,以及工作空间内的磁场强度和磁加速度。以圆筒内水的自然对流为例,分别得到了重力作用下的流场和温度场,以及超导磁体系统微重力区内的流场和温度场。结果表明:通过特定的超导磁体结构和不同电流密度,可实现不同晶体结晶过程的微重力环境,达到抑止自然对流的目的。     

Single crystal growth of one-dimensional GaN nanostructures by halide vapor-phase epitaxy

High-quality one-dimensional GaN rods and nanowires were grown on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffractometery, scanning and transmission electron microscopy, and photoluminescence techniques. A high density of straight and aligned one-dimensional GaN nanowires with a diameter of 80 nm was uniformly formed on the entire substrate at 700^∘C. The X-ray diffraction patterns, transmission electron microscopic images, and selective area electron diffraction patterns indicate that the one-dimensional GaN are nanostructure pure single crystals preferentially oriented in the [001] direction. Photoluminescence analysis revealed that the HVPE grown GaN nanowires have high optical quality.     

脱氮除磷污泥（混合液）回流方法

简要分析了脱氮除磷工艺三种污泥(混合液)回流方法(泵提升法,叶轮搅拌提升法和空气提升法)各自的特点,并认为由于叶轮搅拌提升法和空气提升法便于实现构筑物一体化,可以简化工艺流程,节省基建投资,而且能耗低,操作简单,在拟建的中小规模污水处理厂中具有良好的应用前景。     

Oxidation kinetics and high temperature in-situ observation of the oxidation behaviour of NbSi_2 at 1023 K

Pest oxidation has been known for a long time in refractory transition-metal disilicides such as NbSi2 and MoSi2[1―4]. However, the origin of pesting reaction of these materials is still under debate. Although the pesting phenomenon in NbSi2 has been reported in several works[5―7], a direct study of the mechanism is scarce at the moment. Compared to NbSi2, pesting in MoSi2 has received relatively extensive attention. Mckamey et al.[8] showed fragmentation near 773K occurred easily in as…     

金属间化合物Sm_3(Fe_(1-x)V_x)_(29)的结构及其微观机制研究

利用X射线衍射,金相显微镜,能谱分析以及差示扫描量热(DSC)等手段对金属间化合物Sm3(Fe1-xVx)29(x=0.01,0.03,0.05,0.08,0.1)的结构及其微观机制进行了研究.结果表明,金属间化合物Sm3(Fe1-xVx)29(x=0.01,0.03,0.05,0.08,0.1)的结构均为3:29型结构,并且随V含量增加,金属间化合物Sm3(Fe1-xVx)29的晶格常数和晶胞体积V均呈减少趋势.当x>0.05时,金属间化合物Sm3(Fe1-xVx)29中的杂质相明显呈现出来.随着V含量的增加,居里温度(TC)呈单调上升趋势.