Thermal imaging of time-varying longitudinal defects in the internal coating of a tube

We deal with the mathematical model of the incremental degradation of the internal coating (e.g. a polymeric material) of a metallic pipe in which a fluid flows relatively fast. The fluid drags solid impurities so that longitudinal scratches, inaccessible to any direct inspection procedure, are produced on the coating. Time evolution of this kind of defects can be reconstructed from the knowledge of a sequence of temperature maps of the external surface. The time-varying orthogonal section of this damaged interface is determined as a function of time and polar angle through the identification of a suitable effective heat transfer coefficient by means of Thin Plate Approximation.     

Quantitative investigation of electromechanical coupling of potassium sodium niobate-based thin films

High-performance environment-friendly piezoelectric potassium sodium niobate (KNN)-based thin films have been emerged as promising lead-free candidates, while their substrate-dependent piezoelectricity faces the lack of high-quality information due to restraints in measurements. Although piezoresponse force microscopy (PFM) is a potential measuring tool, still its regular mode is not considered as a reliable characterization method for quantification. After combining machine-learning enabled analysis using PFM datasets, it is possible to measure piezoelectric properties quantitatively. Here we utilized advanced PFM technology empowered by machine learning to measure and compare the piezoelectricity of KNN based thin films on different substrates. The results provide a better understanding of the relationship between structures and piezoelectric properties of the thin films.     

Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

涡轮搅拌桨反应器混合过程的数值计算

利用CFD方法计算单层涡轮反应器搅拌槽内流体混合过程的速度场和浓度场,研究物料在搅拌槽内的混合过程,以及不同监测点对混合时间的影响。结果表明,搅拌槽内物料的混合主要受槽内流体的流动形式所影响;混合时间的长短与监测点位置有关;在搅拌桨的桨叶附近进行监测所得到的混合时间较短,在液面附近进行监测所得的混合时间较长。在实际生产和试验中,应注意对监测点位置的选取。     

新型高K栅介质ZrO2薄膜材料的制备及表征

采用超高真空电子束蒸发法制备了新型高 K栅介质-非晶 ZrO2薄膜. X射线光电子能谱 (XPS) 中 Zr3d5/2 和 Zr3d3/2 对应的结合能分别为 182.1eV和 184.3eV, Zr元素的主要存在形式为 Zr4+,说明薄膜由完全氧化的 ZrO2组成 ,并且纵向分布均一.扩展电阻法( SRP)显示 ZrO2薄膜的 电阻率在 108Ω@ cm以上,通过高分辨率透射电镜( HR- XTEM)可以观察 ZrO2/Si界面陡直,没有 界面反应产物 ,证明 600℃快速退火后 ZrO2薄膜是非晶结构.原子力显微镜( AFM)表征了薄膜的 表面粗糙度,所有样品表面都很平整,其中 600℃快速退火样品 (RTA)的 RMS为 0.480nm.     

PECVD法低温沉积多晶硅薄膜的研究

在玻璃衬底上采用常规的PKCVD法在低温(≤400℃)条件下制得大颗较(直径＞100nm)、择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiF4和H2混合气体。加入少量的SiH4后，沉积速率提高了近10倍。分析认为，在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m n≤3)，而不可能是SiHn(n≤3)基团。     

烟气轮机叶片应力分析与寿命评估方法评述

烟气轮机是炼油厂催化裂化装置的关键设备,合理预测叶片疲劳寿命是保障烟机安全运行的有效手段。从力学建模和边界条件两个方面简要阐述了叶片的应力分析方法,并系统分析了影响烟机叶片疲劳寿命的主要因素,提出了利用改进的局部应力应变法进行叶片寿命预测的合理性和叶片疲劳寿命的评估方法。