Evidence for the Band‐Edge Exciton of CuInS2 Nanocrystals Enables Record Efficient Large‐Area Luminescent Solar Concentrators

Ternary I‐III‐VI₂ nanocrystals (NCs), such as CuInS₂, are receiving attention as heavy‐metals‐free materials for solar cells, luminescent solar concentrators (LSCs), LEDs, and bio‐imaging. The origin of the optical properties of CuInS₂ NCs are however not fully understood. A recent theoretical model suggests that their characteristic Stokes‐shifted and long‐lived luminescence arises from the structure of the valence band (VB) and predicts distinctive optical behaviours in defect‐free NCs: the quadratic dependence of the radiative decay rate and the Stokes shift on the NC radius. If confirmed, this would have crucial implications for LSCs as the solar spectral coverage ensured by low‐bandgap NCs would be accompanied by increased re‐absorption losses. Here, by studying stoichiometric CuInS₂ NCs, it is revealed for the first time the spectroscopic signatures predicted for the free band‐edge exciton, thus supporting the VB‐structure model. At very low temperatures, the NCs also show dark‐state emission likely originating from enhanced electron‐hole spin interaction. The impact of the observed optical behaviours on LSCs is evaluated by Monte Carlo ray‐tracing simulations. Based on the emerging device design guidelines, optical‐grade large‐area (30×30 cm²) LSCs with optical power efficiency (OPE) as high as 6.8% are fabricated, corresponding to the highest value reported to date for large‐area devices.     

利用太阳辐射测量合肥地区气溶胶光学厚度

2005年11月至2006年1月,选择晴朗无云的天气,利用地物光谱仪和自行设计的基于积分球的光学接收装置,测量了合肥地区的太阳直射光谱。利用Langley方法对测量的数据进行处理,反演了从350nm到2500nm的大气气溶胶光学厚度,550nm处的光学厚度平均值是0．39156,光学厚度随波长增加而减小;对计算得出的光学厚度值作了Junge分布拟合,得到浑浊度系数k的平均值是0．18895,波长指数v的平均值是3．26504,结果表明合肥地区气溶胶中小粒子占主导地位。     

太阳能电池与反射阵天线的一体化集成设计

提出了一种与太阳能电池板集成的反射阵天线。用太阳能片底部金属层作为反射阵单元的辐射贴片,使得照射在太阳能电池上的光照不受天线遮挡,实现了最大化的光电转化效率。反射阵单元尺寸为0.4λ₀×0.4λ₀。单元相移范围达到543°。用该单元组成了单元数为15×15的反射阵列天线,阵面口径大小为690 mm×690 mm(6λ₀×6λ₀)。采用标准增益喇叭天线作为反射阵馈源。仿真结果表明,在2.6 GHz反射阵的增益达到22.5 dBi,口径效率为39.5%。     

飞秒激光刻蚀增强非晶硅薄膜太阳电池性能的研究

通过恒速移动线偏振飞秒激光焦点对非晶硅(a-Si) pin型薄膜太阳电池n型硅膜表面进行绒化刻蚀处理,形成不同周期间隔“凹槽”状结构.采用扫描电子显微镜(SEM)和X射线衍射仪(XRD)对刻蚀后薄膜表面形貌进行了表征,证实了刻蚀区域表面能够诱导晶态多孔微结构形成.比较了飞秒激光刻蚀前后a-Si太阳电池的光电转换效率(η)、开路电压、短路电流密度和填充因子.结果表明,当飞秒激光脉冲能量为0.75 J/cm2、刻蚀周期间隔为15μm时,太阳电池光电转换效率达到14.9％,是未经过激光刻蚀处理电池光电转换效率的1.87倍.同时,反射吸收谱表明,电池表面多孔“光俘获”微结构的形成对其光电转换效率的提高起到了关键作用.     

n型单晶硅片的电阻率和扩散方阻对IBC太阳电池电性能的影响

叉指背接触式(IBC)太阳电池因正面没有金属栅线遮挡,具有较高的短路电流,且组件外观更加美观。但由于IBC太阳电池正负电极在背面交叉式分布,在制备过程中需要采用光刻掩模技术进行隔离,难以实现大规模生产。采用Quokka软件仿真模拟了电阻率和扩散方阻对n型IBC太阳电池效率的影响,并对不同电阻率和扩散方阻的电池片进行了实验验证,从n型单晶硅片电阻率的选择和扩散工艺优化方面为IBC太阳电池的规模化生产提供了理论基础。实验结果表明,电阻率为3~5Ω·cm、扩散方阻为70Ω/时,小批量生产的IBC太阳电池平均光电转换效率可达23.73%,开路电压为693 mV,短路电流密度为42.44 mA/cm²,填充因子为80.69%。     

近空间升华沉积CdTe薄膜的微结构和PL谱

用近空间升华法在CdS薄膜上沉积了CdTe薄膜.研究了在两种保护气氛下所沉积的多晶CdTe薄膜在后处理后的微结构、表面形貌及光致发光(PL)谱,并研究了CdTe表面和CdS/CdTe界面的PL谱的区别,根据薄膜的微结构对碲化镉在太阳电池中的应用进行了讨论.     

Analytic computation of the photocurrent density in a n-6H-SiC/p-Si/n-Si/p-Si0.8Ge0.2 multilayer solar cell

In this work we conceived a model of a multilayer solar cell composed by four layers of opposite conductivities: an n-type 6H-SiC used as a frontal layer to absorb high energy photons (energy gap equals 2.9 eV), a p-type Si layer, an n-type Si layer and a p-type SiGe back layer to absorb low energy photons (Si_0.8Ge_0.2 with an energy gap equal to 0.8 eV). The impurity concentration in every layer of the model is taken equal to 10¹⁷ cm⁻³ to ensure abrupt junctions inside the cell. The optical properties of the separate layers have been fitted and tabulated to be used for thin films devices numerical simulation. We developed the equations giving the minority carrier concentration and the photocurrent density in each abscissa of the model. We used Matlab software to simulate and optimize the layers thicknesses to achieve the maximum photocurrent generated under AM0 solar spectrum. The results of simulation showed that the optimized structure could deliver, assuming 10⁵ cm/s surface recombination velocity, a photocurrent density of more than 53 mA/cm², which represents 88.3% of the ideal photocurrent (59.99 mA/cm²) that can be generated under AM0 solar spectrum.     

Tuning the Dimensions of C60‐Based Needlelike Crystals in Blended Thin Films

A new ordered structure of the C₆₀ derivative PCBM ([6‐6]‐phenyl C₆₁‐butyric acid methyl ester) is obtained in thin films based on the blend PCBM:regioregular P3HT (poly(3‐hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures of a few micrometers up to 100 μm in size is demonstrated by submitting the blended thin films to an appropriate thermal treatment. These structures can grow out to a 2D network of PCBM needles and, in specific cases, to spectacular PCBM fans. Key parameters to tune the dimensions and spatial distribution of the PCBM needles are blend ratio and annealing conditions. The as‐obtained blended films and crystals are probed using atomic force microscopy, transmission electron microscopy, selected area electron diffraction, optical microscopy, and confocal fluorescence microscopy. Based on the analytical results, the growth mechanism of the PCBM structures within the film is described in terms of diffusion of PCBM towards the PCBM crystals, leaving highly crystalline P3HT behind in the surrounding matrix.     

Efficient silicon heterojunction solar cells based on p‐ and n‐type substrates processed at temperatures < 220°C

We present the optimization and characterization of heterojunction solar cells consisting of an amorphous silicon emitter, a single crystalline absorber and an amorphous silicon rear side which causes the formation of a back surface field (a‐Si:H/c‐Si/a‐Si:H). The solar cells were processed at temperatures <220°C. An optimum of the gas phase doping concentration of the a‐Si:H layers was found. For high gas phase doping concentrations, recombination via defects located at or nearby the interface leads to a decrease in solar cell efficiency. We achieved efficiencies >17% on p‐type c‐Si absorbers and >17·5% on n‐type absorbers. In contrast to the approach of Sanyo, no additional intrinsic a‐Si:H layers between the substrate and the doped a‐Si:H layers were inserted. Copyright © 2006 John Wiley & Sons, Ltd.     

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

We present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including directionally‐solidified ingot‐grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal‐rich particles are assessed by synchrotron‐based analytical x‐ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal‐rich particles can be observed (metal silicide nanoprecipitates and metal‐rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc‐Si materials can largely be explained by variations in crystal growth parameters, structural defect types, and contamination sources. Copyright © 2006 John Wiley & Sons, Ltd.