相转移法制备高纯超细TiO2技术研究

报道了用相转移法制备高纯超细ＴｉＯ２的新技术；探讨了Ｔｉ（Ⅳ）从有机相转移到水相发生水解反应的机理 ；通过ＴＧ－ＤＴＡ分析以及ＸＲＤ物相分析对水解产物的组成、热分解机理，晶型转变规律进行了研究，建立了水解产物焙烧的最佳温度。     

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.     

车用铸态Ti-5.5Al合金热压缩变形行为研究

用铸态Ti-5.5Al-3.0Nb-3.0Zr-1.2Mo合金为基材,在Gleeble-3800D热模拟测试机上高温压缩测试,变形温度为750~900℃,变形速率为0.001~1 s^-1,总变形比例为75%。结果表明:应变提高,铸态合金加工硬化明显,流变应力呈直线增大;到达峰值应力后,组织开始软化,在软化与硬化过程达动态平衡时,获得稳定流变。处于低变形温度下,动态软化受应变率影响最明显,合金软化受变形温度与应变率共同作用。升温至850℃,存在动态再结晶现象,表现为动态回复。以较低应变率变形时,促进动态再结晶的快速完成,α相可促进动态再结晶转变。提高应变率后,合金中的β相软化机制由动态再结晶转变成局部塑性流变。     

Evolution of grain structure in thin film reactions

In this paper, we examine, both experimentally and theoretically, the kinetics of formation and microstructure of product phases in thin film reactions, using the Nb/Al and Ti/Al systems as our prototypes. The results of calorimetry and microscopy studies are interpreted using simple kinetic and morphology models. In particular, the kinetic models employed here focus on the nucleation and growth components of the phase formation process and the morphology models provide a starting point for the classification of product grain structures. An erratum to this article is available at .     

电解铜箔中异常粒子成长的解析

研究了电解铜箔制造时旨在防止缺陷的镀铜层上发生的异常粒子成长。在Ti基板上形成镀铜层,应用配备有能量耗散x一线分光计的电子扫描显微镜（SEM-EDX）和x一线衍射观察异常粒子析出。异常粒子的发生取决于Ti基材预处理方法。预处理加工时机械抛光发生的Ti粒子与异常粒子成长有关。Ti粒子附近的铜的取向不同于其它部分的镀层。因此Ti粒子与异常粒子成长有关。     

激光沉积修复TA15钛合金热应力的数值模拟

根据激光沉积修复的热传导特点, 利用有限元法中的生死单元技术, 建立了激光沉积修复TA15钛合金的过程模型, 采用参数化设计语言编程实现对多道多层激光沉积修复过程三维热应力场的数值模拟。研究了不同功率、不同扫描速度下以及对修复基体预热后热应力的动态分布规律, 并对热应力变化的原因进行了分析。结果表明, 随着激光功率的减小、扫描速度的增大热应力呈减小趋势, 对修复基体预先加热, 可以有效调控热应力的产生和演化, 为降低激光沉积修复过程中的热应力, 提高修复质量提供理论依据。     

Novel Diffusion‐Barrier Materials Against Oxygen for High‐Density Dynamic Random Access Memory Capacitors

A new design concept for diffusion barriers in high‐density memory capacitors is suggested, and both RuTiN (RTN) and RuTiO (RTO) films are proposed as sacrificial oxygen diffusion barriers. The newly developed RTN and RTO barriers show a much lower sheet resistance than various other barriers, including binary and ternary nitrides (reported by others), up to 800 °C, without a large increase in the resistance. For both the Pt/RTN/TiSi_x/n⁺⁺poly‐plug/n⁺ channel layer/Si and the Pt/RTO/RTN/TiSi_x/n⁺⁺poly‐plug/n⁺ channel layer/Si contact structures, contact resistance—the most important electrical parameter for the diffusion barrier in the bottom electrode structure of capacitors—was found to be as low as 5 kohm, even after annealing up to 750 °C. When the RTN film was inserted as a glue layer between the bottom Pt electrode layer and the TiN barrier film in the chemical vapor deposited (Ba,Sr)TiO₃ (CVD–BST) simple stack‐type structure, the RTN glue layer was observed to be thermally stable to temperatures 150 °C higher than that to which the TiN glue layer is stable. Moreover, the capacitance of the physical vapor deposited (PVD)–BST simple stack‐type structure adopted TiN glue layer initially degraded after annealing at 500 °C, and, thereafter, completely failed. In the case of the RTN and RTO/RTN glue layers, however, the capacitance continuously increased up to 550 °C. Thus, the new RTN and RTO films, which act as diffusion barriers to oxygen, are very promising materials for achieving high‐density capacitors.     

TC4合金激光熔覆WC-12Co涂层

利用扫描电镜和能谱仪对TC4合金表面激光熔覆WC-12Co熔覆区的组织和成分进行了研究。结果表明,熔覆层组织为多边形的大颗粒WC和其间分布的细小的树枝晶。TC4合金表面激光熔覆WC-12Co可以实现涂层与基体之间良好的冶金结合,激光熔覆层的最高硬度达1200HV。     

SiCp/6061Al金属基复合材料焊缝“原位”

以Ti作为合金化元素对SiCp/6061Al金属基复合材料(SiCp/6061AlMMC)进行焊缝“原位”合金化激光焊接。研究了焊缝“原位”合金化元素Ti添加量对焊缝显微组织的影响。结果表明,采用焊缝“原位”合金化方法激光焊接SiCp/6061AlMMC,可以有效抑制焊缝中针状脆性相Al4C3的形成,并获得以均匀分布TiC,Ti5Si3等为增强相的新型金属基复合材料焊缝,焊缝“原位”合金化激光焊接是焊接SiCp/Al复合材料的一种新方法。     

钛基复合材料的离子抛光工艺适用性研究

金属基复合材料的制样难点在于基体和增强相物理性能差异大,采用机械-化学抛光、电解抛光等传统方法制样效率较低.离子抛光的制样优势在于可通过程序控制,实现对复合材料的整体加工,减小界面浮凸,从而提高制样效率.作者在前期研究中得到了最佳离子抛光工艺参数,将此系列参数应用于不同增强相含量钛基复合材料的扫描电镜制样中,对比观察微...